Oigawa Haruhiro

Affiliation

Faculty of Pure and Applied Sciences

Official title

Assistant Professor

Research fields

Thin film/Surface and interfacial physical properties

Applied materials

Electron device/Electronic equipment

Research keywords

Surface Science

Epitaxial Growth

Electronic Device

Research projects

スピンダイナミックス可視化技術の開拓と新奇機能素子開発への展開	2010 -- 2015	重川 秀実	Japan Society of for the Promotion of Science/Grant-in-Aid for Scientific Research(S)
ナノ構造・超高速現象の解析制御と次世代新機能素子開発への展開	2002 -- 2006	重川 秀実	Japan Society of for the Promotion of Science/基盤研究(S)
Nitride Semiconductor Surface	1998 -- 1998		/国内共同研究
硫化物処理化合物半導体表面	1989 -- 1993		/国内共同研究
超低欠陥GaAs結晶成長への挑戦	1997 -- 1998	南日 康夫	Japan Society of for the Promotion of Science/基盤研究(C)	3,400,000Yen
半導体レーザの端面劣化機構とその抑制	1994 -- 1994		Japan Society of for the Promotion of Science/奨励研究(A)	1,000,000Yen
硫黄処理GaAs表面の分子線エピタキシーとその構造物性	1993 -- 1994		Japan Society of for the Promotion of Science/その他	6,800,000Yen
原子オーダで制御された半導体ヘテロ界面の作製	1992 -- 1992		Japan Society of for the Promotion of Science/奨励研究(A)	900,000Yen
硫化ガリウムの表面（界面）物性と硫黄処理効果	1990 -- 1992	南日 康夫	Japan Society of for the Promotion of Science/一般研究(A)	29,000,000Yen
金属・半導体界面「GaAsショットキー接合」	1991 -- 1991	南日 康夫	Japan Society of for the Promotion of Science/重点領域研究	1,400,000Yen

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Degree

1990-07

Engineering

University of Tsukuba

Academic societies

-- (current)

