SANO Nobuyuki

Affiliation
Institute of Pure and Applied Sciences
Official title
Professor
URL
Research fields
Electron device/Electronic equipment
Computational science
Mathematical physics/Fundamental condensed matter physics
Research keywords
Nonequilibrium Statistical Physics
Quantum Electron Transport
Nanotechnology
Electron Device
Device Physics
Deep Learning
Monte Carlo Method
Scattering Theory
Nonequilibrium Green's Functions Method
Device Simulation
Research projects
Nanoscale device simulation that properly includes local potential fluctuations2022-04 -- 2025-03SANO NobuyukiJapan Society for the Promotion of Science/Grant-in-Aid for Scientific Research (B)15,860,000Yen
ナノデバイス􏰃物理モデリング・デバイスシミュレーション2019 -- 2020SANO NobuyukiKioxia Corporation/2,860,000Yen
次世代の産業を支える新機能デバイス・高性能材料の創生2018 -- 2020SANO NobuyukiMinistry of Education,Culture,Sports,Science and Technology (MEXT)/ポスト「京」で重点的に取り組むべき 社会的・科学的課題に関するアプリケーション開発・研究開発14,100,000Yen
Coulomb Interaction in Atomic-Layer FET Devices and Realistic Prediction of Device Characteristics2015-04 -- 2018-03SANO NobuyukiJapan Society for the Promotion of Science/Grant-in-Aid for Scientific Research (B)16,380,000Yen
次世代の産業を支える新機能デバイス・高性能材料の創生2015 -- 2017SANO NobuyukiMinistry of Education,Culture,Sports,Science and Technology (MEXT)/ポスト「京」で重点的に取り組むべき 社会的・科学的課題に関する アプリケーション開発・研究開発
Effects of the Coulomb Interaction and Realistic Device Analyses in 3D Nanoscale Semiconductor Devices2012-04 -- 2015-03SANO NobuyukiJapan Society for the Promotion of Science/Grant-in-Aid for Scientific Research (B)18,330,000Yen
Simulation Study of Long-Range Coulomb Interaction in Nano-Scale Devices2009 -- 2011SANO NobuyukiJapan Society for the Promotion of Science/Grant-in-Aid for Scientific Research (B)17,550,000Yen
宇宙線中性子起因ソフトエラーシミュレーションに関する研究2008-04 -- 2010-03SANO NobuyukiSemiconductor Technology Academic Research Center (STARC)/企業からの受託研究
経済産業省ナノエレクトロニクス・プロジェクト「半古典輸送と量子輸送を融合したナノデバイス・シミュレーションの研究開発」2007-10 -- 2011-03SANO NobuyukiNational Institute of Advanced Industrial Science and Technology (AIST)/その他
Study of High-Density Electron Transport by Three-Dimensional Particle-Based Simulations under Nano-Scale Devices2006 -- 2008SANO NobuyukiJapan Society for the Promotion of Science/Grant-in-Aid for Scientific Research (B)15,610,000Yen
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Career history
2019 -- 2019University of Modena and Reggio EmiliaDepartment PhysicsInvited Professor
2019 -- 2019University of BolognaDepartment of Electronic EngineeringVisiting Professor
2007 -- (current)University of TsukubaInstitute of Applied PhysicsProfessor
2002 -- 2007University of TsukubaInstitute of Applied PhysicsAssociate Professor
1995 -- 2002University of TsukubaInstitute of Applied PhysicsAssistant Professor
1988 -- 1995NTT Atsugi Research Lab.Research Scientist
Academic background
-- 1988-08Auburn University Graduate School, Division of Physics Theoretical Physics
Degree
1988-08Ph.D.Auburn University
Academic societies
1984 -- (current)American Physical Society
2013 -- (current)IEEE
Honors & Awards
1992Outstanding Research Award
1988Outstanding Research Award (Auburn University)
Articles
Books
  • Space-Average Impurity-Limited Resistance and Self-Averaging in Quasi-1D Nanowires
    Sano Nobuyuki
    2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016)/IEEE/pp.60-63, 2016
  • A Theoretical Study on Dielectric Breakdown
    佐野 伸行
    1988-08
  • シミュレーション工学
    佐野 伸行
    2000
  • デバイスシミュレーション序論・実習
    佐野 伸行
    2009
  • 計算機実習
    佐野 伸行
    2009
  • Monte Corlo Simulation of Ionization Phenomena in Si-MOSFET's
    佐野 伸行
    1991-01
  • Nonlocality of Impact Ionization Processes under Inhomogeneous Electric Fields : A Full-Band Monte Carlo Approach
    佐野 伸行
    1993-01
  • Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
    Sano Nobuyuki; Karasawa Takahiko
    TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS/TRANS TECH PUBLICATIONS LTD/pp.207-213, 2011-01
  • Effects of gate-edge metamorphoses (GEM) on device characteristics of scaled MOSFETs
    Yamada Tatsuya; Sano Nobuyuki
    2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2/IEEE/pp.78-79, 2007-01
  • 3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes
    Uechi Tadayoshi; Fukui Takayuki; Sano Nobuyuki
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 1/WILEY-V C H VERLAG GMBH/pp.102-106, 2008-01
  • Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures: Role of Coulomb interaction, Degeneracy, and Boundary Condition
    Nakanishi Kohei; Uechi Tadayoshi; Sano Nobuyuki
    2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING/IEEE/pp.71-74, 2009-01
Conference, etc.
  • Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carrier
    F.Hashimoto; T.Suzuki; H.Minari; N.Nakazaki; J.Komachi; S...
    2023 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2023)/2023-09-27--2023-09-29
  • キャリアの捕獲・励起過程を導入した自己無撞着 モンテカルロデバイスシミュレーション
    佐野 伸行
    シリコン材料・デバイス(SDM)研究会集会/2023-11-09--2023-11-10
  • Effect of the double grading on the electric field and the generation rate in Cu(In,Ga)Se2 solar cells
    A. Lafuente-Sampietro K. Yoshida; 秋本克洋; Sano Nobuyuki; SAK...
    The 29th Photovoltaic Science and Engineering Conference (PVSEC29)/2019-11-07
  • Science and Education at the University of Tsukuba, Japan
    Sano Nobuyuki
    Special Seminar at the School of Engineering and Architecture/2019-05-30--2019-05-30
  • Science and Education at the University of Tsukuba, Japan
    Sano Nobuyuki
    Special Seminar at the Department of Physics/2019-05-16--2019-05-16
  • Self-Consistent Monte-Carlo Simulations for Modern Electron Devices
    Sano Nobuyuki
    nternational Conference on Solid State Materials and Devices (SSDM-2016)/2016-09-26--2016-09-29
  • 不純物の離散性に伴った半導体デバイスモデリングの基本的側面 ~ランダム不純物ばらつきと自己平均化~
    佐野 伸行
    電子情報通信学会 シリコン材料・デバイス(SDM)研究会集会/2017-11-09--2017-11-10
  • Fundamental Aspects of Discrete Impurity Model for Nano-Scale Device Simulations
    Sano Nobuyuki
    Seminar on Noise and Reliability in Silicon Electronics/2017-11-01--2017-11-01
  • モンテカルロ・デバイスシミュレーションの基本的側面と応用
    佐野 伸行
    第3回CDMSI（ポスト「京」重点課題（７））シンポジウム/2017-12-05--2017-12-06
  • 微細構造デバイスシミュレーションにおける局所的な乱れによるポテンシャルゆらぎの物理的側面
    佐野 伸行
    第65回応用物理学会春季学術講演会 シンポジウム「デバイスシミュレーション技術の活用と将来展望」/2018-03-17--2018-03-20
  • 不純物の離散性に伴った半導体デバイスモデリングの基本的側面 II ~半導体ナノ構造でのランダム不純物~
    佐野 伸行
    電子情報通信学会 シリコン材料・デバイス(SDM)研究会集会/2019-11-07--2019-11-08
  • Polarization Effect Induced by Discrete Impurity at Semiconductor/Oxide Interface in Si-FinFET
    Sano Nobuyuki
    2019 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2019)/2019-09-04--2019-09-07
  • Variability and Self-Average of Impurity-limited Resistance in Semiconductor Nanowires
    Sano Nobuyuki
    7th Annual World Congress of Nano Science & Technology-2017/2017-10-24--2017-10-26
  • Physical Issues in Device Modeling: Length-Scale, Disorder, and Phase Interference
    Sano Nobuyuki
    International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)/2017-09-07--2017-09-09
  • Large Mobility Modulation Due to Discrete Impurities in Nanowires
    Sano Nobuyuki
    Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 held during the PRiME Joint Int Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society/2016-10-02--2016-10-07
  • Role of Coulomb Interaction in Nanoscale MOSFETs: A Theoretical Viewpoint
    佐野 伸行
    International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2014) Workshop/2010-09-08--2010-09-11
  • Role of Coulomb Interaction in Nanoscale MOSFETs: A Theoretical Viewpoint
    佐野 伸行
    International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2014) Workshop/2014-09-08--2014-09-11
  • Effect of Impurity Scattering on Mobility in Si Nanowire Junctionless FETs
    佐野 伸行
    International Workshop on Computational Electronics (IWCE-17)/2014-06-03--2014-06-06
  • Monte Carlo Study of the long-range Coulomb interaction for Junctionless Transistors
    佐野 伸行
    International Workshop on Computational Electronics (IWCE-17)/2014-06-03--2014-06-06
  • Multi-Scale Monte Carlo Simulation of Soft Errors Using PHITS-HyENEXSS Code System
    Abe Shin-ichiro; Watanabe Yukinobu; Shibano Nozomi; Sano ...
