SANO Nobuyuki

Researcher's full information

Articles
  • Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy
    Takeuchi O; Aoyama M; Oshima R; Okada Y; Oigawa H; Sano ...
    APPLIED PHYSICS LETTERS/85(15)/pp.3268-3270, 2004-10
    CiNii Tsukuba Repository
  • Theoretical Study of Quasi-Ballistic Electron Transport from the Viewpoint of the Kinetic Equation
    佐野 伸行
    Technical report of IEICE. VLD/104(322)/pp.45-50, 2004-09
    CiNii
  • Impact ionization coefficients of 4H silicon carbide
    Hatakeyama T; Watanabe T; Shinohe T; Kojima K; Arai K; Sa...
    APPLIED PHYSICS LETTERS/85(8)/pp.1380-1382, 2004-08
  • Kinetic Study of Velocity Distributions in Nanoscale Semiconductor Devices under Room-Temperature Operation
    Nobuyuki Sano
    Appl. Phys. Lett./85/p.4208-4210, 2004-01
  • Impact Ionization Coefficients in Silicon Carbite
    T. Hatakeyama; T. Watanabe; K. Kojima; N. Sano; K. S...
    Materials Science Forum/457-460/p.673, 2004-01
  • Stable Simulation of Impurity Fluctuation for Contact Resistance and Schottky Diodes
    Kazuya Matsuzawa; Nobuyuki Sano
    Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2004)/p.231-234, 2004-01
  • Impact Ionization Coefficients in Silicon Carbite
    T. Hatakeyama; T. Watanabe; T. Shinohe; K. Kojima; K. Ar...
    Appl. Phys. Lett./85/p.1380-1382, 2004-01
  • Statistical Study of Subthreshold Characteristics in Polycrystalline Silicon Thin-Film Transistors
    Yoshiyuki Kitahara; Shigeyuki Takagi; Nobuyuki Sano
    J. Appl. Phys./94/p.7789-7795, 2003-01
  • (INVITED) Electron Kinetic Transport under Localized Impurities: How Could Localized Impurities be Incorporated in Simulations?
    Nobuyuki Sano
    The Proceedings of The 9-th IMACS Seminar on Monte Carlo Methods MCM-2003/p.5-6, 2003-01
  • A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film TransistorsC
    Yoshiyuki Kitahara; Shuichi Toriyama; and Nobuyuki Sano; ...
    Jpn. J. Appl. Phys./42/p.L634-L636, 2003-01
  • Probability Distribution Functions of Threshold Voltage Fluctuations due to Random Impurities in Deca–nano MOSFETs
    Shuichi Toriyama; Nobuyuki Sano
    Physica E/19/p.44-47, 2003-01
  • Probability Distribution Functions of Threshold Voltage Fluctuations due to Random Impurities in Deca-nano MOSFETs？
    Shuichi Toriyama; Nobuyuki Sano
    The 4-th International Symposium on Nanostructures and Mesoscopic Structures (nanoMES-2003)/p.FP-2, 2003-01
  • Statistical Analyses of the Influence of Grain Boundary Variations in Poly-Si TFTs
    北原 義之; 高木 茂行; 鳥山 周一; 佐野 伸行
    Technical report of IEICE. SDM/102(346)/pp.25-30, 2002-09
    CiNii
  • Statistical Analyses of the Influence of Grain Boundary Variations in Poly-Si TFTs
    北原 義之; 高木 茂行; 鳥山 周一; 佐野 伸行
    Technical report of IEICE. VLD/102(344)/pp.25-30, 2002-09
    CiNii
  • Device simulation and its physics
    佐野 伸行
    應用物理/71(7)/pp.906-910, 2002-07
    CiNii
  • デバイスシミュレーションとその物理
    佐野伸行
    応用物理学会誌/7月号/p.906-910, 2002-07
  • Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
    SANO Nobuyuki; MATSUZAWA Kazuya; HIROKI Akira; NAKAYAMA ...
    Japanese journal of applied physics. Pt. 2, Letters/41(5)/pp.L552-L554, 2002-05
    CiNii
  • Significance of the Long-range Part of the Potential on the Mobility in Impure Semiconductorsb
    Takashi Kurusu; Nobuyuki Sano
    Physica B/314/p.198-202, 2002-01
  • (INVITED) Device Modeling and Simulations toward Sub-10 nm Semiconductor Devices
    Nobuyuki Sano; Akira Hiroki; and Kazuya Matsuzawa
    IEEE Transactions on Nanotechnology/1/p.63-71, 2002-01
  • モデリングの立場からみた微細化限界：物理的観点からの私見
    佐野伸行
    BREAKTHROUGH/185/p.4-7, 2002-01
  • On Discrete Random Dopant Modeling in Drift-Diffusion Simulations:Physical Meaning of Atomistic Dopants
    Nobuyuki Sano Kazuya Matsuzawa Mikio Mukai and Noriak...
    Microelectronics Reliability/42/p.189-199, 2002-01
  • Effects of Long-Range Coulomb Potential Associated with Electron-Impurity Interaction on Electron Mobility in Impure Bulk Semiconductors
    来栖 貴史; 佐野 伸行; 松沢 一也; 広木 彰; 中山 範明
    Technical report of IEICE. VLD/101(319)/pp.61-66, 2001-09
    CiNii
  • Effects of Long-Range Coulomb Potential Associated with Electron-Impurity Interaction on Electron Mobility in Impure Bulk Semiconductors
    来栖 貴史; 佐野 伸行; 松沢 一也; 広木 彰; 中山 範明
    Technical report of IEICE. SDM/101(321)/pp.61-66, 2001-09
    CiNii
  • Minimum Value of the Specific Contact Resistance of Si-Metal Contacts
    Kenji Natori; Tomo Shimizu; and Nobuyuki Sano; +佐野 伸行
    Proceedings of the Int. Conf. on Solid State Devices and Materials/p.388-389, 2001-01
  • Mobility Degradation by Long-range Potential Fluctuations in Impure Bulk Semiconductors
    Takashi Kurusu; Nobuyuki Sano
    Proceedings of the International Conference on Nonequilibrium Carrier Transport/p.1_25, 2001-01
  • more...