Hasunuma Ryu

Affiliation
Institute of Pure and Applied Sciences
Official title
Associate Professor
Email
/92DF?F>2]CJF]7FTc_F]EDF<F32]24];Aj
Office
3F612
Fax
029-853-5205
Research keywords
SiC
Si
reliability
SiO2
Degree
2001-03博士（工学）Waseda University
Academic societies
2006-02 -- (current)Electrochemical Society
2006-02 -- (current)Institute of Electrical and Electronics Engineers (IEEE)
1994-02 -- (current)The Japan Society of Applied Physics
Articles
Books
  • 走査型プローブ顕微鏡による原子操作および電気伝導特性解析に関する研究
    蓮沼 隆
    2001-03
Conference, etc.
  • SiC酸化膜界面の基礎物性解明に向けて
    矢野 裕司; 岡本大; 梅田享英; 櫻井岳暁; 蓮沼隆
    SIP「次世代パワーエレクトロニクス」公開シンポジウム/2019-03-28--2019-03-29
  • Reliability factors of ultrathin dielectric films based on highly controlled SiO2 films
    Hasunuma Ryu; Kawamura Hiroaki; Yamabe Kikuo
    International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology (IWDTF)/2017-11-20--2017-11-22
  • Characterization of Interface State Density of SiO2/SiC(000-1) Based on Oxygen Concentration at the Interface during Thermal Oxidation
    Hasunuma Ryu; Hanasato Kohei; Yamabe Kikuo
    Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 held during the PRiME Joint International Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society/2016-10-02--2016-10-07
  • Interfacial Transitional Layer in SiO2 Film Thermally Grown on SiC(000-1)
    Nagai Ryu; Iitsuka Nozomu; Ozawa Kodai; Hasunuma Ryu; ...
    Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 held during the PRiME Joint International Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society/2016-10-02--2016-10-07
  • 熱酸化SiO2/SiC界面近傍の不均一層とそのリーク電流特性
    Hasunuma Ryu
    電子デバイス界面テクノロジー研究会2017/2017-01--2017-01
  • SiC C 面上に乾燥酸素および水蒸気雰囲気で形成した熱酸化SiO2 膜密度
    Hasunuma Ryu
    電子デバイス界面テクノロジー研究会2017/2017-01--2017-01
  • SiC上TEOS-SiO2の熱処理による絶縁特性の改善
    Hasunuma Ryu
    電子デバイス界面テクノロジー研究会2017/2017-01--2017-01
  • 熱酸化SiO2/SiC界面遷移層の評価
    Hasunuma Ryu
    第77回応用物理学会秋季学術講演会/2016-09--2016-09
  • SiC上wet酸化膜密度評価
    Hasunuma Ryu
    第75回応用物理学会秋季学術講演会/2016-09--2016-09
  • SiC C 面上に水蒸気雰囲気で形成した熱酸化SiO2膜の
    Hasunuma Ryu
    第64回応用物理学会春季学術講演会/2017-03--2017-03
  • SiC(000-1)のウェット酸化における界面酸化剤濃度
    Hasunuma Ryu
    第64回応用物理学会春季学術講演会/2017-03--2017-03
  • SiC上TEOS-SiO2の熱処理による絶縁特性の改善
    Hasunuma Ryu
    第64回応用物理学会春季学術講演会/2017-03--2017-03
  • Interfacial Transitional Layer in SiO2 Film Thermally Grown on SiC(000-1)
    Hasunuma Ryu; Hanasato Kohei
    PRiME 2016/2016-10-02--2016-10-07
  • Characterization of Interface State Density of SiO2/SiC (000-1) Based on Oxygen Concentration
    Hasunuma Ryu; Hanasato Kohei
    PRiME 2016/2016-10-02--2016-10-07
  • Direct Observation of Energy Distribution of Interface States at SiO2/4H-SiC Interface
    Yamashita Y.; Hasunuma Ryu; Nagata T.; Chikyow T.
