Sano Nobuyuki

Researcher's full information

Articles
  • One-Flux Theory of Saturated Drain Current in Nanoscale Transistors
    Ting-wei Tang Massimo V. Fischetti Seonghoon Jin and N...
    2011 International Semiconductor Device Research Symposium (ISDRS 2011), 2011-01
  • (INVITED) The Role of High-Doped Source and Drain on Device Performance in Nano-Scale Si-MOSFETs
    Nobuyuki Sano
    2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK)/p.22-23, 2011-01
  • Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics
    Yoshida Katsuhisa; Okada Yoshitaka; Sano Nobuyuki
    APPLIED PHYSICS LETTERS/97(13)/pp.0-0, 2010-09
  • Self-Consistent Simulation of Intermediate Band Solar Cell: Effect of Occupation Rate on Device Characteristics
    Katsuhisa Yoshida; Yoshitaka Okada; Nobuyuki Sano
    Appl. Phys. Lett./97/p.133503_1-3, 2010-01
  • (INVITED) Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
    Nobuyuki Sano
    International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2010)/p.xx, 2010-01
  • Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction
    Nobuyuki Sano; Takahiko. Karasawa
    International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE)/p.xx, 2010-01
  • Pinch-off Voltage Lowering in Polycrystalline-Silicon Thin-Film Transistors
    Hiroyuki Ikeda; Nobuyuki Sano
    Jpn. J. Appl. Phys/50/p.014301_1-8, 2010-01
  • Model-Comparison Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices
    Ting-wei Tang; Il-o Yoon; Nobuyuki Sano; Seonghoon Jin; M...
    International Workshop on Computational Electronics (IWCE-14), 2010-01
  • Simulation of Cosmic-ray Neutron Induced Soft Errors Using PHITS and HyENEXSS
    Shin-ichiro Abe; Yukinobu Watanabe; Nozomi Shibano; Nobuy...
    The 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), 2010-01
  • (INVITED) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
    M.V.Fischetti; S. Jin; T.-w. Tang; P. Asbeck; Y. Taur; S. ...
    Proceedings of the 217th ECS Meeting/p.pp.xxx, 2010-01
  • Self-Consistent Drift-Diffusion Approach for Analysis of Intermediate Band Solar Cells with Multi-Stacked Quantum Dots
    Katsuhisa Yoshida; Yoshitaka Okada; and Nobuyuki Sano; +佐...
    25th European Photovoltaic Solar Energy Conference and Exhibition (25thEUPVSEC)/p.xx, 2010-01
  • Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors
    Ikeda Hiroyuki; Sano Nobuyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS/48(10)/pp.0-0, 2009-10
  • Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-k P-Channel Field Effect Transistors Using Ion-Beam W
    Ootsuka Fumio; Katakami Akira; Shirai Kiyoshi; Nakata Hi...
    JAPANESE JOURNAL OF APPLIED PHYSICS/48(5:Part 1)/pp.0-0, 2009-05
  • Discrete Impurity and Mobility in Drift-Diffusion Simulations for Device Characteristics Variability
    Takahiko. Karasawa; Kohei Nakanishi; and Nobuyuki Sano; +...
    Proceedings of 2007 International Semiconductor Device Research Symposium (ISDRS 2009)/p.xx, 2009-01
  • Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
    M.V.Fischetti; S. Jin; T.-w. Tang; P. Asbeck; Y. Taur; S. ...
    J.Comp. Electron./8/p.60-77, 2009-01
  • (INVITED) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
    M.V.Fischetti; S. Jin; T.-w. Tang; P. Asbeck; Y. Taur; S. ...
    Proceedings of Connecticut Workshop on Microelectronics and Optoelectronics/p.pp.xxx, 2009-01
  • (INVITED) Simulation of Electron Transport in Si Nano Devices
    Nobuyuki Sano
    Proceedings of G-COE PICE International Symposium on Silicon Nano Devices in 2030 - Prospects by World's Leading Scientists/p.pp.xxx, 2009-01
  • Physical Model and Mesh-Size Dependence in Drift-Diffusion Simulations for Single-Event Effects by Heavy Ions
    N. Shibano; N. Sano; Y. Tosaka; H. Furuta; M. Tsutsui; an...
    Proceedings of 2007 International Semiconductor Device Research Symposium (ISDRS 2009)/p.xx, 2009-01
  • Numerical Analysis of Electron Transport in Quasi Quantum Dot Superlattice (Best paper Award)
    Katsuhisa Yoshida; Yoshitaka Okada; Nobuyuki Sano
    Workshop on Information, Nano and Photonics Technology 2009 (WINPTech2009)/p.xx, 2009-01
  • (INVITED) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
    M.V.Fischetti; S. Jin; T.-w. Tang; P. Asbeck; Y. Taur; S. ...
    Proceedings of International Workshop on Computational Electronics (IWCE-13)/p.pp.xxx, 2009-01
  • Consistency of Boundary Conditions in Nonequilibrium Green’s Function Simulations
    Suguru Sato; Nobuyuki Sano
    J.Comp. Electron./7/p.301-304, 2008-09
  • 3D Monte Carlo Analysis of potential Fluctuations under High Electron Concentrations
    Tadayoshi Uechi; Takayuki Fukui; and Nobuyuki Sano; +佐野 伸行
    J.Comp. Electron./7/p.240-243, 2008-09
  • Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction
    FUKUI Takayuki; UECHI Tadayoshi; SANO Nobuyuki
    Applied physics express/1(5)/pp.51407-1, 2008-05
  • Impacts of Random Dopant Fluctuation on Transient Characteristics in CMOS Inverters: A Device Simulation Study
    Shuichi Toriyama; Kazuya Matsuzawa; and Nobuyuki Sano; +佐...
    Proceedings of International Conference on Solid State Materials and Devices (SSDM-2008)/p.pp.892-893, 2008-01
  • 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes
    Tadayoshi Uechi; Takayuki Fukui; and Nobuyuki Sano; +佐野 伸行
    Phys. stat. sol.(c)/5/p.102-106, 2008-01
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