Hasunuma Ryu
- Articles
- Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics
GOTO Masakazu; HIGUCHI Keiichi; TORII Kazuyoshi; HASUNUMA...
Japanese Journal of Applied Physics. Pt. 1, Regular Papers, Short Notes & Review Papers/43(11)/pp.7826-7830, 2004-11 - Conducting-AFM Spectroscopy on Ultrathin SiO2 Films
Atsushi Ando; Kazushi Miki; Ryu Hasunuma; and Yasushiro ...
Applied Physics/A(72)/p.S223-S226, 2001-01 - Conducting Atomic Force Microscopy Studies on Local Electrical Properties of Ultrathin SiO2 Films
Atsushi Ando; Ryu Hasunuma; Tatsuhiro Maeda; Kunihiro Sa...
Applied Surface Science/(162-163)/p.401-405, 2000-01 - Analysis on Electrical Properties of Ultrathin-SiO2/Si(111) Interfaces with an Atomic Force Microscope
Ryu Hasunuma; Atsushi Ando; Kazushi Miki; and Yasushiro ...
Applied Surface Science/(162-163)/p.547-552, 2000-01 - Analysis on Interface States of Ultrathin-SiO2/Si(111)
Ryu Hasunuma; Atsushi Ando; Kazushi Miki; Yasushiro Nish...
Applied Surface Science/(159-160)/p.83-88, 2000-01 - Interface States of SiO2/Si(111) Observed by an Atomic Force Microscope
Ryu Hasunuma; Atsushi Ando; Kazushi Miki; and Yasushiro ...
Surface Science Letter/(443)/p.L1055-L1058, 1999-01 - Current Transport through a Single Si Atom Junction on Si(111)-7x7 Surfaces
Ryu Hasunuma; Hiroshi Tokumoto
Surface Science/(433-435)/p.17-21, 1999-01 - Chemically-assisted desorption of hydrogen atoms on hydrogen-terminated Si surface
Yukinori Morita; Ryu Hasunuma; and Hiroshi Tokumoto
Proc. 9th International Conference on Production Engineering :Precision Science and Technology for Perfect Surfaces/(693), 1999-01 - Electric Properties of Nanoscale Contacts on Si(111) Surfaces
Ryu Hasunuma; Tadahiro Komeda; and Hiroshi Tokumoto
Applied Surface Science/(130-132)/p.84-89, 1998-01 - Atomic Manipulation and Atomic Scale Experiment on Si(111) Surface with STM
Hiroshi Tokumoto; Ryu Hasunuma
Journal of Surface Analysis/(4)/p.148-151, 1998-01 - Indentation Effect on Atom Manipulation on Si(111) Surfaces Investigated by STM
Ryu Hasunuma; Tadahiro Komeda; and Hiroshi Tokumoto
Applied Physics/A(66)/p.S689-S693, 1998-01 - Layer-by-layer Atomic Manipulation on Si(111)-7×7 Surface: Surface Structures and Staircase Conductance Variation with Atom Removal
Tadahiro Komeda; Ryu Hasunuma; Hiromi Mukaida; and Hiros...
Surface Science/(386)/p.149-153, 1997-01 - Nanoscale Indentation on Si(111) Surfaces with Scanning Tunneling Microscope
Ryu Hasunuma; Tadahiro Komeda; and Hiroshi Tokumoto
Japanese Journal of Applied Physics/(36)/p.3827-3833, 1997-01 - Formation of Si Nanowire by Atomic Manipulation with a High Temperature Scanning Tunneling Microscope
Ryu Hasunuma; Tadahiro Komeda; Hiromi Mukaida; and Hiros...
Journal of Vacuum Science and Technology/B(15)/p.1437-1441, 1997-01 - Atom Manipulation on Si(111)-7x7 Surface by Contact Formation of Biased Scanning Tunneling Microscope Tip: Surface Structure and Tip Current Variation with Atom Removal
Ryu Hasunuma; Tadahiro Komeda; Hiromi Mukaida; and Hiros...
Journal of Vacuum Science and Technology/A(15)/p.1482-1487, 1997-01 - Layer-by-layer Atomic Manipulation on Si(111)-7x7 Surface
Tadahiro Komeda; Ryu Hasunuma; and Hiroshi Tokumoto
Applied Physics Letter/(68)/p.3482-3484, 1996-01 - Changes in Transition Temperature of the Si(111)1x1-7x7 Phase Transition Observed under Various Oxygen Environments
Katsuyuki Tsukui; Kazuhiko Endo; Ryu Hasunuma; Osamu Hir...
Surface Science Letter/(328)/p.L553-L560, 1995-01 - Treatment of the Wall Materials of Extremely High Vacuum Chamber for Dynamical Surface Analysis.
Katsuyuki Tsukui; Ryu Hasunuma; Kazuhiko Endo; Toshiaki ...
Journal of Vacuum Science and Technology/A(11)/p.417-421, 1993-01 - Extremely High Vacuum System for Dynamical Surface Analysis
Katsuyuki Tsukui; Kazuhiko Endo; Ryu Hasunuma; Toshiaki ...
Journal of Vacuum Science and Technology/A(11)/p.2655-2658, 1993-01
- Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics