OIGAWA Haruhiro

Affiliation
Institute of Pure and Applied Sciences
Official title
Assistant Professor
Research fields
Thin film/Surface and interfacial physical properties
Applied materials
Electron device/Electronic equipment
Research keywords
Surface Science
Epitaxial Growth
Electronic Device
Research projects
スピンダイナミックス可視化技術の開拓と新奇機能素子開発への展開2010 -- 2015重川 秀実Japan Society of for the Promotion of Science/Grant-in-Aid for Scientific Research(S)
ナノ構造・超高速現象の解析制御と次世代新機能素子開発への展開2002 -- 2006重川 秀実Japan Society of for the Promotion of Science/基盤研究(S)
Nitride Semiconductor Surface1998 -- 1998/国内共同研究
硫化物処理化合物半導体表面1989 -- 1993/国内共同研究
超低欠陥GaAs結晶成長への挑戦1997 -- 1998南日 康夫Japan Society of for the Promotion of Science/基盤研究(C)3,400,000Yen
半導体レーザの端面劣化機構とその抑制1994 -- 1994Japan Society of for the Promotion of Science/奨励研究(A)1,000,000Yen
硫黄処理GaAs表面の分子線エピタキシーとその構造物性1993 -- 1994Japan Society of for the Promotion of Science/その他6,800,000Yen
原子オーダで制御された半導体ヘテロ界面の作製1992 -- 1992Japan Society of for the Promotion of Science/奨励研究(A)900,000Yen
硫化ガリウムの表面（界面）物性と硫黄処理効果1990 -- 1992南日 康夫Japan Society of for the Promotion of Science/一般研究(A)29,000,000Yen
金属・半導体界面「GaAsショットキー接合」1991 -- 1991南日 康夫Japan Society of for the Promotion of Science/重点領域研究1,400,000Yen
more...
Degree
1990-07EngineeringUniversity of Tsukuba
Academic societies
-- (current)The Japan Society of Applied Physics
Honors & Awards
2021-03-16第5回薄膜・表面物理分科会論文賞
2015応用物理学会論文賞
1998日本表面科学会 論文賞
Articles
  • Photoresponse observation of monolayer WSe2/MoSe2 in-plane heterostructure by a laser-combined multiprobe measurement
    茂木 裕幸; 重川 秀実; 汪 子涵; 番場 隆文; 髙口 裕平; 遠藤 尚彦; 吉田 昭二; 谷中...
    Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science/2019/p.1Da01R, 2019
    CiNii
  • Ultimate High Conductivity of Multilayer Graphene Examined by Multiprobe Scanning Tunneling Potentiometry on Artificially Grown High-Quality Graphite Thin Film
    Mogi Hiroyuki; Bamba Takafumi; Murakami Mutsuaki; Kawashi...
    ACS Applied Electronic Materials/1(9)/pp.1762-1771, 2019-08
    Tsukuba Repository
  • Optical Pump-Probe STM
    重川 秀実; 吉田 昭二; 武内 修; 大井川 治宏
    KENBIKYO/52(1)/pp.46-50, 2017
    CiNii
  • Development of laser-combined scanning multiprobe spectroscopy and application to analysis of WSe2/MoSe2 in-plane heterostructure
    Mogi Hiroyuki; Wang Zi-Han; Banba Takafumi; Takaguchi Yu...
    Appl. Phys. Express/12(4)/p.045002, 2019-03
    Tsukuba Repository
  • Probing spin dynamics by time-resolved STM
    Shoji Yoshida; Osamu Takeuchi; Haruhiro Oigawa; Hidemi S...
    Solid state physics/53(4)/p.165, 2018-04
  • Optical pump-probe STM
    Shigekawa Hidemi; Shoji Yoshida; Osamu Takeuchi; Haruhiro...
    J. Electron Microsc. (Kenbikyo)/52(1)/p.46, 2017-02
  • Probing ultrafast spin dynamics with optical pump-probe scanning tunnelling microscopy
    Shoji Yoshida; Yuta Aizawa; Zi-han Wang; Ryuji Oshima; Yutaka...
    Nature Nanotechnology/9(8)/pp.588-593, 2014-08
  • Principles and Application of Heterodyne Scanning Tunnelling Spectroscopy
    Eiji Matsuyama; Takahiro Kondo; Haruhiro Oigawa; Donghui Guo...
    Scientific Reports/4, 2014-10
    PubMed
  • Bases for Time-Resolved Probing of Transient Carrier Dynamics by Optical Pump-Probe Scanning Tunneling Microscopy
    Yokota Munenori; Yoshida Shoji; Mera Yutaka; Takeuchi Osamu; ...
