UMEDA Takahide

Affiliation
Institute of Pure and Applied Sciences
Official title
Associate Professor
ORCID
0000-0002-2584-4782
URL
Email
C2*"!|I1|(|%&!"I#*@OK2I102(2}|I| I'-V
Office
3F723（工学系F棟723）, RD305（理科系修士D棟305）
Phone
029-853-5330
Fax
029-853-5330
Research keywords
electron spin resonance
semiconductor device
defect
electronics
power electronics
quantum sensing
Research projects
電子的欠陥評価ーDRAMトランジスタの接合リーク電流原因解析2013-04 -- 2014-05梅田享英エルピーダメモリ株式会社/共同研究・受託研究2,500,000Yen
電子的欠陥評価ーDRAMトランジスタの接合リーク電流原因解析2012-10 -- 2013-03梅田享英エルピーダメモリ株式会社/共同研究・受託研究2,500,000Yen
電子的欠陥評価技術ーDRAMトランジスタのリーク電流解析2010-04 -- 2012-09梅田享英エルピーダメモリ株式会社/共同研究・受託研究5,000,000Yen
電子的欠陥評価ーDRAMトランジスタの接合リーク電流原因解析2009-04 -- 2010-03梅田享英エルピーダメモリ株式会社/共同研究・受託研究7,500,000Yen
GaN物性を最大限に発揮させる最適なパワーデバイス構造の確立とその工業的な製造プロセスに繋がる絶縁膜形成技術の研究開発2017 -- 2019清水三聡（独）新エネルギー・産業技術総合開発機構（NEDO）/「低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト／GaNパワーデバイス等の実用化加速技術開発」受託研究
炭化ケイ素中のシリコン空孔欠陥を用いた単一フォトン操作2014 -- 2016大島武Japan Society of for the Promotion of Science/Grant-in-Aid for Scientific Research
炭化ケイ素中のシリコン空孔欠陥を用いた単一フォトン操作2012 -- 2013大島武Japan Society of for the Promotion of Science/Challenging Exploratory Research
ワイドギャップ半導体MOS界面欠陥の正体の横断的解明2017 -- 2019大島武Japan Society of for the Promotion of Science/Grant-in-Aid for Scientific Research (A)
ワイドギャップ半導体MOS界面欠陥の正体の横断的解明2020 -- 2024藤ノ木（梅田）享英Japan Society of for the Promotion of Science/基盤研究(A)
ワイドギャップ半導体（SiCおよびGaN）MOS界面欠陥の電子スピン共鳴分光同定2017 -- 2019藤ノ木（梅田）享英Japan Society for the Promotion of Science/Grant-in-Aid for Scientific Research(B)18,070,000Yen
more...
Academic background
-- 1994University of Tsukuba Third Cluster of College 基礎工学類
-- 1999University of Tsukuba Graduate School, Division of Engineering Materials Science
Degree
Doctor(Engineering)University of Tsukuba
Academic societies
-- (current)The Japan Society of Applied Physics
Honors & Awards
2013-10The Best Paper AwardThe Best Paper Award of the Dielectric Materials and Metals for Nanoelectronics and Photonics X Symposium
1999Young Scientist Award for the Presentation of an Excellent Paper
1999-03応用物理学会講演奨励賞
Articles
Books
  • ESR and EDMR study on nitrided 4H-SiC MOS structures
    Umeda Takahide
    Oyo Buturi/The Japan Society of Applied Physics/pp.580-583, 2016-07
    CiNii
  • 電子スピン共鳴分光法から見たSiC-MOS界面欠陥と窒素・リンの関係
    Umeda Takahide
    SiC酸化膜界面のパッシベーション技術/応用物理学会先進パワー半導体分科会/pp.47-64, 2016-08
  • 電子スピン共鳴(ESR)法、ESR派生技術
    梅田 享英
    薄膜の評価技術ハンドブック/テクノシステム/pp.60-63, 2013-01
  • アモルファスシリコン中の光励起下の局在電子
    梅田享英; 山崎聡; 磯谷順一; 田中一宜
    固体物理 Vol.33, 1998-01
  • Microscopic mechanism of variable retention time phenomenon in dynamic random access memories
    梅田享英
    OYO BUTSURI Vol.76, 2007-09
  • Technology of Semiconductor SiC and Its Application
    梅田享英; 磯谷順一
    日刊工業新聞社, 2011-09
  • 第40回 薄膜・表面物理基礎講座「ナノ材料研究者のための表面・界面の評価技術の基礎と動向」（ISBN:978-4-86348-207-4）
    梅田享英
    応用物理学会薄膜・表面物理分科会, 2011-11
  • EDMR分光法によるシリコンMOSFET内部の結晶欠陥観察：トランジスタの中で欠陥は何をしているのか？（ISBN:978-4-86348-235-7）
    梅田享英
    応用物理学会分科会 シリコンテクノロジーNo.146, 2012-03
  • Electron paramagnetic resonance study of carbon antisite-vacancy pair in p-type 4H-SiC
    Umeda T.; Morishita N.; Ohshima T.; Itoh H.; Isoya J.
