OIGAWA Haruhiro

Researcher's full information

Articles
  • Synchrotron radiation photoemission analysis for(NH4)2Sx-treated GaAs
    Sugahara H; Oshima M; Oigawa H; Shigekawa H; Nannichi Y
    Journal of Applied Physics/69/pp.4345-4349, 1991-01
  • Surface Structure of Selenium-treated GaAs (001) Studied by Field Ion Scanning Tunneling Microscopy
    Shigekawa H; Hashizume T; Oigawa H; Motai K; Mera Y; Nannichi ...
    Applied Physics Letters/59(23)/pp.2986-2988, 1991-01
  • Temperature dependent changes on the sulfur-passivated GaAs (111)A. 100 and (111)B surfaces
    Scimeca T; Muramatsu Y; Oshima M; Oigawa H; Nannichi Y
    Physical Review B/44/pp.12927-12932, 1991-01
  • The Effect of (NH4)2Sx-treatment on the passivation of GaP surface
    Lee J; Wei L; Tanigawa S; Oigawa H; Nannichi Y
    Journal of Applied Physics/69/pp.2877-2879, 1991-01
  • The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
    Lee J; Wei L; Tanigawa S; Oigawa H; Nannichi Y
    Japanese Journal of Applied Physics/30(2A)/pp.L138-L141, 1991-01
  • Evidence for the passivation effect in (NH4)2Sx-treated GaAs observed by Slow positrons
    Lee J; Wei L; Tanigawa S; Oigawa H; Nannichi Y
    Applied Physics Letters/58(11)/pp.1167-1169, 1991-01
  • Bonding States of chemisorbed sulfur atoms on GaAs
    Sugahara H; Oshima M; Klauser R; Oigawa H; Nannichi Y
    Surface Science/242(1)/pp.335-340, 1991-01
  • Surface and interface structures of S-passivated GaAs (111) studied by soft x-ray standing waves
    Sugiyama M; Oshima M; Oigawa H; Nannichi Y; Hashizume H
    Applied Physics Letters/60/pp.3247-3249, 1992-01
  • X-ray standing-wave analysis of the (NH4)2Sx-treated GaAs(111)B surface
    Maeyama S; Sugiyama M; Oshima M; Sugahara H; Oigawa H; Nannichi Y
    Applied Surface Science/60(61)/pp.513-516, 1992-01
  • Interfacial chemistry and stability of sulfur-treated GaAs(111)A, 100 and (111)B
    Scimeca T; Muramatsu Y; Oshima M; Oigawa H; Nannichi Y
    Applied Surface Science/60(61)/pp.256-259, 1992-01
  • Chemistry and structure of GaAs surfaces cleaned by sulfur annealing
    Sugahara H; Oshima M; Oigawa H; Nannichi Y
    Thin Solid Films/220/pp.212-216, 1992-01
  • Heteroepitaxy of Layered Compound Semiconductor GaSe onto GaAs Surfaces for Very Effective Passivation of Nanometer Structures
    Ueno K; Abe H; Saiki K; Koma A; Oigawa H; Nannichi Y
    Surface Science/267/pp.43-46, 1992-01
  • Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy
    Oshima M; Scimeca T; Watanabe Y; Oigawa H; Nannichi Y
    Japanese Journal of Applied Physics/32(1)/pp.518-522, 1993-01
  • Interface structure and chemical bondings in Al/S-passivated GaAs(111)
    Sugiyama M; Maeyama S; Scimeca T; Oshima M; Oigawa H; Nannichi...
    Applied Physics Letters/(63)/pp.2540-2542, 1993-01
  • Combined analysis of overlayer/S/GaAs interfaces with photoemission spectroscopy and X-ray standing wave
    Oshima M; Scimeca T; Sugiyama M; Maeyama S; Oigawa H; Nannichi...
    Applied Surface Science/70(71/)/pp.496-501, 1993-01
  • Surface structures of GaAs passivated by chalcogen atoms
    Shigekawa H; Oigawa H; Miyake K; Aiso Y; Nannichi Y
    Applied Surface Science/75/pp.169-174, 1994-01
  • Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy
    Shigekawa H; Oigawa H; Miyake K; Aiso Y; Nannichi Y; Hashizume...
    Applied Physics Letter/65/pp.607-609, 1994-01
  • Molecular structure of a crystal phase coexisting with K-(BEDT-TTF)2Cu(NCS)2 studied by scanning tunneling microscopy
    Shigekawa H; Oigawa H; Miyake K; Aiso Y; Nannichi Y; Mori T; Sa...
    Physical Review B/50/pp.15427-15430, 1994-01
  • Surface superstructure of quasi-one-dimensional organic conductor β-(BEDT-TTF)2PF6 crystal studied by scanning tunneling microscopy
    Shigekawa H; Miyake K; Ishida M; Hata K; Oigawa H; Nannichi Y; ...
    Physical Review B/52(23)/pp.16361-16364, 1995-01
  • Interaction between Si(100)Surface Dimers and Dynamics of Phase Defects Formed on Dimer Rows at 6K Studied by Scanning Tunneling Microscopy
    重川 秀実; 三宅 晃司; 畠 賢治; 小沢 聡; 大井川 治宏; 吉崎 亮造
    Journal of the Surface Science Society of Japan/18(12)/pp.780-785, 1997-01
  • Formation of one-dimensional Be chains on the GaAs Surface
    Oigawa H; Wassermeier M; Daeweritz L; Ploog K. H.
    International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics/1/pp.173-174, 2000-01
  • Array of Be2 dimers formed on the GaAs(001)-2x3 surface
    Oigawa H; Wassermeier M; Daeweritz L; Ploog K. H.
    2nd Intl. Workshop on Quantum Nonplaner Nanostructures & Nano electronics/2/pp.213-215, 2002-01
  • 光ＳＴＭと半導体キャリアーダイナミックス －ＳＴＭで観る固体の物理－
    重川秀実; 吉田昭二; 寺田康彦; 武内修; 大井川治宏
    固体物理/42(11)/p.795-804, 2007-11
  • Surface Passivation Effect in (NH4)2Sx-treated GaAs Probed by Laser-combined Scanning tunneling Microscopy
    H. Oigawa; Y. Terada; A. Okubo; R. Sasaki; O. Takeuchi; H. Shi...
    The 16th International Colloquium on Scanning Probe Microscopy/16/p.91, 2008-11
  • Atomic force microscopy on microcrystal of III-V compounds grown by current-assisted liquid phase epitaxy
    Oigawa H; Iwata Y; Taninaka A; Takeuchi O; Shigekawa H
    The 17th International Colloquium on Scanning Probe Microscopy/17/p.92, 2009-12
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