    NANOSCALE/5(19)/pp.9170-9175, 2013-07
    Tsukuba Repository
  • Optical pump-probe scanning tunneling microscopy for probing ultrafast dynamics on the nanoscale
    Yoshida Shoji; Terada Yasuhiko; Yokota Munenori; Takeuchi Os...
    The European Physical Journal Special Topics/222(5)/pp.1161-1175, 2013-07
  • The Effect of Sulfur on the Surface of III-V Compound Semiconductors
    Nannichi Y; Fan J; Oigawa H; Koma A
    Extended Abstracts 22nd Conference on Solid State Devices & Materials/pp.453-456, 1990-01
  • Stabilization of GaAs Surface/Interface by Sulfur Treatment
    Oigawa H; Fan J; Nannichi Y; Ando K; Saiki K; Koma A
    Extended Abstracts 20th Conference on Solid State Devices & Materials/pp.263-236, 1988-01
  • Synchrotron Radiation Photoemission Study on (NH4)2Sx-treated n-GaAs
    Sugahara H; Oshima M; Oigawa H; Shigekawa H; Nannichi Y
    Extended Abstracts 21st Conference on Solid State Devices & Materials/pp.547-548, 1991-08
  • Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy
    Oshima M; Scimeca T; Watanabe Y; Oigawa H; Nannichi Y
    Extended Abstracts 24th Conference on Solid State Devices & Materals/pp.545-547, 1992-08
  • Sulfur Structural and Chemical Bonding Changes for Metal/S-Passivated GaAs(111) Studied by the X-ray Standing Wave Technique and Synchrotron Radiation Photoemission Spectroscopy
    Sugiyama M; Maeyama S; Scimeca T; Oshima M; Oigawa H; Nannichi...
    Extended Abstracts 24th Conference on Solid State Devices & Materials/pp.536-538, 1992-08
  • Deposition of CaF2 and GaF3 on sulfur passivated GaAs (111)A, 100, and (111)B surfaces
    Scimeca T; Muramatsu Y; Oshima M; Oigawa H; Nannichi Y
    Journal of Applied Physics/71/p.4405, 1992-10
  • Surface Structures of GaAs(001) with Selenium Adsorbate Studied by Scanning Tunneling Microscopy
    Shigekawa H; Oigawa H; Miyake K; Aiso Y; Nannichi Y
    Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.573-574, 1994-01
  • Novel interlayer as an interfacial reaction suppressor in high GaAs Schottky barrier
    Oshima M; Scimeca T; Watanabe Y; Sugiyama M; Maeyama S; Oigawa...
    Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.199-204, 1994-01
  • Dimer Model for Comprehensive Interpretation of Selenium-Passivated GaAs(001) Surface Structures
    Shigekawa H; Oigawa H; Miyake K; Aiso Y; Nannichi Y
    Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.303-304, 1994-01
  • Surface Passivation of III-V Compound Semiconductors with Chalcogen Atoms
    Oigawa H; Shigekawa H; Nannichi Y
    Materials Science Forum/185-188/pp.191-198, 1995-01
  • Phase Transition between C(4×2) and P(2×2) Structures of the Si(100) Surface at 6K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
    Shigekawa H; Miyake K; Ishida M; Hata K; Oigawa H; Nannichi Y; ...
    Japanese Journal of Applied Physics/35(8B)/pp.L1081-L1084, 1996-01
  • Reconstruction of the GaAs(001) surface induced by submonolayer Be deposition
    Oigawa H; Wassermeier M; Behrend J; Daeweritz L; Ploog K. H
    Surface Science/376(4)/pp.185-191, 1997-01
  • Controlled anisotropic ordering of Be deposited on the GaAs(001) surface
    Oigawa H; Wassermeier M; Behrend J; Daeweritz L; Ploog K.H
    Surface Science/399/pp.39-48, 1998-01
  • Si(111) surface under phase transitions studied by the analysis of inner structures using bias-dependent scanning tunneling microscopy
    Miyake K; Kaikoh T; Li Y.-J.; Oigawa H; Shigekawa H
    Japanese Journal of Applied Physics/38(6B)/pp.3841-3844, 1999-01
  • STM/RHEED Observation of N-for-As Exchange Reaction on GaAs(001)-2×4 : As Surface
    Imayoshi T; Oigawa H; Shigekawa H; Tokumoto H
    Proceedings of Scanning Tunneling Microscopy/Spectroscopy and Related Proximal Probe Microscopy/pp.179-180, 1999-01
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Books
  • 硫黄処理による砒化ガリウムの表面物性の研究
    大井川 治宏
    1990-07
  • 化合物半導体表面
    大井川 治宏
    ナノテクノロジーのための走査プローブ顕微鏡/表面分析技術選書・丸善/pp.107-128, 2002-01
  • 半導体量子構造の解析
    大井川 治宏
    実戦ナノテクノロジー　走査プローブ顕微鏡と局所分光/裳華房/pp.402-416, 2005-11
  • 薬品を扱うために／その他の技術
    大井川 治宏
    走査プローブ顕微鏡 －正しい実験とデータ解析のために必要なこと－/実験物理科学シリーズ・共立出版/pp.145-153, 2009-03
Conference, etc.
