OKUMURA Hironori
- Affiliation
- Institute of Pure and Applied Sciences
- Official title
- Assistant Professor
- ORCID
- 0000-0002-5464-9169
- KAKEN ID
- 80756750
- URL
- Research fields
Electronic materials/Electric materials Crystal engineering Thin film/Surface and interfacial physical properties - Research projects
半導体材料 2024-04 -- 2027-03 奥村宏典 東京エレクトロン/2023年度 共同研究公募制度 Development of an Innovative Contact Lens Device for Measurement and Removal of Reactive Oxygen Species in Advanced Dry Eye Treatment 2024-04 -- 2025-03 Sujin Hoshi Univ. of Tsukuba/R&D Project with Inter-Faculty Team 2,000,000Yen Development of vacuum UV light emitting devices with controllable wavelength 2024-04 -- 2027-03 Hironori Okumura TEPCO Memorial Foundation/基礎研究 7,875,000Yen Fabrication of vertical AlN devices 2023-04 -- 2027-03 Hironori OKUMURA Japan Society for the Promotion of Science/Grant-in-Aid for Scientific Research(B) 18,590,000Yen Demonstration of pixel detectors with high radiation tolerant semiconductors 2022-04 -- 2024-03 Hironori Okumura TIA program/Kakehashi 3,810,000Yen Ga2O3 hot electron transistors 2021-10 -- 2023-03 Hironori Okumura SEI group CSR Foundation/Research grant 1,700,000Yen Activation mechanism of implanted impurities in III-Nitrides 2021-04 -- 2025-03 Akira Uedono Japan Society for the Promotion of Science/Grant-in-Aid for Scientific Research(B) 17,290,000Yen Normally-off operation of (AlGa)2O3/Ga2O3 HEMTs 2020-10 -- 2021-09 Hironori Okumura Samco Science and Technology Foundation/4th Research grant 2,000,000Yen Development of radiation-tolerance GaN optical detectors 2020-06 -- 2021-05 Hironori Okumura The Murata Science Foundation/36th Research grant 2,250,000Yen High radiation tolerant detector for radioactive isotope beam 2020-04 -- 2022-03 imura masataka TIA program/kakehashi 5,100,000Yen more... - Career history
2018-04 -- (current) University of TsukubaAssistant Professor (Tenure) 2016-04 -- 2018-03 MITEECSvisiting researcher 2015-04 -- 2016-03 EPFLPhysicsvisiting researcher 2015-04 -- 2018-03 University of TsukubaAssistant Professor (Tenure Track) 2014-04 -- 2015-03 NTT Basic research laboratoryPost-doc 2012-04 -- 2014-03 UCSBMaterialsPost-doc (JSPS fellowship) - Academic background
2007-04 -- 2012-03 Kyoto University Electrical and Electronics Engineering 2003-04 -- 2007-03 Kyoto University Electrical and Electronics Engineering - Degree
2012-03 Ph.D, engineering Kyoto University - Licenses and qualifications
2014-10 Specified high pressure gas handling supervisor - Academic societies
2021-12 -- (current) JSAP Ionization Radiation Division 2019-12 -- (current) Japanese Society of Applied Physics 2019-12 -- 2021-12 Japanese Association for Crystal Growth 2016-12 -- 2018-12 Material Research Society - Honors & Awards
2021-03-08 CGCT Young Scientist Award 2020-11-17 Young Faculty Award in University of Tsukuba 2019-09-03 SSDM Young Researcher Award - Articles
- Fully vertical AlN-on-SiC Schottky barrier diodes
Okumura Hironori; Imura Masataka; Miyazawa Fuga; Maini...
JAPANESE JOURNAL OF APPLIED PHYSICS/63(10), 2024-10-01 - Investigation of interface traps in β-(AlGa)2O3/Ga2O3 heterostructures by dynamic capacitance dispersion technique
Florena Fenfen Fenda; Traore Aboulaye; Okumura Hironor...
