SANO Nobuyuki
- Articles
- Scaling Limit of Digital Circuits dut to Thermal Noise
佐野 伸行
Journal of Applied Phsics/83/p.5019, 1998-01 - Hole-Initiated Impact Ionization and Split-off Band in Ge, Si, GaAs, InAs, and InGaAs
佐野 伸行
Proceedings of the International Workshop on Computational Electronics(IWCE-98)/p.198, 1998-01 - Physical Mechanism of Current Fluctuation under Ultra-small Device Structures
佐野 伸行
Proceedings of the International Workshop on Computational Electronics(IWCE-98)/p.112, 1998-01 - Thickness Dependence of the Effective Dielectric Constant in a Thin Film Capacitor
佐野 伸行
Applied Physics Letters/73/p.632, 1998-01 - Quantum Kinetic Transport under High Electric Fields
佐野 伸行
VLSI Design/6/p.3, 1998-01 - An Analysis of the Kink Phenomena in InAlAs/InGaAs HEMTs using Two-Dimensional Device Simulation
佐野 伸行
IEEE Transactions on Electron Devices/ED-45/p.2390, 1998-01 - Current Bistability in Resnant Tunneling through a Semiconductor Quantum Dot
佐野 伸行
Super lattices and Microstructures/23/p.1339, 1998-01 - Substrate Current Fluctuation under Law Drain Voltages in Si-MOSFETs
佐野 伸行
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices(SISPAD-97)/p.213, 1997-01 - Asymmetric Intersubband Phonon Scattering Associated with Intra-Collisional Field Effect in One-Dimensional Quantum Wires
佐野 伸行
Journal of Physics : Condensed Matter/9/p.193, 1997-01 - Full-Band Structure Theory of High-Field Transport and Impact Ionization of Electrons and Holes in Ge, Si, and GaAs
佐野 伸行
IEEE Journal of Technology CAD, 1997-01 - Resonant Tunneling Through a Semiconductor Quantum Dot
佐野 伸行
Super latlices and Microstructures/23/p.1339, 1997-01 - Full-Band Monte Carlo Simulation of High-Energy Transport and Impact Ionization of Electrons and Holes in Ge, Si, and GaAs.
佐野 伸行
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices(SISPAD-96)/p.43, 1996-01 - The Resonant Tunneling Mode of a Single Electron Transistor
佐野 伸行
Proceedings of the International Conference of Solid State Devices and Materials(SSDM-96)/p.452, 1996-01 - Drift-Velocity Degradation Caused by Electric Field during Collision in One-Dimensional Quantum Wires
佐野 伸行
Physical Review B(Rapid Communication)/54/p.R8325, 1996-01 - (INVITED) Device-Lifetime Uncertainty associated with Intrinsic Anisotropy of Impact Ionization in Si-MOSFET's
佐野 伸行
Proceedings of the International Electron Devices and Materials Symposia(IEDMS-96)y/p.313, 1996-01 - (INVITED) Quantum Kinetic Transpart under High Electric Fieldso
佐野 伸行
Proceedings of the International Workshop on Computational Electronics (IWCE-95)/p.1, 1995-01 - Impact-Ionization Model Consistent with the Band Structure of Semiconductors
佐野 伸行
Journal of Applied Physics/77/p.2020, 1995-01 - Temperature Dependence of Hot Carrier Effects in Short-Channel Si-MOSFET's
佐野 伸行
IEEE Transactions on Electron Devices/ED-42/p.2211, 1995-01 - A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport in Silicon
佐野 伸行
IEEE Transactions on Electron Devices/ED-41/p.1646, 1994-01 - