SANO Nobuyuki
- Articles
- Self-Consistent Monte Carlo Study of the Coulomb Interaction under Nano-Scale Device Structures
Nobuyuki Sano
The American Physical Society March Meeting 2011, 2011-01 - Impact of the Coulomb Interaction on Nano-Scale Silicon Device Characteristics
Nobuyuki Sano
JOURNAL OF COMPUTATIONAL ELECTRONICS/10(1-2)/pp.98-103, 2011-06 - One-Flux Theory of Saturated Drain Current in Nanoscale Transistors
Ting-wei Tang Massimo V. Fischetti Seonghoon Jin and N...
2011 International Semiconductor Device Research Symposium (ISDRS 2011), 2011-01 - (INVITED) The Role of High-Doped Source and Drain on Device Performance in Nano-Scale Si-MOSFETs
Nobuyuki Sano
2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK)/p.22-23, 2011-01 - Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics
Yoshida Katsuhisa; Okada Yoshitaka; Sano Nobuyuki
APPLIED PHYSICS LETTERS/97(13)/pp.0-0, 2010-09 - Self-Consistent Simulation of Intermediate Band Solar Cell: Effect of Occupation Rate on Device Characteristics
Katsuhisa Yoshida; Yoshitaka Okada; Nobuyuki Sano
Appl. Phys. Lett./97/p.133503_1-3, 2010-01 - (INVITED) Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
Nobuyuki Sano
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2010)/p.xx, 2010-01 - Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
Nobuyuki Sano; Takahiko. Karasawa
International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE)/p.xx, 2010-01 - Pinch-off Voltage Lowering in Polycrystalline-Silicon Thin-Film Transistors
Hiroyuki Ikeda; Nobuyuki Sano
Jpn. J. Appl. Phys/50/p.014301_1-8, 2010-01 - Model-Comparison Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices
Ting-wei Tang; Il-o Yoon; Nobuyuki Sano; Seonghoon Jin; M...
International Workshop on Computational Electronics (IWCE-14), 2010-01 - Simulation of Cosmic-ray Neutron Induced Soft Errors Using PHITS and HyENEXSS
Shin-ichiro Abe; Yukinobu Watanabe; Nozomi Shibano; Nobuy...
The 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), 2010-01 - (INVITED) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
M.V.Fischetti; S. Jin; T.-w. Tang; P. Asbeck; Y. Taur; S. ...
Proceedings of the 217th ECS Meeting/p.pp.xxx, 2010-01 - Self-Consistent Drift-Diffusion Approach for Analysis of Intermediate Band Solar Cells with Multi-Stacked Quantum Dots
Katsuhisa Yoshida; Yoshitaka Okada; and Nobuyuki Sano; +佐...
25th European Photovoltaic Solar Energy Conference and Exhibition (25thEUPVSEC)/p.xx, 2010-01 - Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors
Ikeda Hiroyuki; Sano Nobuyuki
JAPANESE JOURNAL OF APPLIED PHYSICS/48(10)/pp.0-0, 2009-10 - Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-k P-Channel Field Effect Transistors Using Ion-Beam W
Ootsuka Fumio; Katakami Akira; Shirai Kiyoshi; Nakata Hi...
JAPANESE JOURNAL OF APPLIED PHYSICS/48(5:Part 1)/pp.0-0, 2009-05 - Discrete Impurity and Mobility in Drift-Diffusion Simulations for Device Characteristics Variability
Takahiko. Karasawa; Kohei Nakanishi; and Nobuyuki Sano; +...
Proceedings of 2007 International Semiconductor Device Research Symposium (ISDRS 2009)/p.xx, 2009-01 - Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
M.V.Fischetti; S. Jin; T.-w. Tang; P. Asbeck; Y. Taur; S. ...
J.Comp. Electron./8/p.60-77, 2009-01 - (INVITED) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
M.V.Fischetti; S. Jin; T.-w. Tang; P. Asbeck; Y. Taur; S. ...
Proceedings of Connecticut Workshop on Microelectronics and Optoelectronics/p.pp.xxx, 2009-01 - (INVITED) Simulation of Electron Transport in Si Nano Devices
Nobuyuki Sano
Proceedings of G-COE PICE International Symposium on Silicon Nano Devices in 2030 - Prospects by World's Leading Scientists/p.pp.xxx, 2009-01 - Physical Model and Mesh-Size Dependence in Drift-Diffusion Simulations for Single-Event Effects by Heavy Ions
N. Shibano; N. Sano; Y. Tosaka; H. Furuta; M. Tsutsui; an...
Proceedings of 2007 International Semiconductor Device Research Symposium (ISDRS 2009)/p.xx, 2009-01 - Numerical Analysis of Electron Transport in Quasi Quantum Dot Superlattice (Best paper Award)
Katsuhisa Yoshida; Yoshitaka Okada; Nobuyuki Sano
Workshop on Information, Nano and Photonics Technology 2009 (WINPTech2009)/p.xx, 2009-01 - (INVITED) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
M.V.Fischetti; S. Jin; T.-w. Tang; P. Asbeck; Y. Taur; S. ...
Proceedings of International Workshop on Computational Electronics (IWCE-13)/p.pp.xxx, 2009-01 - Consistency of Boundary Conditions in Nonequilibrium Green’s Function Simulations
Suguru Sato; Nobuyuki Sano
J.Comp. Electron./7/p.301-304, 2008-09 - 3D Monte Carlo Analysis of potential Fluctuations under High Electron Concentrations
Tadayoshi Uechi; Takayuki Fukui; and Nobuyuki Sano; +佐野 伸行
J.Comp. Electron./7/p.240-243, 2008-09 - Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction
FUKUI Takayuki; UECHI Tadayoshi; SANO Nobuyuki
Applied physics express/1(5)/pp.51407-1, 2008-05 - more...
- Self-Consistent Monte Carlo Study of the Coulomb Interaction under Nano-Scale Device Structures