APPLIED PHYSICS LETTERS/125(9), 2024-08-26 - Study of radiation tolerance of Cu (In, Ga) Se2 detector
Itabashi Kosuke; Fujii S.; Imura M.; Isobe T.; Miyaha...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment/1067, 2024-07 - MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates
OKUMURA Hironori; Varley Joel B.
Japanese Journal of Applied Physics/63(7)/p.075502, 2024-06 - The CIGS semiconductor detector for particle physics
Togawa Manabu; Fujii S.; Imura M.; Itabashi K.; Isobe...
Journal of Instrumentation/19(5)/p.C05042, 2024-05 - Si-doped (AlGa)2O3 growth on a-, m- and r-plane α-Al2O3 substrates by molecular beam epitaxy
Okumura Hironori; Fassion Andréa; Mannequin Cédric
Japanese Journal of Applied Physics/63(5)/p.055502, 2024-05 - Electrical properties of vertical Cu2O/β-Ga2O3 (001) p-n diodes
Jia Yun; Sato Sora; Traore Aboulaye; Morita Ryo; Broc...
AIP ADVANCES/13(10), 2023-10-01 - Degradation of vertical GaN diodes during proton and xenon-ion irradiation
Okumura Hironori; Ogawara Yohei; Togawa Manabu; Miyaha...
JAPANESE JOURNAL OF APPLIED PHYSICS/62(6)/p.064001, 2023-06 - Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates
Okumura Hironori; Watanabe Yasuhiro; Shibata Tomohiko
APPLIED PHYSICS EXPRESS/16(6)/p.064005, 2023-06 - Pseudomorphic growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates by molecular beam epitaxy
Okumura Hironori
JAPANESE JOURNAL OF APPLIED PHYSICS/62(6)/p.065504, 2023-06 - Annealing effects on Cu(In,Ga)Se2 solar cells irradiated by high-fluence proton beam
Nishinaga Jiro; Togawa Manabu; Miyahara Masaya; Itabas...
JAPANESE JOURNAL OF APPLIED PHYSICS/62, 2023-04 - Mg implantation in AlN layers on sapphire substrates
Okumura Hironori; Uedono Akira
JAPANESE JOURNAL OF APPLIED PHYSICS/62(2)/p.020901, 2023-02 - Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection
Imura Masataka; Togawa Manabu; Miyahara Masaya; Okumura ...
Functional Diamond/2(1)/pp.167-174, 2023-01 - Sn and Si doping of alpha-Al2O3 (10-10) layers grown by plasma-assisted molecular beam epitaxy
Okumura Hironori
JAPANESE JOURNAL OF APPLIED PHYSICS/61(12)/p.125505, 2022-11 - Photoconductivity buildup and decay kinetics in unintentionally doped β-Ga2O3
Aboulaye Traore; Okumura Hironori; Sakurai Takeaki
JAPANESE JOURNAL OF APPLIED PHYSICS/61(9), 2022-08 - Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing
Okumura Hironori
Japanese Journal of Applied Physics/61(2)/p.026501, 2022-02 - Optical and electrical properties of silicon-implanted α-Al2O3
Hironori Okumura; Riena Jinno; Akira Uedono; Masataka Imura
Japanese Journal of Applied Physics/60(10), 2021-09 - Electrical properties of heavily Sn-doped (AlGa)2O3 layers on β-Ga2O3 (010) substrates
Hironori Okumura
Japanese Journal of Applied Physics/60(6), 2021-06 - Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
Traore Aboulaye; Gouveia Maria; Okumura Hironori; Mannequ...
Japanese Journal of Applied Physics/60/pp.SBBD15-SBBD15-4, 2021-02 - Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy
Okumura Hironori
Japanese Journal of Applied Physics/59(7), 2020-06 - Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination
Okumura Hironori; Tanaka Taketoshi
Japanese Journal of Applied Physics/58(12), 2019-12 - Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm
Lemettinen Jori; Chowdhury Nadim; Okumura Hironori; Ki...
