NOMURA Shintaro
- Conference, etc.
- Reduction of electric-field-dependent broadening of photoluminescence linewidth with electron density
M. Yamaguchi; S. Nomura; H. Tamura; and T. Akazaki
Nanophotonics 2010____/2010-05 - 半導体二次元電子系の発光分光
野村晋太郎
____/2010-05 - 高品質GaAs量子井戸発光の電子密度-電場強度二次元マップ
山口真澄; 野村晋太郎; 田村浩之; 赤崎達志
____/2010-05 - Photoluminescence characteristics of ultra-thin silicon-on-insulator at low temperatures
Y. Sakurai; K. Shiraishi; K. Ohmori; K. Yamada; and S. N...
International Symposium on Technology Evolution for Silicon Nano-Electronics____/2010-06 - Collective electron tunneling model in Si-nano dot floating gate MOS structure
M. Muraguchi; Y. Sakurai; Y. Takada; Y. Shigeta; M. Iked...
International Symposium on Technology Evolution for Silicon Nano-Electronics____/2010-06 - Investigation of I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact
Y. Takada; M. Muraguchi; T. Endoh; S. Nomura; K. Shiraishi
International Symposium on Technology Evolution for Silicon Nano-Electronics____/2010-06 - Real-space mapping of quantum-Hall edge channels by a dilution-refrigerator based near-field scanning optical microscope
H. Ito; Y. Shibata; K. Furuya; Y. Ootuka; S. Nomura; S. ...
29th Electronic Materials Symposium____/2010-07 - Spin lifetime of localized electrons in a gated undoped GaAs quantum well at low electron density
Masumi Yamaguchi; Haruki Sanada; Shintaro Nomura; Tetsuom...
30th International Conference on Physics of Semiconductors____/2010-07 - Real-space mapping of compressible and incompressible strips by a near-field scanning optical microscope
H. Ito; Y. Shibata; K. Furuya; Y. Ootuka; S. Nomura; S. ...
30th International Conference on Physics of Semiconductors____/2010-07-25--2010-07-30 - Collective tunneling model between two-dimensional electron gas to Si-nano-dot
M. Muraguchi; Y. Sakurai; Y. Takada; S. Nomura; K. Shira...
30th International Conference on Physics of Semiconductors____/2010-07 - Collective Tunneling Model in Charge Trap Type NVM Cell
M. Muraguchi; Y. Sakurai; Y. Takada; Y. Shigeta; M. Iked...
2010 International Conference on Solid State Devices and Materials____/2010-09 - 低温における極薄SOIの発光特性
櫻井蓉子; 白石賢二; 大毛利健治; 山田啓作; 野村晋太郎
____/2010-09 - 局所磁気観察用 2ch-SQUID 測定系の開発
柴田祐輔; 宍戸将之; 松本哲朗; 柏谷 聡; 野村晋太郎; 高柳英明
____/2010-09 - 近接場局所光照射による量子ホール端状態の観測 その２
伊藤宙陛; 古谷景佑; 柴田祐輔; 大塚洋一; 野村晋太郎; 柏谷聡; 山口真澄; 田村浩之; 赤崎達志
____/2010-09 - 分数量子ホール領域の円偏光発光スペクトルの温度依存性II
野村晋太郎 ; 山口真澄 ; 田村浩之 ; 赤崎達志 ; 平山祥郎 ;
____/2010-09 - ゲートつき非ドープGaAs量子井戸のスピン緩和測定
山口真澄; 眞田治樹; 寒川哲臣; 田村浩之; 赤崎達志; 野村晋太郎
____/2010-09 - ゲート付GaAs-AlGaAs非対称二重量子井戸の蛍光寿命のゲート電圧依存性
宮城浩一; 山口真澄; 田村浩之; 赤崎達志; 野村晋太郎
____/2010-09 - Weak-link Nb nanoSQUIDs fabricated by FIB process
T. Matsumoto; H. Kashiwaya; H. Shibata; A. Yamaguchi; H. ...
23rd International Symposium on Superconductivity____/2010-11 - 複合フェルミオン描像による分数量子ホール効果領域発光の理解
野村晋太郎
____/2010-11 - Circular polarized photoluminescence from fractionally charged excitons in composite fermion sea
S. Nomura; M. Yamaguchi; H. Tamura; T. Akazaki; Y. Hiray...
2010 Workshop on Innovative Devices and Systems____/2010-12 - 複合フェルミオンスピン偏極の光学検出
野村晋太郎; 山口真澄; 田村浩之; 赤崎達志; 平山祥郎
____/2010-12 - Composite Fermion Picture for Photoluminescence in the Fractional Quantum Hall Effect Regime
S. Nomura; M. Yamaguchi; H. Tamura; T. Akazaki; Y. Hiray...
International Symposium on Nanoscale Transport and Technology____/2011-01 - Photoluminescence from Electron-Hole Droplet in Ultra-Thin Silicon-on Insulator at Low Temperatures
Yoko Sakurai; Kenji Shiraishi; Kenji Ohmori; Keisaku Yam...
International Symposium on Nanoscale Transport and Technology____/2011-01 - Gate Voltage Dependence of Lifetime of Photoluminescence From an Asymmetric GaAs-AlGaAs Double Quantum Wells
K. Miyagi; M. Yamaguchi; H. Tamura; T. Akazaki; S. Nomura
International Symposium on Nanoscale Transport and Technology____/2011-01 - Investigation of the Spatial Profile of the Quantum-Hall Edge State by the Photovoltage Mapping Using Near-field Optical Microscopy
H. Ito; K. Furuya; Y. Shibata; Y. Ootuka; S. Kashiwaya; M...
International Symposium on Nanoscale Transport and Technology____/2011-01 - more...
- Reduction of electric-field-dependent broadening of photoluminescence linewidth with electron density