蓮沼 隆(ハスヌマ リユウ)
- 会議発表等
- 2-D Roughening of SiO2 Thermally Grown on Atomically Flat Si Surface
Yamabe K.; Ohsawa K.; Hayashi Y.; Hasunuma R.
Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting - Suppression of Leakage Current of Deposited SiO2 with Bandgap Increasing by High Temperature Annealing
Sometani M.; Hasunuma R.; Ogino M.; Kuribayashi H.; Sugah...
Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting - Characterization of Threshold Voltage Shift by Negative Bias Temperature Stress in HfSiOx Films
Tamura Chihiro; Hayashia Tomohiro; Kikuchi Yuuki; Ohmori ...
Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics held at the 215th ECS Meeting - Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application
Hasunuma Ryu; Tamura Chihiro; Nomura Tsuyoshi; Kikuchi Y...
IEEE International Electron Devices Meeting (IEDM 2009) - Nommiformity in ultrathin SiO2 on Si(111) characterized by conductive atomic force microscopy
Hasunuma R; Okamoto J; Tokuda N; Yamabe K
International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4) - Transient capacitance in metal-oxide-semiconductor structures with stacked gate dielectrics
Goto M; Higuchi K; Torii K; Hasunuma R; Yamabe K
International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4)
- 2-D Roughening of SiO2 Thermally Grown on Atomically Flat Si Surface