Mannequin Cedric Romuald
- Affiliation
- Faculty of Pure and Applied Sciences
- Official title
- Assistant Professor
- Research fields
Applied materials Electronic materials/Electric materials Material processing/Microstructural control engineering Plasma electronics Nanomaterials engineering Thin film/Surface and interfacial physical properties - Research keywords
Atomic Layer Etching Cold Plasma (ICP, CCP) Diamond Ga2O3 III-V (GaN, AlGaN, InGaN) Wide Band Gap Semiconductors Metal Oxides Resistive memory - Research projects
Atomic Layer Etching (ALE) of wide band gap materials for development of novel semiconductor devices 2017-07 -- (current) Cedric Mannequin University of Tsukuba/Industry-academia collaboration promotion project 750,000Yen Atomic layer etching of wide band gap materials for development of novel semiconductor devices 2018-07 -- (current) Cedric Mannequin University of Tsukuba/Industry-academia collaboration promotion project 350,000Yen Development ofβ-Ga2O3 MESFETs for Ultra-High Frequency Applications 2020-04 -- 2021-03 Cedric Mannequin TIA連携プログラム/TIA連携プログラム探索推進事業「かけはし」 6,000,000Yen β-Ga2O3の高品質エピ開発と応用展開調査 2018-04 -- 2019-03 立木 実 TIA連携プログラム/2018 TIA連携プログラム探索推進事業「かけはし」 2,000,000Yen Ga2O3による紫外域から可視域での光応用素子の調査 2019-04 -- 2020-03 渡邊 幸志 Tsukuba Innovative Area/30年度TIA連携プログラム探索推進事業「かけはし」 2,000,000Yen - Career history
2014-06 -- 2016-05 National Institute for Materials SciencePostdoc - Academic background
2004-09 -- 2007-07 Lycee Jacques Amiot Classes Preparatoires- Specialite Physique-Chimie 2007-09 -- 2010-09 Polytech Grenoble Materials Engineering 2010-10 -- 2014-02 University Grenoble Alps Doctoral School pf Physics - Degree
2014-02 PhD Physics/Materials Physics University Grenoble Alps 2010-09 Master of engineering Materials science Polytech Grenoble- University Grenoble Alps - Academic societies
2014-06 -- 2020-06 Japanese Society of Applied Physics - Articles
- Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
Traore Aboulaye; Gouveia Maria; Okumura Hironori; Mannequ...
Japanese Journal of Applied Physics/60/pp.SBBD15-SBBD15-4, 2021-02 - Impact of Film Morphology on the Switching Characteristics of Ta2O5-Based Atomic Switches
Mannequin Cedric Romuald
2015 International Conference on Solid State Devices and Materials, 2015-09 - Comparing the switching characteristics of two resistive RAM technologies: Cu-SiO2 conductive-bridging-RAMs and HfO2 Oxide-RAMs
Mannequin Cedric Romuald
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010-12 - A fully passive RF switch based on nanometric conductive bridge
Mannequin Cedric Romuald
2012 IEEE/MTT-S International Microwave Symposium Digest, 2012-08 - New fluorocarbon free chemistry proposed as solution to limit porous SiOCH film modification during etching
Mannequin Cedric Romuald
2013 IEEE International Interconnect Technology Conference - IITC, 2013-09 - (Invited) Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories
Mannequin Cedric Romuald
ECS Transactions/67(1)/p.1, 2015-04 - Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction
Mannequin Cedric Romuald
JOURNAL OF APPLIED PHYSICS/116(8), 2014-08 - Plasma treatment of HfO2-based metal-insulator-metal resistive memories
Mannequin Cedric Romuald
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A/29(4), 2011-07 - Stochastic domain-wall depinning under current in FePt spin valves and single layers
Mannequin Cedric Romuald
PHYSICAL REVIEW B/84(1), 2011-07 - Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices
Mannequin Cedric Romuald
JOURNAL OF APPLIED PHYSICS/110(10), 2011-11 - Resistive switching of HfO2-based Metal-Insulator-Metal diodes: Impact of the top electrode material
Mannequin Cedric Romuald
THIN SOLID FILMS/520(14)/pp.4551-4555, 2012-05 - Stress-induced leakage current and trap generation in HfO2 thin films
Mannequin Cedric Romuald
JOURNAL OF APPLIED PHYSICS/112(7), 2012-10 - Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications
Mannequin Cedric Romuald
Thin Solid Films/525/pp.20-27, 2012-12 - Change in Admittance of HfO2 Metal-Insulator-Metal (MIM) Capacitors after dc Bias Stress
Mannequin Cedric Romuald
ECS SOLID STATE LETTERS/2(5)/pp.N15-N17, 2013-05 - Resistive switching in metal-oxide-metal devices: fundamental understanding in relation to material characterization
Mannequin Cedric Romuald
IEEE Bipolar BiCMOS Circuits and Technology Meeting/pp.151-158, 2013-10 - Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance-voltage measurements
Mannequin Cedric Romuald
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS/8(7)/pp.634-638, 2014-07 - Investigation of electrical properties of HfO2 metal-insulator-metal (MIM) devices
Mannequin Cedric Romuald
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING/116(4)/pp.1647-1653, 2014-09 - Mechanisms of Resistance Switching in Nanometric Metal Oxides and Their Dependence on Electrodes
Mannequin Cedric Romuald
2015 IEEE 11TH INTERNATIONAL CONFERENCE ON THE PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS/pp.56-59, 2015-07 - Mechanism for Conducting Filament Growth in Self-Assembled Polymer Thin Films for Redox-Based Atomic Switches
Mannequin Cedric Romuald
ADVANCED MATERIALS/28/pp.640-648, 2016-01 - From MEMRISTOR to MEMImpedance device
Mannequin Cedric Romuald
Applied Physics Letters/108(5), 2016-02 - On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)
Mannequin Cedric Romuald
Journal of Applied Physics/119(11), 2016-03 - Reliability of HfO2 metal-insulator-metal capacitors under AC stress
Mannequin Cedric Romuald
JOURNAL OF PHYSICS D-APPLIED PHYSICS/49(16), 2016-04 - Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure
Mannequin Cedric Romuald
JAPANESE JOURNAL OF APPLIED PHYSICS/55(6), 2016-06 - Composition of thin Ta2O5 films deposited by different methods and the effect of humidity on their resistive switching behavior
Mannequin Cedric Romuald
JAPANESE JOURNAL OF APPLIED PHYSICS/55(6), 2016-06 - Graphene-HfO2-based resistive RAM memories
Mannequin Cedric Romuald
MICROELECTRONIC ENGINEERING/161/pp.82-86, 2016-08 - more...
- Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
- Conference, etc.
- Photo-induced Conductivity Transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
Traore Aboulaye; Gouveia Maria; Hironori Okumura; Mannequ...
2020 International Conference on Solid State Devices and Materials SSDM 2020/2020-09-27--2020-09-30 - Study of β − Ga2O3 Dry-Etching
Mannequin Cedric Romuald
JSAP S
- Photo-induced Conductivity Transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
- Teaching
2021-10 -- 2021-12 Technical English 2 University of Tsukuba. 2020-05 -- 2020-08 Technical English B University of Tsukuba 2019-04 -- 2019-08 Technical English B University of Tsukuba. 2018-04 -- 2018-05 Technical English B University of Tsukuba 2017-04 -- 2017-08 Technical English B University of Tsukuba
(Last updated: 2020-05-29)