    Symposium on Gallium Nitride and Silicon Carbide Power Technologies 6 held during the PRiME Joint International Meeting of The Electrochemical-Society, The Electrochemical-Society-of-Japan, and the Korean-Electrochemical-Society/2016-10-02--2016-10-07
  • Nitrogen Concentration Dependence on Electrical Characteristics of HfSiON Dielectric Film
    蓮沼 隆; 内藤 達也; 犬宮 誠治; 山部 紀久夫
    電子情報通信学会技術研究報告
  • Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application
    Hasunuma Ryu; Tamura Chihiro; Nomura Tsuyoshi; Kikuchi Yuuki...
    IEDM
  • Development of a Novel System for Characterizing MOSFET Noise in Higher Frequency Regimes
    Ohmori Kenji; Hasunuma Ryu; Yamada Keisaku
    IEEE International Conference on Microelectronic Test Structures (ICMTS)/2012-03-20--2012-03-22
  • Generation and Growth of Atomic-scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface
    Hayashi Yuusuke; Hasunuma Ryu; Yamabe Kikuo
    International Symposium on Technology Evolution for Silicon Nano-Electronics/2010-06-03--2010-06-05
  • Comprehensive analysis of positive and negative bias temperature instabilities in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1 nm
    Sato Motoyuki; Yamabe Kikuo; Shiraishi Kenji; Miyazaki S...
    International Conference on Solid State Devices and Materials
  • Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack
    Chen Jun; Sekiguchi Takashi; Fukata Naoki; Takase Masami...
    International Conference on Solid State Devices and Materials
  • Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
    Tamura Chihiro; Hayashi Tomohiro; Kikuchi Yuuki; Ohmori ...
    International Workshop on Dielectric Thin Films for Future ULSI Devices
  • Vestiges of Multiple Progressive Dielectric Breakdown on HfSiON Surfaces
    Hayashi Tomohiro; Tamura Chihiro; Sato Motoyuki; Hasunuma...
    International Workshop on Dielectric Thin Films for Future ULSI Devices
  • Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing
    Sometani Mitsuru; Hasunuma Ryu; Ogino Masaaki; Kuribayash...
    International Workshop on Dielectric Thin Films for Future ULSI Devices
  • Roughness Increase on Surface and Interface of SiO2 Grown on Atomically Flat Si(111) Terrace
    Ohsawa Keichiro; Hayashi Yusuke; Hasunuma Ryu; Yamabe Kikuo
    International Workshop on Dielectric Thin Films for Future ULSI Devices
  • more...
Teaching
2023-04 -- 2023-08Research in Nano-Science and Nano-Technology IAUniversity of Tsukuba.
2023-10 -- 2023-12Science and Technology Seminar IUniversity of Tsukuba.
2023-10 -- 2024-02Seminar under Industry-University Collaboration IUniversity of Tsukuba.
2023-04 -- 2023-08Seminar under Industry-University Collaboration IUniversity of Tsukuba.
2023-04 -- 2023-08Research in Nano-Science and Nano-Technology IIIAUniversity of Tsukuba.
2023-10 -- 2024-02Research in Nano-Science and Nano-Technology IIBUniversity of Tsukuba.
2023-10 -- 2024-02Research in Applied Physics IIIAUniversity of Tsukuba.
2023-10 -- 2024-02Research in Applied Physics IAUniversity of Tsukuba.
2023-04 -- 2023-08Research in Applied Physics IIBUniversity of Tsukuba.
2023-04 -- 2023-08Science and Technology Seminar IIIUniversity of Tsukuba.
more...
Professional activities
2012-04 -- (current)応用物理学会シリコンテクノロジー分科会幹事
2006-04 -- (current)電子デバイス界面テクノロジー研究会プログラム委員
2010-04 -- (current)International Microprocesses and Nanotechnology Conference論文委員

(Last updated: 2023-05-08)