  • Heterodyne Scanning Tunnelling Spectroscopy
    Matsuyama Eiji; Oigawa Haruhiro; Nakamura Junji; Kondo...
    31st International Colloquium on Scanning Probe Microscopy/2023-12-07--2023-12-08
  • 光励起多探針技術の開発と低次元半導体評価への応用
    茂木 裕幸; 汪 子涵; 高口裕平; 遠藤尚彦; 宮田耕充; 嵐田 雄介; 吉田昭二; 谷中 淳; 大井川...
    第68回応用物理学会春季学術講演会/2021-03-16--2021-03-19
  • 光励起多探針技術の開発と低次元半導体評価への応用
    茂木裕幸; 汪 子涵; 高口裕平; 遠藤尚彦; 嵐田 雄介; 吉田 昭二; 谷中 淳; 大井川治宏; 宮田耕充; 武内 修...
    2021年第68回応用物理学会春季学術講演会/2021-03-16--2021-03-19
  • Photoresponse Measurements of Monolayer WSe2MoSe2 In-plane Heterostructure by an Optically-excited Multiprobe method
    Mogi H.; Wang Z.; Bamba T.; Takaguchi Y.; Endo T.; Yoshid...
    27th International Colloquium on Scanning Probe Microscopy (ICSPM27)/2019-12-05--2019-12-07
  • 光励起多探針計測を用いた単層 WSe2/MoSe2面内ヘテロ構造の光応答評価
    茂木裕幸; 汪子涵; 番場隆文; 髙口裕平; 遠藤尚彦; 吉田昭二; 谷中淳; 大井川治宏; 宮田耕充; 重川 秀実
    2019年日本表面真空学会学術講演会/2019-10-28--2019-10-30
  • Photoresponse of WSe2/MoSe2 in-plane heterostructure probed by a laser-combined multiprobe spectroscopy
    Mogi Hiroyuki; Wang Zi-Han; Bamba Takafumi; Takaguchi Yu...
    Recent Progress in Graphene & 2D Materials Research (RPGR2019)/2019-10-06--2019-10-10
  • GaAs/GaInNAsSb系ヘテロ接合化合物太陽電池の作製と評価
    市川周平; 宮下直也; 上殿明良; 大井川治宏; 岡田至崇
    __'08秋_3_/2008-09
  • パルス対励起型STMによる硫黄処理GaAs(001)表面のキャリアダイナミックスと基板依存性
    大井川治宏; 寺田康彦; 大久保淳史; 岩田康史; 藤田高士; 佐々木亮; 武内修; 重川秀実
    __'10秋_1_/2010-09
  • Nanoscale dynamics probed by laser-combined scanning tunneling microscopy
    Shigekawa Hidemi; Yoshida Shoji; Takeuchi Osamu; Aoyama ...
    7th International Conference on Nano-Molecular Electronics (ICNME2006)
Intellectural property rights
  • 計測装置、観察システム、及び計測方法
    松山 英治; 近藤 剛弘; 大井川 治宏
  • 計測装置、測定装置、及び観察システム
    松山 英治; 近藤 剛弘; 大井川 治宏
  • ヘテロダインビートプローブ走査顕微鏡およびこれによってトンネル電流に重畳された微小信号の計測方法
    松山英治; 重川秀実; 根本承次郎; 中村潤児; 大井川治宏; 武内修; 保田諭
Teaching
2024-12 -- 2025-02Calculus 3University of Tsukuba.
2024-10 -- 2024-12Calculus 2University of Tsukuba.
2024-10 -- 2025-02Research in Applied Physics IVAUniversity of Tsukuba.
2024-10 -- 2025-02Research in Applied Physics IIIAUniversity of Tsukuba.
2024-04 -- 2024-08Research in Applied Physics VBUniversity of Tsukuba.
2024-10 -- 2025-02Research in Applied Physics IAUniversity of Tsukuba.
2024-04 -- 2024-08Research in Applied Physics IIIBUniversity of Tsukuba.
2024-04 -- 2024-08Research in Applied Physics IIBUniversity of Tsukuba.
2024-10 -- 2025-02Research in Applied Physics VBUniversity of Tsukuba.
2024-10 -- 2025-02Research in Applied Physics IVBUniversity of Tsukuba.
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(Last updated: 2024-05-10)