Mannequin Cedric Romuald

Affiliation

Faculty of Pure and Applied Sciences

Official title

Assistant Professor

Research fields

Applied materials

Electronic materials/Electric materials

Material processing/Microstructural control engineering

Plasma electronics

Nanomaterials engineering

Thin film/Surface and interfacial physical properties

Research keywords

Atomic Layer Etching

Cold Plasma (ICP, CCP)

Diamond

Ga2O3

III-V (GaN, AlGaN, InGaN)

Wide Band Gap Semiconductors

Metal Oxides

Resistive memory

Research projects

Atomic Layer Etching (ALE) of wide band gap materials for development of novel semiconductor devices	2017-07 -- (current)	Cedric Mannequin	University of Tsukuba/Industry-academia collaboration promotion project	750,000Yen
Atomic layer etching of wide band gap materials for development of novel semiconductor devices	2018-07 -- (current)	Cedric Mannequin	University of Tsukuba/Industry-academia collaboration promotion project	350,000Yen
Development ofβ-Ga2O3 MESFETs for Ultra-High Frequency Applications	2020-04 -- 2021-03	Cedric Mannequin	TIA連携プログラム/TIA連携プログラム探索推進事業「かけはし」	6,000,000Yen
β-Ga2O3の高品質エピ開発と応用展開調査	2018-04 -- 2019-03	立木 実	TIA連携プログラム/2018 TIA連携プログラム探索推進事業「かけはし」	2,000,000Yen
Ga2O3による紫外域から可視域での光応用素子の調査	2019-04 -- 2020-03	渡邊　幸志	Tsukuba Innovative Area/30年度TIA連携プログラム探索推進事業「かけはし」	2,000,000Yen

Career history

2014-06 -- 2016-05

National Institute for Materials Science Postdoc

Academic background

2004-09 -- 2007-07	Lycee Jacques Amiot Classes Preparatoires- Specialite Physique-Chimie	Completed
2007-09 -- 2010-09	Polytech Grenoble Materials Engineering	Graduated
2010-10 -- 2014-02	University Grenoble Alps Doctoral School pf Physics	Graduated

Degree

2014-02	PhD Physics/Materials Physics	University Grenoble Alps
2010-09	Master of engineering Materials science	Polytech Grenoble- University Grenoble Alps

