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Okumura Hironori

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Affiliation
Faculty of Pure and Applied Sciences
Official title
Assistant Professor
ORCID
0000-0002-5464-9169
KAKEN ID
80756750
URL
Research fields
Electronic materials/Electric materials
Crystal engineering
Thin film/Surface and interfacial physical properties
Research projects
Normally-off operation of (AlGa)2O3/Ga2O3 HEMTs2020-10 -- 2021-09Hironori OkumuraSamco Science and Technology Foundation/第4回研究助成2,000,000Yen
Development of radiation-tolerance GaN optical detectors2020-06 -- 2021-05Hironori OkumuraThe Murata Science Foundation/第36回研究助成2,250,000Yen
High radiation tolerant detector for radioactive isotope beam2020-04 -- 2021-03imura masatakaTIA program/kakehashi2,800,000Yen
Development of normally-off (AlGa)2O3 MOSFETs2020-04 -- 2021-03Hironori OkumuraThe Asahi Glass Foundation/Research Grant2,000,000Yen
Nitride-based spintronics materials for ultrafast current-induced domain wall motion2019-10 -- 2023-09Takashi SuemasuJapan Society of for the Promotion of Science//Fund for the Promotion of Joint International Research (Fostering Joint International Research (B))18,330,000Yen
Power devices using III-Oxides2019-10 -- 2022-09Hironori OkumuraNEDO/Challenge 2050
Building of Technical Basis for fabrication of high-power AlN devices2019-04 -- 2023-03Hironori OkumuraJapan Society of for the Promotion of Science/Grant-in-Aid for Scientific Research (B)17,160,000Yen
Development of Semiconductor Devices2019-04 -- 2020-03Hironori OkumuraHeadquarters for International Industry-University Collaboration/Research grant2,000,000Yen
Fabrication of Ga2O3 Resonant Tunneling Diodes2018-11 -- 2019-10Takayoshi OshimaCASIO SCIENCE PROMOTION FOUNDATION/36th Research grant1,000,000Yen
Highly stable radiation photodetector based on semiconductors2018-04 -- 2020-03Masataka ImuraTIA program/Kakehashi3,300,000Yen
more...
Career history
2018-04 -- (current)University of Tsukuba Assistant Professor (Tenure)
2016-04 -- 2018-03MIT EECS visiting researcher
2015-04 -- 2016-03EPFL Physics visiting researcher
2015-04 -- 2018-03University of Tsukuba Assistant Professor (Tenure Track)
2014-04 -- 2015-03NTT Basic research laboratory Post-doc
2012-04 -- 2014-03UCSB Materials Post-doc (JSPS fellowship)
Academic background
2007-04 -- 2012-03Kyoto University Electrical and Electronics EngineeringCompleted
2003-04 -- 2007-03Kyoto University Electrical and Electronics EngineeringGraduated
Degree
2012-03Ph.D, engineeringKyoto University
Licenses and qualifications
2014-10Specified high pressure gas handling supervisor
Academic societies
2019-12 -- (current)Japanese Society of Applied Physics
2019-12 -- (current)Japanese Association for Crystal Growth
2016-12 -- 2018-12Material Research Society
Honors & Awards
2019-09-03SSDM Young Researcher Award
Articles
Books
Conference, etc.
  • (AlGa)2O3/Ga2O3 resonant tunneling diodes
    Okumura Hironori
    Compound Semiconductor Week 2020/2020-05-17--2020-05-21
  • Demonstration of m-plane GaN MOSFETs
    Okumura Hironori
    2019 International Conference on Solid State Devices and Materials/2019-09-02--2019-09-05
  • Demonstration of (AlGa)2O3-channel MOSFETs
    Okumura Hironori
    2019 International Workshop on Gallium Oxide and related materials/2019-08-12--2019-08-15
  • N-polar AlN POLFET
    Okumura Hironori; Lemettinen Jori; Suihkonen Sami; Palaci...
    International Workshop on Nitride Semiconductors/2018-11-11--2018-11-16
  • Demonstration of beta-(AlGa)2O3(010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V
    Okumura Hironori; Kato Yuji; Ohshima Takayoshi; Palacios ...
    2018 International Conference on Solid State Devices and Materials/2018-09-09--2018-09-13
  • Nitrogen-face AlN-based field-effect transistors
    Okumura Hironori; Lemettinen Jori; Suihkonen Sami; Palaci...
    Compound Semiconductor Week 2018/2018-05-29--2018-06-01
  • AlN metal-semiconductor field-effect transistors using Si-ion implantation
    Okumura Hironori
    The 2017 MRS Fall Meeting & Exhibit/2017-11-26--2017-12-01
  • AIN metal-semiconductor field-effect transistors using Si-ion implantation
    Okumura Hironori; Suihkonen Sami; Lemettinen Jori; Uedono...
    International Conference on Solid State Devices and Materials (SSDM)/2017-09-19--2017-09-22
  • Electrical Properties of Si-Ion Implanted AlN
    Okumura Hironori; Sami Suihkonen Tomas Palacios
    9th International Conference on Nitride Semiconductors/2017-07
  • Electrical Properties of Mg-doped GaN with High Acceptor Concentrations
    Okumura Hironori; Marco Malinverni Denis Martin Nicolas G...
