Oigawa Haruhiro

Affiliation

Faculty of Pure and Applied Sciences

Official title

Assistant Professor

Research fields

Thin film/Surface and interfacial physical properties

Applied materials

Electron device/Electronic equipment

Research keywords

Surface Science

Epitaxial Growth

Electronic Device

Research projects

Nitride Semiconductor Surface	1998 -- 1998		/国内共同研究
Study on Surface Treatment of Compound Semiconductors	1990 -- (current)		/Grant-in-Aid for Scientific Research
Epitaxial Growth on Sulfur-Treated Surface	1992 -- (current)		/Grant-in-Aid for Scientific Research
Reconstruction of GaAs Surface induced by Submonolayer Dopant Deposition	1997 -- (current)		/Grant-in-Aid for Scientific Research

Academic societies

-- (current)

The Japan Society of Applied Physics

Honors & Awards

1998

日本表面科学会 論文賞

Articles

• Development of laser-combined scanning multiprobe spectroscopy and application to analysis of WSe2/MoSe2 in-plane heterostructure
  Mogi Hiroyuki; Wang Zi-Han; Banba Takafumi; Takaguchi Yuh...
  Appl. Phys. Express/12(4)/p.045002, 2019-03
• Probing spin dynamics by time-resolved STM
  Shoji Yoshida; Osamu Takeuchi; Haruhiro Oigawa; Hidemi Sh...
  Solid state physics/53(4)/p.165, 2018-04
• Optical pump-probe STM
  Shigekawa Hidemi; Shoji Yoshida; Osamu Takeuchi; Haruhiro...
  J. Electron Microsc. (Kenbikyo)/52(1)/p.46, 2017-02
• Probing ultrafast spin dynamics with optical pump-probe scanning tunnelling microscopy
  Shoji Yoshida; Yuta Aizawa; Zi-han Wang; Ryuji Oshima; Yu...
  Nature Nanotechnology/9(8)/pp.588-593, 2014-08
• Principles and Application of Heterodyne Scanning Tunnelling Spectroscopy
  Eiji Matsuyama; Takahiro Kondo; Haruhiro Oigawa; Donghui ...
  Scientific Reports/4, 2014-10
  PubMed
• Bases for Time-Resolved Probing of Transient Carrier Dynamics by Optical Pump-Probe Scanning Tunneling Microscopy
  Yokota Munenori; Yoshida Shoji; Mera Yutaka; Takeuchi Osa...
  NANOSCALE/5(19)/pp.9170-9175, 2013-07
  Tsukuba Repository
• Optical pump-probe scanning tunneling microscopy for probing ultrafast dynamics on the nanoscale
  Yoshida Shoji; Terada Yasuhiko; Yokota Munenori; Takeuchi...
  The European Physical Journal Special Topics/222(5)/pp.1161-1175, 2013-07
• The Effect of Sulfur on the Surface of III-V Compound Semiconductors
  Nannichi Y; Fan J; Oigawa H; Koma A
  Extended Abstracts 22nd Conference on Solid State Devices & Materials/pp.453-456, 1990-01
• Stabilization of GaAs Surface/Interface by Sulfur Treatment
  Oigawa H; Fan J; Nannichi Y; Ando K; Saiki K; Koma A
  Extended Abstracts 20th Conference on Solid State Devices & Materials/pp.263-236, 1988-01
• Synchrotron Radiation Photoemission Study on (NH₄)₂Sx-treated n-GaAs
  Sugahara H; Oshima M; Oigawa H; Shigekawa H; Nannichi Y
  Extended Abstracts 21st Conference on Solid State Devices & Materials/pp.547-548, 1991-08
• Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy
  Oshima M; Scimeca T; Watanabe Y; Oigawa H; Nannichi Y
  Extended Abstracts 24th Conference on Solid State Devices & Materals/pp.545-547, 1992-08
• Sulfur Structural and Chemical Bonding Changes for Metal/S-Passivated GaAs(111) Studied by the X-ray Standing Wave Technique and Synchrotron Radiation Photoemission Spectroscopy
  Sugiyama M; Maeyama S; Scimeca T; Oshima M; Oigawa H; Nan...
  Extended Abstracts 24th Conference on Solid State Devices & Materials/pp.536-538, 1992-08
• Deposition of CaF₂ and GaF₃ on sulfur passivated GaAs (111)A, 100, and (111)B surfaces
  Scimeca T; Muramatsu Y; Oshima M; Oigawa H; Nannichi Y
  Journal of Applied Physics/71/p.4405, 1992-10
• Surface Structures of GaAs(001) with Selenium Adsorbate Studied by Scanning Tunneling Microscopy
  Shigekawa H; Oigawa H; Miyake K; Aiso Y; Nannichi Y
  Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.573-574, 1994-01
• Novel interlayer as an interfacial reaction suppressor in high GaAs Schottky barrier
  Oshima M; Scimeca T; Watanabe Y; Sugiyama M; Maeyama S; O...
  Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.199-204, 1994-01
• Dimer Model for Comprehensive Interpretation of Selenium-Passivated GaAs(001) Surface Structures
  Shigekawa H; Oigawa H; Miyake K; Aiso Y; Nannichi Y
  Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.303-304, 1994-01
• Surface Passivation of III-V Compound Semiconductors with Chalcogen Atoms
  Oigawa H; Shigekawa H; Nannichi Y
  Materials Science Forum/185-188/pp.191-198, 1995-01
• Phase Transition between C(4×2) and P(2×2) Structures of the Si(100) Surface at 6K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
  Shigekawa H; Miyake K; Ishida M; Hata K; Oigawa H; Nannic...
  Japanese Journal of Applied Physics/35(8B)/pp.L1081-L1084, 1996-01
• Reconstruction of the GaAs(001) surface induced by submonolayer Be deposition
  Oigawa H; Wassermeier M; Behrend J; Daeweritz L; Ploog K. H
  Surface Science/376(4)/pp.185-191, 1997-01
• Controlled anisotropic ordering of Be deposited on the GaAs(001) surface
  Oigawa H; Wassermeier M; Behrend J; Daeweritz L; Ploog K.H
  Surface Science/399/pp.39-48, 1998-01
• Si(111) surface under phase transitions studied by the analysis of inner structures using bias-dependent scanning tunneling microscopy
  Miyake K; Kaikoh T; Li Y.-J.; Oigawa H; Shigekawa H
  Japanese Journal of Applied Physics/38(6B)/pp.3841-3844, 1999-01
• STM/RHEED Observation of N-for-As Exchange Reaction on GaAs(001)-2×4 : As Surface
  Imayoshi T; Oigawa H; Shigekawa H; Tokumoto H
  Proceedings of Scanning Tunneling Microscopy/Spectroscopy and Related Proximal Probe Microscopy/pp.179-180, 1999-01
• Initial Stage of Nitridation of GaAs(001) : Atomic Scale View
  Imayoshi T; Oigawa H; Shigekawa H; Tokumoto H
  Japanese Journal of Applied Physics/38(6B)/pp.3875-3878, 1999-01
• Stability and nuclear formation of Si(111)-7×7 structure as determined from charge redistribution in surface layers
  Miyake K; Oigawa H; Hata K; Morita R; Yamashita M; Shigek...
  Surface Science/429(1-3)/pp.260-273, 1999-01
• Surface reconstraction of GaAs(001) nitrided under the controlled As partial pressure
  Imayoshi T; Oigawa H; Shigekawa H; Tokumoto H
  Surface Science/540/pp.L577-L582, 2003-01