    Silicon Carbide and Related Materials 2006/TRANS TECH PUBLICATIONS LTD/pp.453-456, 2007-01
Conference, etc.
  • a面4H-SiC MOS界面の室温～低温ESR/EDMR評価
    近藤蓮; 曽弘宇; 染谷満; 平井悠久; 渡部平司; 梅田 享英
    先進パワー半導体分科会第10回講演会/2023-11-30--2023-12-01
  • Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques
    Kondo R.; Zeng H.; Sometani M.; Hirai H.; Watanabe H...
    International Conference on Silicon Carbide and Related Materials (ICSCRM-2023)/2023-09-17--2023-09-22
  • Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C-V, and first-principles calculation
    Sometani M.; Nishiya Y.; Kondo R.; Inohana R.; Zeng ...
    International Conference on Silicon Carbide and Related Materials (ICSCRM-2023)/2023-09-17--2023-09-22
  • シリコン中の水素ドナーの同定(2)
    梅田 享英; 清井明
    第84回応用物理学会秋季学術講演会/2023-09-19--2023-09-23
  • シリコンの水素ドナーの同定(1)
    梅田 享英; 清井明
    第84回応用物理学会秋季学術講演会/2023-09-19--2023-09-23
  • 4H-SiC Si面・a面・m面界面欠陥の電流検出型電子スピン共鳴分光法による評価
    比嘉栄斗; 染谷満; 原田信介; 梅田享英; 矢野 裕司
    先進パワー半導体分科会 第6回講演会/2019-12-03--2019-12-04
  • The PbC (carbon dangling bond) center at 4H-SiC(0001)/SiO2 interface: An EDMR study
    Umeda Takahide; Kobayashi Takuma; Matsushita Yu-ichro; Hi...
    International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)/2019-09-29--2019-10-04
  • Electrically-detected-magnetic-resonance study on interface defects at a-face and m-face 4H-SiC/SiO2 interfaces
    Higa Eito; Sometani Mitsuru; Harada Shinsuke; Yano Hiros...