    2016 Materials Research Societies Fall meeting/2016-12
  • Highly p-type GaN for Advanced Optoelectronic Devices
    Okumura Hironori; Malinverni Marco; Martin Denis; Grandje...
    2016 IEEE Photonics Conference/2016-10
  • Electrical Properties of Mg-doped GaN with High Acceptor Concentrations
    Okumura Hironori; Marco Malinverni Denis Martin Nicolas G...
    19th International Conference on Molecular Beam Epitaxy/2016-09
Teaching
2018-10 -- (current)Widegap semiconductorsUniversity of Tsukuba.
2018-10 -- (current)Solid State Physics BUniversity of Tsukuba.
2018-04 -- 2018-06Freshmen SeminarUniversity of Tsukuba.
Other educational activities
2020-08 -- 2020-08ナノテクノロジープラットフォーム学生研修プログラム（GaN HEMTの作製）筑波大学
2019-05 -- (current)フレッシュマンセミナー体験配属（半導体デバイスの作製）筑波大学
2019-08 -- (current)応用理工サマースクール体験実験（SiC SBDの作製）筑波大学　
2018-07 -- 2018-07電子工学特別講義　非常勤講師大阪大学
2018-04 -- 2020-03応用理工学類クラス担任筑波大学
Talks
  • 酸化ガリウムの結晶成長と電子デバイスの作製
    奥村 宏典
    TREMS成果報告会/2020-03-11
  • AlN結晶へのイオン注入
    奥村 宏典
    第162委員会 第116回研究会/2019-12-13--2019-12-14
  • 電子ビーム露光装置を用いたGa2O3 FinFETとAlN光導波路の作製
    奥村 宏典
    電子ビームリソグラフィセミナーV/2019-11-27
  • 放射線に負けないデバイスを使ってみよう！
    奥村 宏典; 西永慈郎; 井村将隆; 外川学; 宮原正也
    イノベーション・ジャパン2019－大学見本市/2019-08-29--2019-08-30
  • 超ワイドバンドギャップ半導体を用いたトランジスタ動作
    奥村 宏典
    NTT 物性科学基礎研究所　セミナー/2019-07-19--2019-07-19
  • 窒化アルミニウムおよび酸化ガリウムの結晶成長からトランジスタ作製まで
    奥村 宏典
    2019年度 第3回エネルギーマネージメント・材料デバイス技術分科会/2019-07-19--2019-07-19
  • Crystal growth and devices for wide band-gap semiconductors over 5 eV
    Okumura Hironori
    Ohio State Univeristy, Seminar/2019-03-18--2019-03-18
  • 省エネに向けた新規パワーデバイス材料に関する研究
    奥村 宏典
    産学連携シンポジウム/2019-03-15--2019-03-15
  • 新規パワーデバイス用材料に関する研究
    奥村 宏典
    Nanotech expo 2019/2019-01-30--2019-02-01
  • High-power devices using ultra wide bandgap semiconductors
    Okumura Hironori
    University of California, Santa Barbara, Seminar/2018-03-20--2018-3-20
  • これまでの半導体とこれからの半導体
    奥村 宏典
    ボストン日本人研究者交流会/2018-03-17--2018-03-17
  • 高濃度Mgドーピングによるp型GaN層の接触抵抗の低減
    奥村 宏典
    筑波大学数理物質系　専攻セミナー/2016-04-01--2016-04-01
  • 垂直共振器面発光レーザー応用に向けたGaN層のトンネル接合
    奥村 宏典
    東京大学生産技術研究所　セミナー/2016-03-30--2016-03-30
  • 高濃度 Mg ドーピングを行った p 型 GaN 層の低い接触抵抗
    奥村 宏典
    京都大学大学院工学研究科　セミナー/2016-03-29--2016-03-29
  • P-Type Doping Control of Mg-doped AlGaN for deep-UV LEDs
    Okumura Hironori; Yoshitaka Taniyasu; Hideki Yamamoto
    Aalto University seminer/2015-09-14--2015-09-14
  • New Devices using Wide-Bandgap Semiconductors
    Okumura Hironori
    3rd Meeting of Japanese young scientists in EU/2015-08-29--2015-08-29
  • AlGaN growth using PAMBE and MOVPE
    Okumura Hironori
    EPFL seminar/2015-04-15
Professional activities
2020-03 -- 2022-02Electronic Materials SymposiumProgram Committee
2020-01 -- 2020-12international conference on Solid State Devices and MaterialsProgram Committee, Area 4
University Management
2020-04 -- 2022-03スポーツデー運営委員会運営委員
2018-06 -- (current)Nano-tech Platform in the university of TsukubaSteering Committee
2018-04 -- (current)Tsukuba Research Center for Energy Materials ScienceMember
Other activities
2018-08 -- 2019-12free English chat room (BiVi Tsukuba satellite office), Organizer
2018-04 -- 2019-03MEXT NISTEP, Science and Technology Foresight Center, Investigator

(Last updated: 2020-07-27)