IEEE ELECTRON DEVICE LETTERS/40(8)/pp.1245-1248, 2019-08 - Demonstration of lateral field-effect transistors using Sn-doped β-(AlGa)2O3 (010)
Okumura Hironori; Kato Yuji; Oshima Takayoshi; Palacios Tomás
Jpn. J. Appl. Phys./58(SB::S)/p.SBBD12, 2019-03 - Fabrication of an AlN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution
Okumura Hironori
JAPANESE JOURNAL OF APPLIED PHYSICS/58(2), 2019-02 - N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications
Lemettinen Jori; Okumura Hironori; Palacios Tomás; Suihko...
Applied Physics Express/11(10)/p.101002, 2018-09 - more...
- Fully vertical AlN-on-SiC Schottky barrier diodes
- Books
- Other Research Environment
奥村 宏典
The Surface Science Society of Japan, 2016
- Other Research Environment
- Conference, etc.
- Si doping of alpha-Al2O3 grown by molecular beam epitaxy
Okumura Hironori
International Workshop on Gallium Oxide and Related Materials/2024-05-26--2024-05-31 - High-temperature and high-power devices using AlN
Okumura Hironori
16th International Symposium on Advanced Plasma Science/2024-03-03--2024-03-07 - 1000 K operation of SBDs and MESFETs with Si-implanted AlN channel
Okumura Hironori
The 14th International Conference on Nitride Semiconductors/2023-11-12--2023-11-17 - Electrical properties of silicon-implanted alpha-Al2O3
Okumura Hironori; Jinno Riena; UEdono Akira; Imura Masataka
The 4th International Workshop on Gallium Oxide and Related Materials/2022-10-23--2022-10-27 - Alpha-particle detectors with GaN PiN homoepitaxial layer
Okumura Hironori; Ogawara Yohei; Togawa Maanbu; Miyahara ...
2021 International Conference on Solid State Devices and Materials/2021-09-06--2021-09-09 - Photo-induced Conductivity Transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
Traore Aboulaye; Gouveia Maria; Hironori Okumura; Mannequ...
2020 International Conference on Solid State Devices and Materials SSDM 2020/2020-09-27--2020-09-30 - Electrical property of n-type β-(AlGa)2O3 layers with low Al composition
Okumura Hironori
8th Asian Conference on Crystal Growth and Crystal Technology/2021-03-01--2021-03-04 - Growth and electrical property of n-type β-(AlGa)2O3 layers
Okumura Hironori
Virtual Workshop on Materials Science and Advanced Electronics/2021-02-01--2021-02-03 - (AlGa)2O3/Ga2O3 resonant tunneling diodes
Okumura Hironori
Compound Semiconductor Week 2020/2020-05-17--2020-05-21 - Demonstration of m-plane GaN MOSFETs
Okumura Hironori
2019 International Conference on Solid State Devices and Materials/2019-09-02--2019-09-05 - Demonstration of (AlGa)2O3-channel MOSFETs
Okumura Hironori
2019 International Workshop on Gallium Oxide and related materials/2019-08-12--2019-08-15 - N-polar AlN POLFET
Okumura Hironori; Lemettinen Jori; Suihkonen Sami; Palaci...
International Workshop on Nitride Semiconductors/2018-11-11--2018-11-16 - Demonstration of beta-(AlGa)2O3(010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V
Okumura Hironori; Kato Yuji; Ohshima Takayoshi; Palacios ...
2018 International Conference on Solid State Devices and Materials/2018-09-09--2018-09-13 - Nitrogen-face AlN-based field-effect transistors
Okumura Hironori; Lemettinen Jori; Suihkonen Sami; Palaci...