Academic societies

2014-06 -- 2020-06

Japanese Society of Applied Physics

Refereed academic journal/Refereed international conference paper

• Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
  Traore Aboulaye; Gouveia Maria; Okumura Hironori; Mannequ...
  Japanese Journal of Applied Physics/60/pp.SBBD15-SBBD15-4, 2021-02
• Impact of Film Morphology on the Switching Characteristics of Ta2O5-Based Atomic Switches
  Mannequin Cedric Romuald
  2015 International Conference on Solid State Devices and Materials, 2015-09
• Comparing the switching characteristics of two resistive RAM technologies: Cu-SiO2 conductive-bridging-RAMs and HfO2 Oxide-RAMs
  Mannequin Cedric Romuald
  2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010-12
• A fully passive RF switch based on nanometric conductive bridge
  Mannequin Cedric Romuald
  2012 IEEE/MTT-S International Microwave Symposium Digest, 2012-08
• New fluorocarbon free chemistry proposed as solution to limit porous SiOCH film modification during etching
  Mannequin Cedric Romuald
  2013 IEEE International Interconnect Technology Conference - IITC, 2013-09
• (Invited) Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories
  Mannequin Cedric Romuald
  ECS Transactions/67(1)/p.1, 2015-04
• Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction
  Mannequin Cedric Romuald
  JOURNAL OF APPLIED PHYSICS/116(8), 2014-08
• Stochastic domain-wall depinning under current in FePt spin valves and single layers
  Mannequin Cedric Romuald
  PHYSICAL REVIEW B/84(1), 2011-07
• Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices
  Mannequin Cedric Romuald
  JOURNAL OF APPLIED PHYSICS/110(10), 2011-11
• Resistive switching of HfO2-based Metal-Insulator-Metal diodes: Impact of the top electrode material
  Mannequin Cedric Romuald
  THIN SOLID FILMS/520(14)/pp.4551-4555, 2012-05
• Stress-induced leakage current and trap generation in HfO2 thin films
  Mannequin Cedric Romuald
  JOURNAL OF APPLIED PHYSICS/112(7), 2012-10
• Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications
  Mannequin Cedric Romuald
  Thin Solid Films/525/pp.20-27, 2012-12
• Change in Admittance of HfO2 Metal-Insulator-Metal (MIM) Capacitors after dc Bias Stress
  Mannequin Cedric Romuald
  ECS SOLID STATE LETTERS/2(5)/pp.N15-N17, 2013-05
• Resistive switching in metal-oxide-metal devices: fundamental understanding in relation to material characterization
  Mannequin Cedric Romuald
  IEEE Bipolar BiCMOS Circuits and Technology Meeting/pp.151-158, 2013-10
• Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements
  Mannequin Cedric Romuald
  PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS/8(7)/pp.634-638, 2014-07
• Investigation of electrical properties of HfO2 metal-insulator-metal (MIM) devices
  Mannequin Cedric Romuald
  APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING/116(4)/pp.1647-1653, 2014-09
• Mechanisms of Resistance Switching in Nanometric Metal Oxides and Their Dependence on Electrodes
  Mannequin Cedric Romuald
  2015 IEEE 11TH INTERNATIONAL CONFERENCE ON THE PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS/pp.56-59, 2015-07
• Mechanism for Conducting Filament Growth in Self-Assembled Polymer Thin Films for Redox-Based Atomic Switches
  Mannequin Cedric Romuald
  ADVANCED MATERIALS/28/pp.640-648, 2016-01
• From MEMRISTOR to MEMImpedance device
  Mannequin Cedric Romuald
  Applied Physics Letters/108(5), 2016-02
• On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)
  Mannequin Cedric Romuald
  Journal of Applied Physics/119(11), 2016-03
• Reliability of HfO2 metal-insulator-metal capacitors under AC stress
  Mannequin Cedric Romuald
  JOURNAL OF PHYSICS D-APPLIED PHYSICS/49(16), 2016-04
• Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure
  Mannequin Cedric Romuald
  JAPANESE JOURNAL OF APPLIED PHYSICS/55(6), 2016-06
• Composition of thin Ta2O5 films deposited by different methods and the effect of humidity on their resistive switching behavior
  Mannequin Cedric Romuald
  JAPANESE JOURNAL OF APPLIED PHYSICS/55(6), 2016-06
• Graphene-HfO2-based resistive RAM memories
  Mannequin Cedric Romuald
  MICROELECTRONIC ENGINEERING/161/pp.82-86, 2016-08
• Identification and roles of nonstoichiometric oxygen in amorphous Ta2O5 thin films deposited by electron beam and sputtering processes
  Mannequin Cedric Romuald
  APPLIED SURFACE SCIENCE/385/p.426, 2016-11

more...

Other articles

• Plasma treatment of HfO2-based metal-insulator-metal resistive memories
  Mannequin Cedric Romuald
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A/29(4), 2011-07

Conference, etc.

• Photo-induced Conductivity Transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
  Traore Aboulaye; Gouveia Maria; Hironori Okumura; Mannequ...
  2020 International Conference on Solid State Devices and Materials SSDM 2020/2020-09-27--2020-09-30
• Study of β − Ga2O3 Dry-Etching
  Mannequin Cedric Romuald
  JSAP S

Teaching

2021-10 -- 2021-12	Technical English 2	University of Tsukuba.
2020-05 -- 2020-08	Technical English B	University of Tsukuba
2019-04 -- 2019-08	Technical English B	University of Tsukuba.
2018-04 -- 2018-05	Technical English B	University of Tsukuba
2017-04 -- 2017-08	Technical English B	University of Tsukuba

(Last updated: 2020-05-29)