SASAKI Masahiro
- Articles
- Temperature-programmed scattering (TPS) study on reactivity difference of GaAs and GaAs oxide surfaces (共著)
佐々木 正洋
Japanese Journal of Applied Physics/32/p.L1458, 1993-01 - Surface reaction mechanism in GaAs atomic layer epitaxy
佐々木 正洋
Journal of Grystal Growth/131/p.61, 1993-01 - New damage-free patterning method of a GaAs oxide mask and GaAs selective gorwth using the metalorganic molecular beam epitaxy method (共著)
佐々木 正洋
Journal of Crystal Growth/133/p.201, 1993-01 - Mass spectrometric stydy of the reaction of photo-oxidized GaAs with Ga (共著)
佐々木 正洋
Journal of Applied Physics/75/p.4214, 1994-01 - Surface reactivity and stability of Ga-deposited GaAs oxide mask for selective area growth of GaAs (共著)
佐々木 正洋
Journal of Crystal Growth/136/p.241, 1994-01 - Scattering of pulsed trimethylgallium beam from clean and oxidized GaAs surfaces (共著)
佐々木 正洋
Japanese Journal of Applied Physics/33/p.L884, 1994-01 - Stoichiometry-dependent scattering of trimethylgallium from GaAs (100) surface (共著)
佐々木 正洋
Surface Science/315/p.L964, 1994-01 - Pulsed trimethylgallium scattering from As-stabilezed and Ga-stabilized surfaces (共著)
佐々木 正洋
Applied Surface Science/82,83/p.83/,269, 1994-01 - Catalytic decomposition of ammonia gas using aluminium oxide for GaN formation (共著)
佐々木 正洋
Journal of Crystal Growth/135/p.633, 1994-01 - Selective-area epitaxy of GaAs using GaN mask in in-situ process (共著)
佐々木 正洋
Journal of Crystal Growth/136/p.37, 1994-01 - In situ mass spectrometric analysis of surface chemistry in MOMBE growth (共著)
佐々木 正洋
Japanese Journal of Applied Physics/34/p.1113, 1995-01 - Investigation of a GaN surface-structure for the mask of GaAs selective growth using MOMBE (共著)
佐々木 正洋
Applied Surface Science/82,83/p.83/,28, 1995-01 - Reduction of carbon incorporation in the in-situ selective-area epitaxy of GaAs by metalorganic molecular beam epitaxy using tris-dimethlaminoarsine (共著)
佐々木 正洋
Journal of Crystal Growth/150/p.557, 1995-01 - In-situ GaAs selective-area growth on a patterned GaN mask by MOMBE using TDMAAs (共著)
佐々木 正洋
Journal of Crystal Growth/151/p.220, 1995-01 - In-situ AlAs selective-area growth by metalorganic molecular beam epitaxy using dimethylaluminumhydride and tris-dimethylaminoarsine (共著)
佐々木 正洋
Journal of Crystal Growth/152/p.347, 1995-01 - Investigation of Al source materials for in situ AlAs selective-area growth using MOMBE (共著)
佐々木 正洋
Journal of Crystal Growth/156/p.11, 1995-01 - Scattering of pulsed trimethylgallium beam from GaAs (100),-(110),-(111)B surfaces (共著)
佐々木 正洋
Surface Science/356/p.233, 1996-01 - Pulsed trimethylgallium beam scattering from variously reconstructed GaAs surfaces (共著)
佐々木 正洋
Surface Science/357,358/p.358/,863, 1996-01 - In situ selective area growth of GaAs, AlAs and AlGaAs using MOMBE(共著)
佐々木 正洋
Journal of Crystal Growth/164/p.291, 1996-01 - The effect of EB irradiation with and without hot-jet Cl2 on an ultra-thin GaN layer for selective etching(共著)
佐々木 正洋
Applied Surface Science/100-101/p.184, 1996-01 - GaAs表面再構成構造とトリメチルガリウムの表面反応
佐々木 正洋
表面科学/18/p.796-802, 1997-01 - Cubic GaN formation using dimethylhydrazine and etching method(共著)
佐々木 正洋
Solid-State Electronics/41/p.327, 1997-01 - Surface chemistry during metalorganic molecular beam epitaxy studied by pulsed molecular beam scattering
佐々木 正洋
Journal of Crystal Growth/175-176/p.1178, 1997-01 - Surface crystal-structure of a GaN films as an in situ mask using MOMBE
佐々木 正洋
Journal of Crystal Growth/175-176/p.107-111, 1997-01 - Reconstructed-structure-dependent surface reaction in metal-organic molecular beam epitaxy of GaAs
佐々木 正洋
Applied Surface Science/121-122/p.73-79, 1997-01 - more...
- Temperature-programmed scattering (TPS) study on reactivity difference of GaAs and GaAs oxide surfaces (共著)