    Conference on Radiation Effects on Components and Systems (RADECS)/Radiation Effects Data Workshop/2011-09-19--2011-09-23
  • Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
    Sano Nobuyuki; Karasawa Takahiko
    International Symposium on Technology Evolution for Silicon Nano-Electronics/2010-06-03--2010-06-05
  • Effects of gate-edge metamorphoses (GEM) on device characteristics of scaled MOSFETs
    Yamada Tatsuya; Sano Nobuyuki
    International Semiconductor Device Research Symposium/2007-12-12--2007-12-14
  • 3D Monte Carlo simulation including full Coulomb interaction under high electron concentration regimes
    Uechi Tadayoshi; Fukui Takayuki; Sano Nobuyuki
    15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors/2007-10-8--2007-10-10
Teaching
2024-10 -- 2025-02Science and Technology Seminar IIIUniversity of Tsukuba.
2024-04 -- 2024-08Science and Technology Seminar IIIUniversity of Tsukuba.
2024-10 -- 2025-02Research in Nano-Science and Nano-Technology IIAUniversity of Tsukuba.
2024-04 -- 2024-08Research in Nano-Science and Nano-Technology IIIBUniversity of Tsukuba.
2024-04 -- 2024-08Research in Nano-Science and Nano-Technology IAUniversity of Tsukuba.
2024-10 -- 2025-02Research in Nano-Science and Nano-Technology IBUniversity of Tsukuba.
2024-10 -- 2025-02Seminar under Industry-University Collaboration IIIUniversity of Tsukuba.
2024-04 -- 2024-08Seminar under Industry-University Collaboration IIIUniversity of Tsukuba.
2024-10 -- 2025-02Research in Nano-Science and Nano-Technology IAUniversity of Tsukuba.
2024-10 -- 2025-02Science and Technology Seminar IIUniversity of Tsukuba.
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Other educational activities
2022-08 -- 2022-09Modern Device ModelingSony
2019-02 -- 2019-09イタリア　モデナ大学 （物理学科講義） Transport Phenomena in Semiconductors and NanostructuresUniversity of Modena and Reggio-Emilia
2019-05 -- 2019-05Seminar at the University of BolognaUniversity of Bologna
2011-06 -- 2017国立交通大学　特別講義 「Quantum Transport Theory: A Simple Application of Nonequilibrium Green Functions」台湾　国立交通大学
2010-12 -- 2016-05Sepcial Seminar at NCTU台湾　国立交通大学
2006-06 -- 2006-06Lecture: Many-Partcile Quantum Theory of Electron Transport米国　マサチューセッツ大学
2005-08 -- 2006-08文部科学省ナノテクノロジーサマースクール「量子効果素子の物理」学外
Talks
  • Physical Modeling and Simulation of Semiconductor Devices, and their Implications
    佐野 伸行
    Sony Public Lecture/2022-08-04--2022-08-04
  • ナノデバイスのシミュレーョン：なぜ、モンテカルロ法か？
    佐野 伸行
    第60回応用物理学会春季学術講演会 シンポジウム「半導体モデリング・シミュレーションの現状と将来展望」/2013-03-27
  • 大学院連携WG～筑波大学オナーズプログラムからＴＩＡ連携大学院への展開～
    村上浩一; 佐野伸行
    第2回つくばイノベーションアリーナ（TIA-nano）公開シンポジウム/2011-11-25
  • Past and Future of Theory and Simulation for Semiconductor Devices
    Nobuyuki Sano
    JST, NSF, MEST and NSC US-Japan-Korea-Taiwan Workshop/2010-07-26
  • 極微細シリコンナノデバイスにおける電流ゆらぎとその物理的起源
    佐野 伸行
    電気学会調査専門委員会/2011-07-29
  • The Role of High-Doped Source and Drain on Device Performance in Nano-Scale Si-MOSFETs
    佐野 伸行
    2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK)/2011-05-19
  • Electron Kinetic Transport under Localized Impurities: How Could Localized Impurities be Incorporated in Simulations?
    Nobuyuki Sano
    9-th IMACS Seminar on Monte Carlo Methods (MCM-2003)/2003-09-15
  • Electron Transport and Particle-based Simulations for Nanoscale Semiconductor Devices
    Nobuyuki Sano
    2005 International Meeting for Future of Electron Devices, Kansai/2005-04-11
  • Electron Transport in Nanoscale Semiconductor Devices: Ballistic vs. Quasiballistic
    Nobuyuki Sano
    2005 VLSI-TSA Technology Symposium/2005-04-25
  • SiナノワイヤFETのモンテカルロシミュレーション
    佐野 伸行
    応用物理学会シンポジウム「2020～30年代のナノエレクトロニクスデバイスの本命を考える」/2010-03-19
  • ナノスケールMOSFETにおける電子輸送機構とデバイスシミュレーション
    佐野 伸行
    応用物理学会シンポジウム「半導体のプロセス・デバイス・回路のモデリングとシミュレーション」/2010-03-17
  • Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
    Nobuyuki Sano
    International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2010)/2010-09-06
  • Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
    M.V.Fischetti; S. Jin; T.-w. Tang; P. Asbeck; Y. Taur; S. ...
