Sasaki Masahiro
- Articles
- HAS measurement on Pd(110) surface during Hydrogen absorption
生津 達也; 庄司 陸人; 前田 拓郎; 冨永 正人; 宮城 良世; 山田 洋一; 佐々木 正洋
Abstract of annual meeting of the Surface Science of Japan/36(0)/p.291, 2016 - Field emission from a C60 molecule adsorbed on a tip apex
安達 学; 西山 裕二; 麻薙 健; 明神 拓真; 山田 洋一; 佐々木 正洋
Abstract of annual meeting of the Surface Science of Japan/36(0)/p.288, 2016 - modulation of electrical structure and conduction by adsorption of acceptor molecule and donor atom on Si(111)-(7x3)-In surface
角 直也; 長谷川 友里; 山田 洋一; 佐々木 正洋; 吉澤 俊介; 内橋 隆
Abstract of annual meeting of the Surface Science of Japan/36(0)/p.350, 2016 - Perpendicular magnetic anisotropy of Co nanoparticles on single layer h-BN
渡邉 貴弘; 山田 洋一; 佐々木 正洋; 小出 明広; 圓谷 志郎; 境 誠司
Abstract of annual meeting of the Surface Science of Japan/36(0)/p.397, 2016 - Field Emission from Carbon Films with No Protrusions with High Aspect Ratios
堀江 翔太; 麻薙 健; 明神 拓真; 樋口 敏春; 山田 洋一; 佐々木 正洋
Journal of the Vacuum Society of Japan/60(1)/pp.13-17, 2017 - On the Mechanism of Enhancement on Field Emission Properties for Carbon-Coated Field Emitters
樋口 敏春; 佐々木 正洋; 堀江 翔太; 山田 洋一; 松本 修二; 福田 茂樹
IEICE technical report. Electron devices/114(262)/pp.1-6, 2014-10 - On the mechanism of improvement of field emission properties of carbon-coated field emitters
Higuchi Toshiharu; Sasaki Masahiro; Horie Shota; Yamad...
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B/33(3), 2015-05 - One-Dimensional Nanotemplate Structure of a Si(110) Substrate
Yokoyama Yuta; Asaoka Hidehito; Sinsarp Asawin; Sasaki...
e-J. Surf. Sci. Nanotech./10(0)/pp.509-512, 2012 - On the Mechanism of Improvement of Field Emission Properties of Carbon Coated Field Emitters
Higuchi Toshiharu; Sasaki Masahiro; Hone Shota; Yamada...
2014 27TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2014 - In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 x 1 surface by supersonic molecular oxygen beams
Yoshigoe Akitaka; Teraoka Yuden; Okada Ryuta; Yamada ...
JOURNAL OF CHEMICAL PHYSICS/141(17), 2014-11 - On the Mechanism of Enhancement on Field Emission Properties for Carbon Coated Field Emitters
樋口 敏春; 佐々木 正洋; 遠藤 俊宏; 堀江 翔太; 山田 洋一; 松本 修二; 福田 茂樹
IEICE technical report. Electron devices/112(303)/pp.1-6, 2012-11 - The determination of the thickness of the silicon oxide by synchrotron x-ray photoelectron spectroscopy (SR-XPS) analysis
Sasaki Masahiro
Measurement Science and Technology/22/p.024007, 2010-12 - Microscopic study of the work function reduction induced by Cs-adsorption Jointly worked
Sinsarp; Y. Yamada; M. Sasaki; S. Yamamoto
Jan. J. Appl. Phys/pp.42(7)4882-4886, 2003-01 - UV absorption spectra of adlayers of trimethylgallium and arsine (共著)
佐々木 正洋
Japanese Journal of Applied Physics/28/p.L131, 1989-01 - UV absorption spectra of adllayers of MOCVD source gases (共著)
佐々木 正洋
Applied Surface Science/41,42/p.42/,342, 1989-01 - GaAs atomic layer epitaxy using KrF excimer laser (共著)
佐々木 正洋
Japanese Journal of Applied Physics/28/p.L1439, 1989-01 - KrF eximer laser irradiation effect of GaAs atomic layer epitaxy (共著)
Hironori Ishikawa; Yoshito Kawakyu; Masahiro Sasaki; and ...
Japanese Journal of Applied Physics/28/p.L2327-L2329, 1989-01 - Thermal decomposition of trimethylgallium on variously reconstructed GaAs (111) B surfaces (共著)
佐々木 正洋
Applied Physics Letters/59/p.2538, 1991-01 - Large difference in the decomposition rate of metalorganics between on As-and Ga-saturated GaAs (111) B surfaces (共著)
佐々木 正洋
Journal of Crystal Growth/115/p.226, 1991-01 - In-situ selective area epitaxy of a GaAs-based heterostructure using a GaAs oxide layer as a mask (共著)
佐々木 正洋
Journal of Crystal Growth/115/p.74, 1991-01 - Trimethylgallium reaction on As-stabilized and Ga-stabilized GaAs (100) surfaces (共著)
佐々木 正洋
Japanese Journal of Applied Physics/31/p.L1313, 1992-01 - Trimethylgallium reaction on variously prepared GaAs (100) surfaces studied by mass spectrometry (共著)
佐々木 正洋
Applied Surface Science/60161/p.240, 1992-01 - Stoichiometry- and bond-structure-dependent decomposition of trimethylgallium on As-rich GaAs (100) surface (共著)
佐々木 正洋
Journal of Vacuum Science and Technology/B10/p.1720, 1992-01 - Temperature-programmed scattering (TPS) study on reactivity difference of GaAs and GaAs oxide surfaces (共著)
佐々木 正洋
Japanese Journal of Applied Physics/32/p.L1458, 1993-01 - Surface reaction mechanism in GaAs atomic layer epitaxy
佐々木 正洋
Journal of Grystal Growth/131/p.61, 1993-01 - more...
- HAS measurement on Pd(110) surface during Hydrogen absorption