SANO Nobuyuki
- Articles
- Quantitative Prediction of Threshold Voltage Fluctuations in Sub-100nm MOSFETs by a New Dopant Model
Hiroyuki Yamamoto; Yoshimitsu Okada; and Nobuyuki Sano; +...
Proceedings of Device Research Conference(DRC-2001)/p.171-172, 2001-01 - (INVITED) Device Physics and TCAD: Simulation Issues for Sub-100 nm Devicesc
Nobuyuki Sano
Proceedings of the 14-th SEMICON Korea Technical Symposium 2001/p.473-484, 2001-01 - (INVITED) Discrete Random Dopants and Vth Fluctuations in Sub-100 nm MOSFETs
Nobuyuki Sano
Proceeding of the Si Nanoelectronics Workshop (SNW-2001)/p.48-49, 2001-01 - Transport Characteristics of the Cross Junction of Atomic Chains
Tomo Shimizu; Kenji Natori; and Nobuyuki Sano; +佐野 伸行
Japanese Journal of Applied Physics/40/p.4489-4495, 2001-01 - A Random Dopant Model for 3-D Drift-Diflusion Simulations in MOSFETS
Nobuyuki Sano; Masaaki Tomizawa
Applied Physics Letters/79/p.2267-2269, 2001-01 - (INVITED) Atomistic Effects on Transport Characteristics
Nobuyuki Sano
Proceedings of the Progress in Electromagnetics Research Symposium/p.p. 403, 2001-01 - Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
SANO Nobuyuki; MATSUZAWA Kazuya; MUKAI Mikio; NAKAYAMA N...
Japanese journal of applied physics. Pt. 1, Regular papers & short notes/39(4)/pp.1974-1978, 2000-04 - Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
Nobuyuki Sano; Kazuya Matsuzawa; Mikio Mukai; and Noriak...
Jpn. J. Appl. Phys.`/4B/p.1974-1978, 2000-01 - A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down Single-Electron Transistor with a Silicon rectangular Parallelepiped Quantum Dots
Kenji Natori; Tsuyoshi Uehara; and Nobuyuki Sano; +佐野 伸行
Jpn. J. Appl. Phys./5A/p.2550-2555, 2000-01 - Role of Long-Range and Short-Range Coulomb Potentials in Threshold Characteristics under Discrete Dopants in Sub-0.1 um Si-MOSFETs
Nobuyuki Sano; Kazuya Matsuzawa; Mikio Mukai; and; Noriaki...
IEEE International Electron Devices Meeting (IEDM-2000)/p.275-278, 2000-01 - Monte Carlo Simulation of Current Fluctuation at Actual Contact
Kazuya Matsuzawa; Nobuyuki Sano; Kenji Natori; Mikio Muk...
Proceeding of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2000)/p.233-236, 2000-01 - Statistical Threshold Fluctuations in Si-MOSFETs: Jellium vs. Atomistic Dopant VariationsV
Nobuyuki Sano; Masaaki Tomizawa; and Kenji Natori
International Conference on Solid State Devices and Materials (SSDM-2000)/p.216-217, 2000-01 - (INVITED) Increasing Importance of Electronic Thermal Noise in Sub-0.1 um Si-MOSFETs
Nobuyuki Sano
IEICE Trans. Electron./E83-C/p.1203-1211, 2000-01 - Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
SANO Nobuyuki; NATORI Kenji; MATSUZAWA Kazuya; MUKAI Mikio
Extended abstracts of the ... Conference on Solid State Devices and Materials/1999(0)/pp.22-23, 1999-09 - Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
SANO Nobuyuki; NATORI Kenji; MATSUZAWA Kazuya; MUKAI Mikio
Japanese journal of applied physics. Pt. 2, Letters/38(5)/pp.L531-L533, 1999-05 - Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETS
佐野 伸行
Proceedings of the International Conference on Solid State Devices and Materials (SSDM-99)/p.22, 1999-01 - (INVITED) Sub-0.1 micron Device Simulation Technology : Another Problems for Monte Carlo Simulations
佐野 伸行
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-99)/p.23, 1999-01 - Quantum versus Classical Scattering in Semiconductor Charge Transport : A Quantitative Comparison
佐野 伸行
Physica B/272/p.299, 1999-01 - Current Fluctuation Characteristic-of Sub-0.1 Micron Device Structures : A Monte Carlo Study
佐野 伸行
Japanese Journal of Applied Physics/38/p.L531, 1999-01 - Quantum versus Classical Scattering in Semiconductor Charge Transport
佐野 伸行
Proceedings of the International Conference on Nonequilibrium Carrier Transport in Semiconductors/p.86, 1999-01 - A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode
佐野 伸行
IEICE Transactions on Electronics/E-82C/p.1599, 1999-01 - Device-Size Dependence of Current Fluctuation Simulation under Ultra-Small Device Structures
北原 義之; 佐野 伸行; 名取 研二; 向井 幹雄; 松沢 一也
IEICE technical report. Electron devices/98(348)/pp.53-60, 1998-10 - Device-Size Dependence of Current Fluctuation Simulation under Ultra-Small Device Structures
北原 義之; 佐野 伸行; 名取 研二; 向井 幹雄; 松沢 一也
Technical report of IEICE. VLD/98(346)/pp.53-60, 1998-10 - Device-Size Dependence of Current Fluctuation Simulation under Ultra-Small Device Structures
北原 義之; 佐野 伸行; 名取 研二; 向井 幹雄; 松沢 一也
Technical report of IEICE. ICD/98(352)/pp.53-60, 1998-10 - Device-Size Dependence of Current Fluctuation Simulation under Ultra-Small Device Structures
北原 義之; 佐野 伸行; 名取 研二; 向井 幹雄; 松沢 一也
Technical report of IEICE. SDM/98(350)/pp.53-60, 1998-10 - more...
- Quantitative Prediction of Threshold Voltage Fluctuations in Sub-100nm MOSFETs by a New Dopant Model