more...

Books

• 化合物半導体表面
  大井川 治宏
  ナノテクノロジーのための走査プローブ顕微鏡, 表面分析技術選書・丸善, pp.107-128, 2002-01
• 半導体量子構造の解析
  大井川 治宏
  実戦ナノテクノロジー　走査プローブ顕微鏡と局所分光, 裳華房, pp.402-416, 2005-11
• 薬品を扱うために／その他の技術
  大井川 治宏
  走査プローブ顕微鏡 －正しい実験とデータ解析のために必要なこと－, 実験物理科学シリーズ・共立出版, pp.145-153, 2009-03

Conference, etc.

• Photoresponse of WSe2/MoSe2 in-plane heterostructure probed by a laser-combined multiprobe spectroscopy
  Mogi Hiroyuki; Wang Zi-Han; Bamba Takafumi; Takaguchi Yuh...
  Recent Progress in Graphene & 2D Materials Research (RPGR2019)/2019-10-06--2019-10-10
• GaAs/GaInNAsSb系ヘテロ接合化合物太陽電池の作製と評価
  市川周平; 宮下直也; 上殿明良; 大井川治宏; 岡田至崇
  __'08秋_3_/2008-09
• パルス対励起型STMによる硫黄処理GaAs(001)表面のキャリアダイナミックスと基板依存性
  大井川治宏; 寺田康彦; 大久保淳史; 岩田康史; 藤田高士; 佐...
  __'10秋_1_/2010-09
• Nanoscale dynamics probed by laser-combined scanning tunneling microscopy
  Shigekawa Hidemi; Yoshida Shoji; Takeuchi Osamu; Aoyama M...
  7th International Conference on Nano-Molecular Electronics (ICNME2006)

Intellectural property rights

• ヘテロダインビートプローブ走査顕微鏡およびこれによってトンネル電流に重畳された微小信号の計測方法
  松山英治; 重川秀実; 根本承次郎; 中村潤児; 大井川治宏; 武...
  

Teaching

2018-10 -- 2019-02	Engineering Science Laboratory B	University of Tsukuba.
2018-04 -- 2018-08	Engineering Science Laboratory A	University of Tsukuba.
2018-10 -- 2019-02	Research in Applied Physics IA	University of Tsukuba.
2018-10 -- 2019-02	Research in Applied Physics IB	University of Tsukuba.
2018-10 -- 2019-02	Research in Applied Physics IIA	University of Tsukuba.
2018-10 -- 2019-02	Research in Applied Physics IIB	University of Tsukuba.
2018-10 -- 2019-02	Research in Applied Physics IIIA	University of Tsukuba.
2018-10 -- 2019-02	Research in Applied Physics IIIB	University of Tsukuba.
2018-10 -- 2019-02	Research in Applied Physics IVA	University of Tsukuba.
2018-10 -- 2019-02	Research in Applied Physics IVB	University of Tsukuba.

more...

(Last updated: 2018-11-22)