    International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)/2019-09-29--2019-10-04
  • SiC酸化膜界面の基礎物性解明に向けて
    矢野 裕司; 岡本大; 梅田享英; 櫻井岳暁; 蓮沼隆
    SIP「次世代パワーエレクトロニクス」公開シンポジウム/2019-03-28--2019-03-29
  • 4H-SiC MOSFETチャネルの単一光子源のゲート電圧制御（II）
    阿部裕太; 梅田 享英; 岡本光央; 原田信介; 佐藤真一郎; 山﨑雄一; 大島武
    第66回応用物理学会春季学術講演会/2019-03-09--2019-03-12
  • Exploring Single Photon Sources on a-face and m-face 4H-SiC MOSFETs
    阿部裕太; 梅田 享英; 岡本光央; 原田信介; 佐藤真一郎; 山﨑雄一; 大島武
    先進パワー半導体分科会第5回講演会/2018-11-04--2018-11-06
  • 電子スピン共鳴による(111)面Diamond/Al2O3界面欠陥の検出
    真栄力; 加藤宙光; 牧野俊晴; 山崎聡; 梅田 享英
    第79回応用物理学会秋季学術講演会/2018-09-18--2018-09-21
  • 電流検出型電子スピン共鳴による(000-1)4H-SiC/SiO2界面炭素ダングリングボンドの検出
    鹿児山陽平; 梅田 享英; 染谷満; 原田信介; 畠山哲夫
    第79回応用物理学会秋季学術講演会/2018-09-18--2018-09-21
  • 4H-SiC(0001)/SiO2界面の炭素ダングリングボンド欠陥（PbCセンター）
    梅田 享英; 神成田亘平; 奥田貴史; 木本暢恒; 染谷満; 原田信介
    第79回応用物理学会秋季学術講演会/2018-09-18--2018-09-21
  • Electron-spin-resonance characterization on interface carbon defects at 4H-SiC/SiO2 interfaces formed by ultrahightemperature oxidation
    Umeda Takahide; Hosoi T.; Okuda T.; Kimoto T.; Sometani ...
    European Conference on Silicon Carbide and Related Materials 2018/2018-09-02--2018-09-07
  • A microscopic origin of SiC-MOS interface defects determined by electron-spin-resonance spectroscopy
    梅田 享英
    先進パワー半導体分科会第5回講演会/2018-11-04--2018-11-06
  • 電子スピン共鳴分光（ESR）と、電流検出ESR（EDMR）による 半導体の微量欠陥・不純物分析
    梅田 享英
    日本学術振興会「結晶加工と評価技術」第145委員会 第162回研究会/2019-01-31--2019-01-31
  • Electron paramagnetic resonance study on a Si-28 single crystal for the future realization of the kilogram
    Mizushima Shigeki; Fujii Kenichi; Umeda Takahide
    Conference on Precision Electromagnetic Measurements (CPEM)/2018-07-08--2018-07-13
  • Gate-bias control of single photon sources in channel region of 4H-SiC MOSFETInfluence of hydrogen on single photon sources in channel region of 4H-SiC MOSFETs
    阿部 裕太; 岡本 光央; 小野田 忍; 大島 武; 春山 盛善; 加田 渉; 花泉 修; 原田 信介; 鹿児山 ...
    第78回応用物理学会秋季学術講演会/2017-09-05--2017-09-08
  • Gate-bias control of single photon sources in channel region of 4H-SiC MOSFET
    梅田 享英; 阿部 裕太; 岡本 光央; 原田 信介; 春山 盛善; 加田 渉; 花泉 修; 小野田 忍; 大島 武
    第78回応用物理学会秋季学術講演会/2017-09-05--2017-09-08
  • Nitrogen doping of 4H-SiC MOS interface after 15NO post-oxidation anneal characterized by electron-spin-resonance (ESR) spectroscopy
    梅田 享英; 染谷 満; 原田 信介
    第65回応用物理学会春季学術講演会/2018-03-17--2018-03-20
  • Oxidation-process dependence of single photon sources embedded in 4H-SiC MOSFETs
    Abe Y.; Okamoto M.; Onoda S.; Ohshima T.; Haruyama M.; Ka...
    International Conference on Silicon Carbide and Related Materials/2017-09-17--2017-09-22
  • Interface Carbon Defect at Si-face 4H-SiC/SiO2 Interfaces Detected by Electron Spin Resonance
    Kim G.-W.; Okuda T.; Kimoto T.; Umeda Takahide
    International Conference on Silicon Carbide and Related Materials/2017-09-17--2017-09-22
  • Observation of interface defects in free-standing epitaxial diamond substrate with Al2O3 atomic-layer deposition studied by electron spin resonance
    Shinei C.; Kato H.; Makino T.; Yamasaki S.; Umeda Takahide
    International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES (IWDTF)/2017-11-20--2017-11-22
  • Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study
    Umeda T.; Okamoto M.; Yoshioka H.; Kim G-W.; Ma S.; ...
    Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 15 - In Memory of Samares Ka held during the 232nd Meeting of the Electrochemical-Society (ECS)/2017-10-01--2017-10-05
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Teaching
2024-10 -- 2025-02Science and Technology Seminar IIIUniversity of Tsukuba.
2024-04 -- 2024-08Science and Technology Seminar IIIUniversity of Tsukuba.
2024-10 -- 2025-02Research in Nano-Science and Nano-Technology IIAUniversity of Tsukuba.
2024-04 -- 2024-08Research in Nano-Science and Nano-Technology IIIBUniversity of Tsukuba.
2024-04 -- 2024-08Research in Nano-Science and Nano-Technology IAUniversity of Tsukuba.
2024-10 -- 2025-02Research in Nano-Science and Nano-Technology IBUniversity of Tsukuba.
2024-10 -- 2025-02Seminar under Industry-University Collaboration IIIUniversity of Tsukuba.
2024-04 -- 2024-08Seminar under Industry-University Collaboration IIIUniversity of Tsukuba.
2024-10 -- 2025-02Research in Nano-Science and Nano-Technology IAUniversity of Tsukuba.
2024-10 -- 2025-02Science and Technology Seminar IIUniversity of Tsukuba.
more...
Talks
  • シリコン中の水素ドナーの同定(1)
    梅田 享英; 清井明
    第84回応用物理学会秋季学術講演会/2023-09-19--2023-09-23
  • 4H-SiC/SiO2界面窒化処理による窒素ドーピングの定量
    梅田享英; 佐藤嘉洋; 小杉亮治; 佐久間由貴
    第73回応用物理学会学術講演会/2012-09-12
  • EPR identification of defects and impurities in SiC: To be decisive
    J. Isoya; T. Umeda; N. Mizuochi; N.T. Son; E. Janzen; T. ...
    International Conference on Silicon Carbide and Related Materials (ICSCRM) 2007/2007-10-16
  • Divacancy and its identification: Theory
    A. Gali; M. Bockstedte; N.T. Son; T. Umeda; J. Isoya; E. ...
    International Conference on Silicon Carbide and Related Materials (ICSCRM) 2005/2005-09-22
  • Divacancy model for P6/P7 centers in 4H- and 6H-SiC
    N.T. Son; T. Umeda; J. Isoya; A. Gali; M. Bockstedte; B. ...
    International Conference on Silicon Carbide and Related Materials (ICSCRM) 2005/2005-09-22
  • Deep acceptor levels of the carbon vacancy-carbon antisite pairs in 4H-SiC
    P. J. Carlsson; N. T. Son; T. Umeda; J. Isoya; E. Janzen
    The 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006)/2006-09-05
  • Improvement of Data Retention Time Property by Reducing Vacancy-Type Point Defect in DRAM Cell Transistor
    K. Okonogi; K. Ohyu; T. Umeda; H. Miyake; S. Fujieda
    International Reliability Physics Symposium (IRPS) 2006/2006-03-01
  • ESR characterisation of phosphorus donors in n-type diamond
    M. Katagiri; J. Isoya; T. Umeda; S. Koizumi; H. Kanda
    16th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2005)/2005-09-01
  • Identification of divacancies in 4H-SiC
    N.T. Son; T. Umeda; J. Isoya; A. Gali; M. Bockstedte; B. ...