    217th ECS Meeting/2010-04-25
  • Simulation of Electron Transport in Si Nano Devices
    Nobuyuki Sano
    G-COE PICE International Symposium on Silicon Nano Devices in 2030 - Prospects by World's Leading Scientists/2009-10-13
  • Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
    M.V.Fischetti; S. Jin; T.-w. Tang; P. Asbeck; Y. Taur; S. ...
    International Workshop on Computational Electronics (IWCE-13)/2009-05-27
  • ナノスケール・デバイス構造での電子輸送とポテンシャル揺らぎ
    佐野 伸行
    特定領域研究「シリコンナノエレクトロニクスの新展開―ポストスケーリングテクノロジー」第３回 成果報告会/2009-01-28
  • 少数電子で動く未来デバイスの姿 -デバイスシミュレーションからのメッセージ-
    佐野 伸行
    応用物理学会シンポジウム「ポストスケーリング時代をデバイス・物性物理から斬る -これが半導体デバイスの未来像だ-」/2009-04-01
  • Impact of the Coulomb Interaction on Nano-scale Device Characteristics: A Monte Carlo Study
    Nobuyuki Sano
    IEEE EDS Mini-colloquium for Nano CMOS and Nanowire/2009-02-21
  • IEDM2007報告会 モデリング・シミュレーション・セッション
    佐野伸行
    IEEE EDチャプター/2008-01-14
  • ナノデバイスでの微視的揺らぎと電子輸送、そしてデバイス特性ばらつき
    佐野伸行
    特定領域研究「シリコンナノエレクトロニクスの新展開―ポストスケーリングテクノロジー」/2008-03-07
  • ３次元モンテカルロ・シミュレーションによる縮退電子のクーロン相互作用の導入
    福井貴之; 上地忠良; 佐野伸行
    応用物理学会シンポジウム「半導体のプロセス・デバイス・回路のモデリングとシミュレーション」/2008-03-28
  • 3D Monte Carlo Simulations of Nano-scale Devices: Impact of Coulomb Interaction on Device Characteristics
    Nobuyuki Sano; Tadayoshi Uechi; Takayuki Fukui
    Technical Seminar, International Conference on Solid State Materials and Devices (SSDM-2008)/2008-09-23
  • 電子デバイスにおける特性ばらつきの物理的起源
    佐野伸行
    学振第154委員会 第42回研究会/2003-06-01
  • 微細MOSFETでの離散不純物に伴った巨視的ポテンシャルと微視的ポテンシャル
    三浦真澄; 佐野伸行
    応用物理学会シンポジウム/2004-03-29
  • High-k導入に伴った極微細素子構造での揺らぎと輸送機構
    佐野伸行
    誘電体薄膜集積技術調査専門委員会/2004-12-20
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Professional activities
2019 -- 2021文部科学省大学設置分科会専門委員会（専門職大学（工業））/主査
2019 -- 2021文部科学省大学設置分科会専門委員会（工学）
2017 -- 2018文部科学省工学系教育の在り方に関する調査研究WG
2011 -- 2011新エネルギー・産業技術総合開発機構MIRAIプロジェクト評価委員
2008 -- 2013Japanese Journal of Applied PhysicsAssociate Editor
2007 -- 2008IEDMプログラム委員
2006 -- 2007SSDM-2007 実行委員
2006 -- (current)HCIS プログラム委員、実行委員
2003 -- (current)応用物理学会シリコンテクノロジー分科会常任理事
2003 -- 2018Chair, Program Committee (SISPAD-2005)
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University Management
2024-04 -- (current)教育および入試改革プロジェクト会議
2022-04 -- 2023-03応用理工学類運営委員応用理工学類電子・量子工学主専攻主任
2020-04 -- 2024-03教学マネジメント室運営会議
2019-04 -- (current)総合学域群運営委員アカデミックアドバイザー
2018-04 -- (current)入試改革検討委員会
2018-04 -- 2021-03副学長（教育担当）補佐
2017-04 -- 2019-03学長補佐
2016-04 -- 2021-03総合理工学位プログラム運営委員長
2016-04 -- 2018-03Provost of Science and Engineering
2012-04 -- 2014-03応用理工学類長
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(Last updated: 2024-11-01)