SASAKI Masahiro

Researcher's full information

Articles
  • Reaction measurement between carbon-based molecule and H_2 using Supersonic H_2 beam
    生津 達也; 國原 淳; 庄司 陸人; 山田 洋一; 佐々木 正洋
    Abstract of annual meeting of the Surface Science of Japan/35(0)/p.375, 2015
  • Modification of Electronic State of DNTT Monolayer on Au(111) Surface via Verifying the Molecular Arrangement
    長谷川 友里; 細貝 拓也; 若山 裕; K.R. Koswattage; 山田 洋一; 佐々木 正洋
    Abstract of annual meeting of the Surface Science of Japan/35(0)/p.90, 2015
  • HAS measurement on Pd(110) surface during Hydrogen absorption
    生津 達也; 庄司 陸人; 前田 拓郎; 冨永 正人; 宮城 良世; 山田 洋一; 佐々木 正洋
    Abstract of annual meeting of the Surface Science of Japan/36(0)/p.291, 2016
  • Field emission from a C60 molecule adsorbed on a tip apex
    安達 学; 西山 裕二; 麻薙 健; 明神 拓真; 山田 洋一; 佐々木 正洋
    Abstract of annual meeting of the Surface Science of Japan/36(0)/p.288, 2016
  • modulation of electrical structure and conduction by adsorption of acceptor molecule and donor atom on Si(111)-(7x3)-In surface
    角 直也; 長谷川 友里; 山田 洋一; 佐々木 正洋; 吉澤 俊介; 内橋 隆
    Abstract of annual meeting of the Surface Science of Japan/36(0)/p.350, 2016
  • Perpendicular magnetic anisotropy of Co nanoparticles on single layer h-BN
    渡邉 貴弘; 山田 洋一; 佐々木 正洋; 小出 明広; 圓谷 志郎; 境 誠司
    Abstract of annual meeting of the Surface Science of Japan/36(0)/p.397, 2016
  • Field Emission from Carbon Films with No Protrusions with High Aspect Ratios
    堀江 翔太; 麻薙 健; 明神 拓真; 樋口 敏春; 山田 洋一; 佐々木 正洋
    Journal of the Vacuum Society of Japan/60(1)/pp.13-17, 2017
  • On the Mechanism of Enhancement on Field Emission Properties for Carbon-Coated Field Emitters
    樋口 敏春; 佐々木 正洋; 堀江 翔太; 山田 洋一; 松本 修二; 福田 茂樹
    IEICE technical report. Electron devices/114(262)/pp.1-6, 2014-10
  • On the mechanism of improvement of field emission properties of carbon-coated field emitters
    Higuchi Toshiharu; Sasaki Masahiro; Horie Shota; Yamad...
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B/33(3), 2015-05
  • One-Dimensional Nanotemplate Structure of a Si(110) Substrate
    Yokoyama Yuta; Asaoka Hidehito; Sinsarp Asawin; Sasaki...
    e-J. Surf. Sci. Nanotech./10(0)/pp.509-512, 2012
  • On the Mechanism of Improvement of Field Emission Properties of Carbon Coated Field Emitters
    Higuchi Toshiharu; Sasaki Masahiro; Hone Shota; Yamada...
    2014 27TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2014
  • In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 x 1 surface by supersonic molecular oxygen beams
    Yoshigoe Akitaka; Teraoka Yuden; Okada Ryuta; Yamada ...
    JOURNAL OF CHEMICAL PHYSICS/141(17), 2014-11
  • On the Mechanism of Enhancement on Field Emission Properties for Carbon Coated Field Emitters
    樋口 敏春; 佐々木 正洋; 遠藤 俊宏; 堀江 翔太; 山田 洋一; 松本 修二; 福田 茂樹
    IEICE technical report. Electron devices/112(303)/pp.1-6, 2012-11
  • The determination of the thickness of the silicon oxide by synchrotron x-ray photoelectron spectroscopy (SR-XPS) analysis
    Sasaki Masahiro
    Measurement Science and Technology/22/p.024007, 2010-12
  • Microscopic study of the work function reduction induced by Cs-adsorption Jointly worked
    Sinsarp; Y. Yamada; M. Sasaki; S. Yamamoto
    Jan. J. Appl. Phys/pp.42(7)4882-4886, 2003-01
  • UV absorption spectra of adlayers of trimethylgallium and arsine (共著)
    佐々木 正洋
    Japanese Journal of Applied Physics/28/p.L131, 1989-01
  • UV absorption spectra of adllayers of MOCVD source gases (共著)
    佐々木 正洋
    Applied Surface Science/41,42/p.42/,342, 1989-01
  • GaAs atomic layer epitaxy using KrF excimer laser (共著)
    佐々木 正洋
    Japanese Journal of Applied Physics/28/p.L1439, 1989-01
  • KrF eximer laser irradiation effect of GaAs atomic layer epitaxy (共著)
    Hironori Ishikawa; Yoshito Kawakyu; Masahiro Sasaki; and ...
    Japanese Journal of Applied Physics/28/p.L2327-L2329, 1989-01
  • Thermal decomposition of trimethylgallium on variously reconstructed GaAs (111) B surfaces (共著)
    佐々木 正洋
    Applied Physics Letters/59/p.2538, 1991-01
  • Large difference in the decomposition rate of metalorganics between on As-and Ga-saturated GaAs (111) B surfaces (共著)
    佐々木 正洋
    Journal of Crystal Growth/115/p.226, 1991-01
  • In-situ selective area epitaxy of a GaAs-based heterostructure using a GaAs oxide layer as a mask (共著)
    佐々木 正洋
    Journal of Crystal Growth/115/p.74, 1991-01
  • Trimethylgallium reaction on As-stabilized and Ga-stabilized GaAs (100) surfaces (共著)
    佐々木 正洋
    Japanese Journal of Applied Physics/31/p.L1313, 1992-01
  • Trimethylgallium reaction on variously prepared GaAs (100) surfaces studied by mass spectrometry (共著)
    佐々木 正洋
    Applied Surface Science/60161/p.240, 1992-01
  • Stoichiometry- and bond-structure-dependent decomposition of trimethylgallium on As-rich GaAs (100) surface (共著)
    佐々木 正洋
    Journal of Vacuum Science and Technology/B10/p.1720, 1992-01
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