梅田 享英(ウメダ タカヒデ)
- 論文
- Microscopic origins of dry-etching damages in silicon large-scaled integrated circuits revealed by electrically detected magnetic resonance
K. Uejima; T. Umeda
APPLIED PHYSICS LETTERS/104(8)/p.082111, 2014-02 - Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO2 Interfaces
T. Umeda; R. Kosugi; K. Fukuda; N. Morishita; T. Oshima; ...
Materials Science Forum/717-720/p.427-432, 2012 - Polymorphism of carbon forms: Polyhedral morphology and electronic structures
M. Fujita; T. Umeda; M. Yoshida
Physical Review B/51(19)/p.13778-13780, 1995-05 - Electronic structure of band-tail electrons in a-Si:H
T. Umeda; S. Yamasaki; A. Matsuda; J. Isoya; K. Tanaka
Physical Review Letters/77(22)/p.4600-4603, 1996-11 - Spatial distribution of phosphorus atoms surrounding spin centers of P-doped hydrogenated amorphous silicon elucidated by pulsed ESR
S. Yamasaki; J.-K. Lee; T. Umeda; J. Isoya; K. Tanaka
Journal of Non-crystalline Solids/198-200/p.330-333, 1996-01 - Insitu electron-spin- resonance measurements of film growth of hydrogenated amorphous silicon
S. Yamasaki; T. Umeda; J. Isoya; K. Tanaka
Applied Physics Letters/70(9)/p.1137-1139, 1997-03 - Control of crystallinity of microcrystalline silicon film grown on insulating glass substrates
J.-H. Zhou; K. Ikuda; T. Yasuda; T. Umeda; S. Yamasaki; K...
Journal of Non-crystalline Solids/227-230/p.857-860, 1998-01 - Energy location of light-induced ESR centers in undoped a-Si:H
T. Umeda; S. Yamasaki; A. Matsuda; J. Isoya; K. Tanaka
Journal of Non-crystalline Solids/227-230/p.353-357, 1998-01 - Microscopic nature of localized states in a-Si:H and their role in metastability
S. Yamasaki; T. Umeda; J. Isoya; J.H. Zhou; K. Tanaka
Journal of Non-crystalline Solids/227-230/p.332-337, 1998-01 - Existence of surface region with high dangling bond density during a-Si:H film growth
S. Yamasaki; T. Umeda; J. Isoya; K. Tanaka
Journal of Non-crystalline Solids/227-230/p.83-87, 1998-01 - Electron spin resonance center of Dangling bonds in undoped a-Si:H
T. Umeda; S. Yamasaki; J. Isoya; K. Tanaka
Physical Review B/59(7)/p.4849-4857, 1999-02 - Microscopic origin of light-induced ESR centers in undoped a-Si:H
T. Umeda; S. Yamasaki; J. Isoya; K. Tanaka
Physical Review B/62(23)/p.15702-15710, 2000-12 - In situ electron spin resonance of initial oxidation processes of Si surfaces
T. Umeda; S. Yamasaki; M. Nishizawa; T. Yasuda; K. Tanaka
Applied Surface Science/162-163/p.299-302, 2000-01 - Defects related to DRAM leakage current studied by electrically detected magnetic resonance
T. Umeda; Y. Mochizuki; K. Okonogi; K. Hamada
Physica B/308-310/p.1169-1172, 2001-01 - Charge-trapping defects cat-CVD silicon nitride films
T. Umeda; Y. Mochizuki; Y. Miyoshi; Y. Nashimoto
Thin Solid Films/395/p.266-269, 2001-01 - Electron spin resonance observation of the Si(111)-(7×7) surface and its oxidation process
T. Umeda; M. Nishizawa; T. Yasuda; J. Isoya; S. Yamasaki...
Physical Review Letters/86(6)/p.1054-1057, 2001-01 - In situ ESR observation of interface dangling bond formation processes during amorphous SiO_2_ growth on Si
W. Futako; T. Umeda; M. Nishizawa; T. Yasuda; J. Isoya; S...
Journal of Non-crystalline Solids/299-302/p.575, 2002-01 - Ellectrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits
T. Umeda; Y. Mochizuki; K. Okonogi; K. Hamada
Journal of Applied Physics/94(11)/p.7105-7111, 2003-12 - EPR and pulsed ENDOR study of EI6 and related defects in 4H-SiC
T. Umeda; Y. Ishitsuka; J. Isoya; N. Morishita; T. Ohshima; T....
Materials Science Forum/457-460(465)/pp.465-468, 2004-01 - Improvement of Data Retention Time Property by Reducing Vacancy-Type Point Defect in DRAM Cell Transistor
K. Okonogi; K. Ohyu; T. Umeda; H. Miyake; S. Fujieda
Proceedings International Reliability Physics Symposium 2006/2005/p.695, 2005-03 - Quantitative identification for the physical origin of variable retention time: a vacancy-oxygen complex defect model
K. Ohyu; T. Umeda; K. Okonogi; S. Tsukada; M. Hidaka; S. ...
Technical Digest International Electron Device Meeting (IEDM) 2006/2006/p.389, 2006-12 - A web-based database system for EPR centers in semiconductors
T. Umeda; S. Hagiwara; M. Katagiri; N. Mizuochi; J. Isoya
Physica B/376-377/p.249-252, 2006-01 - Shallow phosphorous donors in 3C-, 4H-, and 6H-SiC , Proceedings of ICSCRM2005 (Sep. 17-23, 2005, Pittsburgh, USA)
J. Isoya; M. Katagiri; T. Umeda; N.T. Son; A. Henry; E. Janzen...
Materials Science Forum/527-529/p.593-596, 2006-01 - Deep acceptor level of the carbon vacancy-carbon antisite pairs in 4H-SiC
P. Carlsson; N.T. Son; T. Umeda; J. Isoya; E. Janzen
Material Science Forum/556-557/p.449-452, 2007-01 - EPR identification of defects and impurities in SiC: To be decisive
J. Isoya; T. Umeda; N. Mizuochi; N.T. Son; E. Janzen; T. Ohshima
Material Science Forum/600-603(Part 1-2)/pp.279-284, 2009-01 - さらに表示...
- Microscopic origins of dry-etching damages in silicon large-scaled integrated circuits revealed by electrically detected magnetic resonance