Compound Semiconductor Week 2018/2018-05-29--2018-06-01 - AlN metal-semiconductor field-effect transistors using Si-ion implantation
Okumura Hironori
The 2017 MRS Fall Meeting & Exhibit/2017-11-26--2017-12-01 - AIN metal-semiconductor field-effect transistors using Si-ion implantation
Okumura Hironori; Suihkonen Sami; Lemettinen Jori; Ued...
International Conference on Solid State Devices and Materials (SSDM)/2017-09-19--2017-09-22 - Electrical Properties of Si-Ion Implanted AlN
Okumura Hironori; Sami Suihkonen Tomas Palacios
9th International Conference on Nitride Semiconductors/2017-07 - Electrical Properties of Mg-doped GaN with High Acceptor Concentrations
Okumura Hironori; Marco Malinverni Denis Martin Nicolas...
2016 Materials Research Societies Fall meeting/2016-12 - Highly p-type GaN for Advanced Optoelectronic Devices
Okumura Hironori; Malinverni Marco; Martin Denis; Grandje...
2016 IEEE Photonics Conference/2016-10 - Electrical Properties of Mg-doped GaN with High Acceptor Concentrations
Okumura Hironori; Marco Malinverni Denis Martin Nicolas...
19th International Conference on Molecular Beam Epitaxy/2016-09
- Si doping of alpha-Al2O3 grown by molecular beam epitaxy
- Intellectural property rights
- (特開2023-058917)半導体、トランジスタおよび半導体の製造方法
奥村 宏典 - (特開2022-84473)導電性AlNエピタキシャル膜付き基板及びその製造方法
奥村 宏典; 柴田 智彦; 渡邊 康弘
- (特開2023-058917)半導体、トランジスタおよび半導体の製造方法
- Teaching
2024-10 -- 2025-02 Research in Applied Physics IVA University of Tsukuba. 2024-10 -- 2025-02 Research in Applied Physics IIIA University of Tsukuba. 2024-04 -- 2024-08 Research in Applied Physics VB University of Tsukuba. 2024-12 -- 2025-02 Linear Algebra 3 University of Tsukuba. 2024-10 -- 2025-02 Research in Applied Physics IA University of Tsukuba. 2024-04 -- 2024-08 Research in Applied Physics IIIB University of Tsukuba. 2024-04 -- 2024-08 Research in Applied Physics IIB University of Tsukuba. 2024-10 -- 2025-02 Research in Applied Physics VB University of Tsukuba. 2024-10 -- 2025-02 Research in Applied Physics IVB University of Tsukuba. 2024-10 -- 2025-02 Research in Applied Physics VA University of Tsukuba. more... - Other educational activities
2020-08 -- 2020-08 ナノテクノロジープラットフォーム学生研修プログラム(GaN HEMTの作製) 筑波大学 2019-05 -- (current) フレッシュマンセミナー体験配属(リソグラフィ) 筑波大学 2019-08 -- (current) 応用理工サマースクール体験実験(Ga2O3結晶成長、GaN LED作製) 筑波大学 2018-07 -- 2018-07 電子工学特別講義 非常勤講師 大阪大学 2018-04 -- 2020-03 応用理工学類クラス担任 筑波大学 - Talks
- Power electronics (Ga2O3) device
OKUMURA Hironori
Baja-Tsukuba Collaborative Seminar/2024-10-11 - Development of low-cost power devices using Al2O3
OKUMURA Hironori
Innovation for Cool Earth Forum/2024-10-09 - Development of novel materials for high efficiency and low-cost power electronics
