SHIGEKAWA Hidemi

Researcher's full information

Articles
  • Electronic structure of Si(111)-7×7 phase boundary studied by scanning tunneling microscopy
    重川 秀実
    Appl. Phys. Lett./66(25)/p.3468-3470, 1995-01
  • Surface superstructures of quasi one-dimensional organic conductor(BEDT-TTF)2PF6 crystal studied by scanning tunneling microscopy.
    重川 秀実
    Phys. Rev. B,/52(23)/pp.16361--16364, 1995-01
  • "Core level photoelectron spectroscopy on the lanthanide-induced hydrolysis of DNA. "
    重川 秀実
    Appl. Phys. Lett./68(10)/p.1433-1435, 1996-01
  • "Quenched Si(111)-DAS(dimer-adatom-stacking fault)structures
    重川 秀実
    Surf. Sci. ,/358(357/358)/p.464-467, 1996-01
  • "STM study of Si(111)√3x√3-R30-B surface structural formation by HBO2 Irradiation. "
    重川 秀実
    Appl. Surf. Sci. ,/107/p.63-67, 1996-01
  • Defect-induced Si(100)dimer buckling structures studied by scanning tunneling microscopy.
    重川 秀実
    Surf. Sci. ,/358(357/358)/p.468-471, 1996-01
  • "Phase transition between c(4x2)and p(2x2)structures of the Si(100)surface at 6K caused by the fluctuation of phase boundaries on dimer rows due to dimer flip-flop motion. "
    重川 秀実
    Jpn. J. Appl. Phys. ,/35(8B)/p.L1081-L1084, 1996-01
  • M. Ishida, K. Hata, T. Mori, and H. Shigekawa, "Surface reconstruction formed by ordered missing molecular rows observed on quasi-one-dimensional organic conductor β-(BEDT-TTF)2PF6.
    重川 秀実
    Phys. Rev. B. ,/55(8)/p.6773-6776, 1997-01
  • "Role of corner holes in Si(111)-7x7 structural formation studied by HBO2 irradiation and quenching.
    重川 秀実
    Phys. Rev. B/55(7)/p.5360-5363, 1997-01
  • "Modeling step bunching formed on vicinal GaAs(001)annealed in AsH3 and hydrogen ambient. "
    重川 秀実
    Phys. Rev. B. ,/55(11)/p.7039-7046, 1997-01
  • "How annealing conditions influence the fluctuation of step-edgeds of step bunching on vicinal GaAs(100)formed by annealing in AsH3 and H2 ambient. "
    重川 秀実
    J. Vac. Sci. & Technol. ,, 1997-01
  • Dynamics of phasons ; phase defects formed on dimer rows, and related structural change of the Si(100)surface at 80K studied by scanning tunneling microscopy.
    重川 秀実
    Jpn. J. Appl. Phys. Letts. ,/36(A4)/p.L453, 1997-01
  • Phasons formed on Si(100)dimer rows observed by scanning tunneling microscopy.
    重川 秀実
    Sci. Rep. RITU/A44(1)/p.67-69, 1997-01
  • H. Shigekawa, K. Hata, K. Miyake M. Ishida, and S. Ozawa : "Origin of the symmetric dimers in Si(100)surface. "
    重川 秀実
    Phys. Rev. B,/55(23)/p.15448-15451, 1997-01
  • Surface superstructures fluctuating in a quasi-one-dimensional organic conductor β-(BEDT-TTF)2PF6 observed by scanning tunneling microscopy.
    重川 秀実
    Jpn. J. Appl. Phys. ,/36(6B)/p.3894-3897, 1997-01
  • 走査型プローブ顕微鏡STMからSPMへ
    重川 秀実
    西川治編(分担)、丸善, 1998-01
  • 6KにおけるSi(100)ダイマー間相互作用と位相欠陥のダイナミックス
    重川 秀実
    表面科学/18(12)/p.780-785, 1998-01
  • 重川秀実:走査型プローブ顕微鏡 STMからSPMへ 西川治編(分担)
    重川 秀実
    丸善, 1998-01
  • 三宅晃司、重川秀実 HBO2照射によるSi(111)表面へのB原子吸着
    重川 秀実
    応用物理学会薄膜・表面分科会 News letter/103/p.29-33, 1998-01
  • Self organized network structure appearing in the B/Si(111)-√3x√3phase formatior process studied by scanning tunneling microscopy.
    重川 秀実
    Applied Physics A/A66/p.S1013-S1016, 1998-01
  • Selective Reaction of HBO2 Molecules onto Si(111)-7x7 surface studied by scanning tunneling microscopy.
    重川 秀実
    Appl. Surf. Sci./130-132/p.78-83, 1998-01
  • Giant superstructures formed on graphite surface treated with NaOH solutions studied by scanning tunneling microscopy.
    重川 秀実
    Ultramicroscopy/73/p.185-189, 1998-01
  • Scanning tunneling microscopy on ordered self-assemblies of cyclodextrin inclusion complexes formed by substrate-induced two-dimensional crystal growth.
    重川 秀実
    Jpn. J. Appl. Phys./37(6B)/p.3844-3848, 1998-01
  • Surface dynamics studied by perturbing the surface with the tip of a scanning tunneling microscope-Si(100)at 80K-
    重川 秀実
    Appl. Phys. Lett./73/p.40-43, 1998-01
  • Phase defects on Si(100)surface studied by scanning tunneling microscopy.
    重川 秀実
    Defect and Diffusion Forum/160-161/p.57-64, 1998-01
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