梅田 享英(ウメダ タカヒデ)

研究者情報全体を表示

論文

• Shallow phosphorous donors in 3C-, 4H-, and 6H-SiC , Proceedings of ICSCRM2005 (Sep. 17-23, 2005, Pittsburgh, USA)
  J. Isoya; M. Katagiri; T. Umeda; N.T. Son; A. Henry; E. Janzen...
  Materials Science Forum/527-529/p.593-596, 2006-01
• Deep acceptor level of the carbon vacancy-carbon antisite pairs in 4H-SiC
  P. Carlsson; N.T. Son; T. Umeda; J. Isoya; E. Janzen
  Material Science Forum/556-557/p.449-452, 2007-01
• EPR identification of defects and impurities in SiC: To be decisive
  J. Isoya; T. Umeda; N. Mizuochi; N.T. Son; E. Janzen; T. Ohshima
  Material Science Forum/600-603(Part 1-2)/pp.279-284, 2009-01
• Photo-EPR study of vacancy-type defects in irradiated n-type 4H-SiC
  T. Umeda; N. Morishita; T. Ohshima; H. Itoh; J. Isoya
  Material Science Forum/600-603(Part 1-2)/pp.409-412, 2009-01
• Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interafce trap density
  R. Kosugi; T. Umeda; Y. Sakuma
  Applied Physics Letters/99(18)/p.182111, 2011-10
• Hybrid quantum circuit with a superconducting qubit coupled to a spin ensemble
  Y. Kubo; C. Grezes; A. Dewes; T. Umeda; J. Isoya; H. Sum...
  Physical Review Letters/107(22)/p.220501, 2011-11
• 22pGQ-12 イオン照射によるダイヤモンド結晶中の窒素空孔センターの生成(22pGQ 格子欠陥・ナノ構造(半導体・誘電体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
  山本 卓; 小野田 忍; 大島 武; Naydenov Boris; Dolde Florian; Fedder ...
  日本物理学会講演概要集/66(2)/p.994, 2011-08
  
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• Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance
  Umeda T.; Esaki K.; Kosugi R.; Fukuda K.; Ohshima T.; Mor...
  APPLIED PHYSICS LETTERS/99(14), 2011-10
• 28aXT-10 SiC中のドナー・アクセプターの位相緩和(格子欠陥・ナノ構造)(領域10)
  磯谷 順一; 野澤 秀彰; 梅田 享英; 大島 武; 森下 憲雄; 神谷 富裕
  日本物理学会講演概要集/59(1)/p.962, 2004-03
  
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• 先端DRAMにおけるデータ保持時間の変動現象のメカニズム : 単一点欠陥が引き起こすデバイス劣化現象
  梅田 享英
  應用物理/76(9)/pp.1037-1040, 2007-09
  
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• 特定分野の学術論文をピンポイントで抽出し，いかに検索するか？ Defect dat@baseの実践例
  梅田 享英; 萩原 茂; 水落 憲和; 磯谷 順一
  情報管理/51(9)/pp.653-666, 2008-01
  
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• Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC
  Umeda T.; Isoya J.; Ohshima T.; Morishita N.; Itoh H.; Gali A.
  PHYSICAL REVIEW B/75(24)/pp.0-0, 2007-06
• EPR identification of intrinsic defects in SiC
  Isoya J.; Umeda T.; Mizuochi N.; Son N. T.; Janzen E.; Oh...
  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS/245(7)/pp.1298-1314, 2008-07
• Dicarbon antisite defect in n-type 4H-SiC
  Umeda T.; Isoya J.; Morishita N.; Ohshima T.; Janzen E.; ...
  PHYSICAL REVIEW B/79(11)/pp.115211-0, 2009-03
• Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance
  Umeda T.; Isoya J.; Ohshima T.; Onoda S.; Morishita N.; O...
  APPLIED PHYSICS LETTERS/97(4)/pp.0-0, 2010-07
• EPR identification of two types of carbon vacancies in 4H-SiC
  Umeda T; Isoya J; Morishita N; Ohshima T; Kamiya T
  PHYSICAL REVIEW B/69(12)/pp.0-0, 2004-03
• EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC
  Umeda T; Isoya J; Morishita N; Ohshima T; Kamiya T; Gali ...
  PHYSICAL REVIEW B/70(23)/pp.0-0, 2004-12
• EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC
  Umeda T; Ishitsuka Y; Isoya J; Son NT; Janzen E; Morishit...
  PHYSICAL REVIEW B/71(19)/pp.0-0, 2005-05
• Spin multiplicity and charge state of a silicon vacancy (T-V2a) in 4H-SiC determined by pulsed ENDOR
  Mizuochi N; Yamasaki S; Takizawa H; Morishita N; Ohshima ...
  PHYSICAL REVIEW B/72(23)/pp.0-0, 2005-12
• Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC
  Son NT; Henry A; Isoya J; Katagiri M; Umeda T; Gali A; Ja...
  PHYSICAL REVIEW B/73(7)/pp.0-0, 2006-02
• Divacancy in 4H-SiC
  Son NT; Carlsson P; ul Hassan; Janzen E; Umeda T; Isoya ...
  PHYSICAL REVIEW LETTERS/96(5)/pp.0-0, 2006-02
• Identification of the carbon antisite-vacancy pair in 4H-SiC
  Umeda T; Son NT; Isoya J; Janzen E; Ohshima T; Morishita ...
  PHYSICAL REVIEW LETTERS/96(14)/pp.0-0, 2006-04
• Pulsed EPR studies of phosphorus shallow donors in diamond and SiC
  Isoya J; Katagiri M; Umeda T; Koizumi S; Kanda H; Son NT; Henry...
  PHYSICA B-CONDENSED MATTER/376/pp.358-361, 2006-04
• Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories
  Umeda T.; Okonogi K.; Ohyu K.; Tsukada S.; Hamada K.; Fuj...
  APPLIED PHYSICS LETTERS/88(25)/pp.0-0, 2006-06