OKUMURA Hironori
Tsukuba Global Science Week/2024/10/3 - GaNプロセスの現状と放射線検出器の作製
奥村 宏典
Platform B (Silicon) meeting/2024-09-05 - 厳環境におけるワイドギャップ半導体の利用可能性
奥村 宏典
名古屋大CIRFEセミナー/2024-03-04 - 酸化アルミニウムガリウムの電気伝導制御
奥村 宏典
TREMS成果報告会/2024-02-28 - 極限環境で動作する半導体デバイス
奥村 宏典
筑波大Tristar共創リレーセミナー/2023-12-20 - 世界初の導電性サファイア(酸化アルミニウム)実現
奥村 宏典
Innovation Leaders Summit/2023-12-04--2023-12-07 - 高温・高放射線耐性に向けた半導体の結晶成長と素子特性
奥村 宏典
数理物質系学際セミナー/2023-10-20 - Special session with University Presidents and Future Shapers
Okumura Hironori
Tsukuba conference/2023-09-28 - Growth and electrical property of α-(AlGa)2O3
Okumura Hironori
J-FAST workshop/2023-09-27 - Future of materials science contributing to the carbon neutrality
Okumura Hironori
Tsukuba Conference/2023-09-27 - 窒化ガリウムを用いた放射線検出器
奥村 宏典
TREMS成果報告会/2023-02-28 - 導電性サファイヤの開発
奥村 宏典
Innovation Japan 2022/2022-10-04--2022-10-31 - Alpha- and beta-(AlGa)2O3 growth using Molecular Beam Epitaxy
Okumura Hironori
J-FAST kick-off meeting/2022-06-22--2022-06-24 - 窒化アルミニウム層中の不純物拡散
奥村 宏典
TREMS成果報告会/2021-03-11 - 高放射線耐性半導体を用いた重粒子線検出器の研究
奥村 宏典; 井村 将隆; 外川 学; 西永 慈郎; 宮原 正也
TIAナノエレの若手の会セミナー/2022-03-08 - Semiconductor devices in extreme environment
奥村 宏典
Researcher Matching Project 2021With Matching HUB Hokuriku/2021-11-05--2021-11-17 - ナノスケール加工に向けた電子線露光実習
奥村 宏典
微細加工技術 実践セミナー/2020-10-07 - 放射線耐性に優れた半導体素子の開発
奥村 宏典
JST新技術説明会/2020-10-04 - 酸化ガリウムの結晶成長と電子デバイスの作製
奥村 宏典
TREMS成果報告会/2020-03-11 - AlN結晶へのイオン注入
奥村 宏典
第162委員会 第116回研究会/2019-12-13--2019-12-14 - 電子ビーム露光装置を用いたGa2O3 FinFETとAlN光導波路の作製
奥村 宏典
電子ビームリソグラフィセミナーV/2019-11-27 - 放射線に負けないデバイスを使ってみよう!
奥村 宏典; 西永慈郎; 井村将隆; 外川学; 宮原正也
イノベーション・ジャパン2019-大学見本市/2019-08-29--2019-08-30 - 超ワイドバンドギャップ半導体を用いたトランジスタ動作
奥村 宏典
NTT 物性科学基礎研究所 セミナー/2019-07-19--2019-07-19 - more...
- Power electronics (Ga2O3) device
- Professional activities
2021-04 -- 2022-11 International Workshop on Gallium Oxide and Related Materials Program Committee 2020-03 -- 2022-02 Electronic Materials Symposium Secretaries 2020-01 -- 2022-12 International Conference on Solid State Devices and Materials Program Committee, Area 4 - University Management
2024-04 -- 2026-03 広報委員会 運営委員 2023-04 -- 2025-03 サマースクール/スプリングスクール 運営委員 2020-04 -- 2022-03 スポーツデー運営委員会 運営委員 2018-06 -- (current) Nano-tech Platform in the university of Tsukuba Steering Committee 2018-04 -- (current) Tsukuba Research Center for Energy Materials Science Member - Other activities
2022-08 -- 2025-03 Top Runners in Strategy of Transborder Advanced Researches (TRiSTAR), Fellow 2018-08 -- 2019-12 free English chat room (BiVi Tsukuba satellite office), Organizer 2018-04 -- 2019-03 MEXT NISTEP, Science and Technology Foresight Center, Investigator
(Last updated: 2024-10-01)