    The 23rd International Conference on Defects in Semiconductors (ICDS-23)/2005-07-29
  • Developments of web-based database system for EPR centers in semiconductors
    T. Umeda; S. Hagiwara; M. Katagiri; N. Mizuochi; J. Isoya
    The 23rd International Conference on Defects in Semiconductors (ICDS-23)/2005-07-28
  • Pulsed EPR studies of phosphorous shallow donors in diamond and SiC
    J. Isoya; M. katagiri; T. Umeda; S. Koizumi; H. Kanda; N....
    The 23rd International Conference on Defects in Semiconductors (ICDS-23)/2005-07-28
  • Measurement of process induced defects in Si sub-micron LSIs by combination of EDMR and TEM
    T. Umeda; A. Toda; Y. Mochizuki
    10th International Conference on Defects: Recognition, Imaging and Physics (DRIP-X)/2003-09-29
  • EPR and pulsed EPR study of structural relaxation of silicon antisite defects in 4H-SiC
    T. Umeda; Y. Ishitsuka; J. Isoya; N. Morishita; T. Oshim...
    International Conference on Silicon Carbide and Related Materials (ICSCRM) 2003/2003-10-10
  • Electron Paramagnetic Resonance Study of the SI5 (SI-5) center in 4H-SiC
    T. Umeda; J. Isoya; N.T. Son; E. Janzen; N. Morishita; T....
    International Conference on Silicon Carbide and Related Materials (ICSCRM) 2005/2005-09-22
  • Shallow phosphrous donors in 3C-, 4H-, and 6H-SiC
    J. Isoya; M. Katagiri; T. Umeda; N.T. Son; A. Henry; E. ...
    International Conference on Silicon Carbide and Related Materials (ICSCRM) 2005/2005-09-19
  • Electron paramagnetic resonance study of carbon antisite-vacancy pair in p-type 4H-SiC
    T. Umeda; J. Isoya; T. Ohshima; N. Morishita; H. Itoh
    The 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006)/2006-09-05
  • Quantitative identification for the physical origin of variable retention time: a vacancy-oxygen complex defect model
    K. Ohyu; T. Umeda; K. Okonogi; S. Tsukada; M. Hidaka; S. ...
    International Electron Device Meeting (IEDM) 2006/2006-12-12
  • Photo-EPR study of vacancy-related defects in irradiated 4H-SiC
    T. Umeda; J. Isoya; N. Morishita; T. Ohshima; H. Itoh
    International Conference on Silicon Carbide and Related Materials (ICSCRM) 2007/2007-10-17
  • Defects in 4H-SiC MOSFET studied by electrically detected magnetic resonance
    T. Umeda; K. Esaki; J. Isoya; R. Kosugi; K. Fukuda; T. O...
    The 7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008)/2008-09-08
  • Electron paramagnetic resonance study of negatively-charged carbon vacancy in 4H-SiC
    T. Umeda; N. T. Son; Y. Ishitsuka; J. Isoya; N. Morishit...
    The 5th European Conference on Silicon Carbide and Related Materials (ECSCRM 2004)/2004-08-30
  • 4H-SiC中のSI5/HEI4センターのEPR解析
    梅田享英; 石塚雄也; 磯谷順一; 森下憲雄; 大島武; 伊藤久義
    第52回応用物理学関係連合講演会/2005-03-30
  • A single vacancy-oxygen complex defect and variable retention time phenomenon in silicon LSI memories
    T. Umeda; K. Okonogi; K. Ohyu; S. Tsukada; K. Hamada; Y. ...
    The 2006 Gordon Research Conference on Defects in Semiconductors/2006-07-05
  • Open web-based databases for defects in semiconductors
    T. Umeda; S. Hagiwara; N. Mizuochi; J. Isoya
    The 2006 Gordon Research Conference on Defects in Semiconductors/2006-07-05
  • 炭化ケイ素中の炭素/シリコン関連欠陥準位の光誘起EPR評価
    梅田享英; 印出知代; 磯谷順一; 森下憲雄; 大島武; 伊藤久義
    第５４回応用物理学関係連合講演会/2007-03-28
  • 電子スピン共鳴分光法による4H-SiC中の格子間炭素欠陥の観察
    梅田享英; 磯谷順一; 森下憲雄; 大島武; 伊藤久義
    第55回応用物理学関係連合講演会/2008-03-28
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(Last updated: 2024-05-09)