The Japan Society of Applied Physics

Honors & Awards

2021-03-16	第5回薄膜・表面物理分科会論文賞
2015	応用物理学会論文賞
1998	日本表面科学会 論文賞

Articles

• Photoresponse observation of monolayer WSe₂/MoSe₂ in-plane heterostructure by a laser-combined multiprobe measurement
  茂木 裕幸; 重川 秀実; 汪 子涵; 番場 隆文; 髙口 裕平; 遠藤...
  Abstract book of Annual Meeting of the Japan Society of Vacuum and Surface Science/2019/p.1Da01R, 2019
  CiNii
• Ultimate High Conductivity of Multilayer Graphene Examined by Multiprobe Scanning Tunneling Potentiometry on Artificially Grown High-Quality Graphite Thin Film
  Mogi Hiroyuki; Bamba Takafumi; Murakami Mutsuaki; Kawashi...
  ACS Applied Electronic Materials/1(9)/pp.1762-1771, 2019-08
  Tsukuba Repository
• Optical Pump-Probe STM
  重川 秀実; 吉田 昭二; 武内 修; 大井川 治宏
  KENBIKYO/52(1)/pp.46-50, 2017
  CiNii
• Development of laser-combined scanning multiprobe spectroscopy and application to analysis of WSe2/MoSe2 in-plane heterostructure
  Mogi Hiroyuki; Wang Zi-Han; Banba Takafumi; Takaguchi Yuh...
  Appl. Phys. Express/12(4)/p.045002, 2019-03
  Tsukuba Repository
• Probing spin dynamics by time-resolved STM
  Shoji Yoshida; Osamu Takeuchi; Haruhiro Oigawa; Hidemi Sh...
  Solid state physics/53(4)/p.165, 2018-04
• Optical pump-probe STM
  Shigekawa Hidemi; Shoji Yoshida; Osamu Takeuchi; Haruhiro...
  J. Electron Microsc. (Kenbikyo)/52(1)/p.46, 2017-02
• Probing ultrafast spin dynamics with optical pump-probe scanning tunnelling microscopy
  Shoji Yoshida; Yuta Aizawa; Zi-han Wang; Ryuji Oshima; Yu...
  Nature Nanotechnology/9(8)/pp.588-593, 2014-08
• Principles and Application of Heterodyne Scanning Tunnelling Spectroscopy
  Eiji Matsuyama; Takahiro Kondo; Haruhiro Oigawa; Donghui ...
  Scientific Reports/4, 2014-10
  PubMed
• Bases for Time-Resolved Probing of Transient Carrier Dynamics by Optical Pump-Probe Scanning Tunneling Microscopy
  Yokota Munenori; Yoshida Shoji; Mera Yutaka; Takeuchi Osa...
  NANOSCALE/5(19)/pp.9170-9175, 2013-07
  Tsukuba Repository
• Optical pump-probe scanning tunneling microscopy for probing ultrafast dynamics on the nanoscale
  Yoshida Shoji; Terada Yasuhiko; Yokota Munenori; Takeuchi...
  The European Physical Journal Special Topics/222(5)/pp.1161-1175, 2013-07
• The Effect of Sulfur on the Surface of III-V Compound Semiconductors
  Nannichi Y; Fan J; Oigawa H; Koma A
  Extended Abstracts 22nd Conference on Solid State Devices & Materials/pp.453-456, 1990-01
• Stabilization of GaAs Surface/Interface by Sulfur Treatment
  Oigawa H; Fan J; Nannichi Y; Ando K; Saiki K; Koma A
  Extended Abstracts 20th Conference on Solid State Devices & Materials/pp.263-236, 1988-01
• Synchrotron Radiation Photoemission Study on (NH₄)₂Sx-treated n-GaAs
  Sugahara H; Oshima M; Oigawa H; Shigekawa H; Nannichi Y
  Extended Abstracts 21st Conference on Solid State Devices & Materials/pp.547-548, 1991-08
• Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy
  Oshima M; Scimeca T; Watanabe Y; Oigawa H; Nannichi Y
  Extended Abstracts 24th Conference on Solid State Devices & Materals/pp.545-547, 1992-08
• Sulfur Structural and Chemical Bonding Changes for Metal/S-Passivated GaAs(111) Studied by the X-ray Standing Wave Technique and Synchrotron Radiation Photoemission Spectroscopy
  Sugiyama M; Maeyama S; Scimeca T; Oshima M; Oigawa H; Nan...
  Extended Abstracts 24th Conference on Solid State Devices & Materials/pp.536-538, 1992-08
• Deposition of CaF₂ and GaF₃ on sulfur passivated GaAs (111)A, 100, and (111)B surfaces
  Scimeca T; Muramatsu Y; Oshima M; Oigawa H; Nannichi Y
  Journal of Applied Physics/71/p.4405, 1992-10
• Surface Structures of GaAs(001) with Selenium Adsorbate Studied by Scanning Tunneling Microscopy
  Shigekawa H; Oigawa H; Miyake K; Aiso Y; Nannichi Y
  Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.573-574, 1994-01
• Novel interlayer as an interfacial reaction suppressor in high GaAs Schottky barrier
  Oshima M; Scimeca T; Watanabe Y; Sugiyama M; Maeyama S; O...
  Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.199-204, 1994-01
• Dimer Model for Comprehensive Interpretation of Selenium-Passivated GaAs(001) Surface Structures
  Shigekawa H; Oigawa H; Miyake K; Aiso Y; Nannichi Y
  Proc. 1st International Symposium on Control of Semiconductor Interfaces/pp.303-304, 1994-01
• Surface Passivation of III-V Compound Semiconductors with Chalcogen Atoms
  Oigawa H; Shigekawa H; Nannichi Y
  Materials Science Forum/185-188/pp.191-198, 1995-01
• Phase Transition between C(4×2) and P(2×2) Structures of the Si(100) Surface at 6K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
  Shigekawa H; Miyake K; Ishida M; Hata K; Oigawa H; Nannic...
  Japanese Journal of Applied Physics/35(8B)/pp.L1081-L1084, 1996-01
• Reconstruction of the GaAs(001) surface induced by submonolayer Be deposition
  Oigawa H; Wassermeier M; Behrend J; Daeweritz L; Ploog K. H
  Surface Science/376(4)/pp.185-191, 1997-01
• Controlled anisotropic ordering of Be deposited on the GaAs(001) surface
  Oigawa H; Wassermeier M; Behrend J; Daeweritz L; Ploog K.H
  Surface Science/399/pp.39-48, 1998-01
• Si(111) surface under phase transitions studied by the analysis of inner structures using bias-dependent scanning tunneling microscopy
  Miyake K; Kaikoh T; Li Y.-J.; Oigawa H; Shigekawa H
  Japanese Journal of Applied Physics/38(6B)/pp.3841-3844, 1999-01
• STM/RHEED Observation of N-for-As Exchange Reaction on GaAs(001)-2×4 : As Surface
  Imayoshi T; Oigawa H; Shigekawa H; Tokumoto H
  Proceedings of Scanning Tunneling Microscopy/Spectroscopy and Related Proximal Probe Microscopy/pp.179-180, 1999-01

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Books

• 硫黄処理による砒化ガリウムの表面物性の研究
  大井川 治宏
  1990-07
• 化合物半導体表面
  大井川 治宏
  ナノテクノロジーのための走査プローブ顕微鏡, 表面分析技術選書・丸善, pp.107-128, 2002-01
• 半導体量子構造の解析
  大井川 治宏
  実戦ナノテクノロジー　走査プローブ顕微鏡と局所分光, 裳華房, pp.402-416, 2005-11
• 薬品を扱うために／その他の技術
  大井川 治宏
  走査プローブ顕微鏡 －正しい実験とデータ解析のために必要なこと－, 実験物理科学シリーズ・共立出版, pp.145-153, 2009-03

Conference, etc.

• 光励起多探針技術の開発と低次元半導体評価への応用
  茂木 裕幸; 汪 子涵; 高口裕平; 遠藤尚彦; 宮田耕充; 嵐田 雄...
  第68回応用物理学会春季学術講演会/2021-03-16--2021-03-19
• 光励起多探針技術の開発と低次元半導体評価への応用
  茂木裕幸; 汪 子涵; 高口裕平; 遠藤尚彦; 嵐田 雄介; 吉田 昭...
  2021年第68回応用物理学会春季学術講演会/2021-03-16--2021-03-19
• Photoresponse Measurements of Monolayer WSe2MoSe2 In-plane Heterostructure by an Optically-excited Multiprobe method
  Mogi H.; Wang Z.; Bamba T.; Takaguchi Y.; Endo T.; Yoshid...
  27th International Colloquium on Scanning Probe Microscopy (ICSPM27)/2019-12-05--2019-12-07
• 光励起多探針計測を用いた単層 WSe2/MoSe2面内ヘテロ構造の光応答評価
  茂木裕幸; 汪子涵; 番場隆文; 髙口裕平; 遠藤尚彦; 吉田昭二;...
  2019年日本表面真空学会学術講演会/2019-10-28--2019-10-30
• Photoresponse of WSe2/MoSe2 in-plane heterostructure probed by a laser-combined multiprobe spectroscopy
  Mogi Hiroyuki; Wang Zi-Han; Bamba Takafumi; Takaguchi Yuh...
  Recent Progress in Graphene & 2D Materials Research (RPGR2019)/2019-10-06--2019-10-10
• GaAs/GaInNAsSb系ヘテロ接合化合物太陽電池の作製と評価
  市川周平; 宮下直也; 上殿明良; 大井川治宏; 岡田至崇
  __'08秋_3_/2008-09
• パルス対励起型STMによる硫黄処理GaAs(001)表面のキャリアダイナミックスと基板依存性
  大井川治宏; 寺田康彦; 大久保淳史; 岩田康史; 藤田高士; 佐...
  __'10秋_1_/2010-09
• Nanoscale dynamics probed by laser-combined scanning tunneling microscopy
  Shigekawa Hidemi; Yoshida Shoji; Takeuchi Osamu; Aoyama M...
  7th International Conference on Nano-Molecular Electronics (ICNME2006)

Intellectural property rights

• ヘテロダインビートプローブ走査顕微鏡およびこれによってトンネル電流に重畳された微小信号の計測方法
  松山英治; 重川秀実; 根本承次郎; 中村潤児; 大井川治宏; 武...
  

Teaching

2021-10 -- 2021-12	Calculus 2	University of Tsukuba.
2021-04 -- 2021-06	Physics of Semiconductor Devices I	University of Tsukuba.
2021-10 -- 2022-02	Research in Applied Physics IIIA	University of Tsukuba.
2021-10 -- 2022-02	Research in Applied Physics IVA	University of Tsukuba.
2021-04 -- 2021-08	Research in Applied Physics IIIB	University of Tsukuba.
2021-04 -- 2021-08	Research in Applied Physics IB	University of Tsukuba.
2022-01 -- 2022-02	Calculus 3	University of Tsukuba.
2021-10 -- 2022-02	Research in Applied Physics IA	University of Tsukuba.
2021-04 -- 2021-08	Research in Applied Physics IIB	University of Tsukuba.
2021-04 -- 2021-08	Research in Applied Physics VB	University of Tsukuba.

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(Last updated: 2021-08-07)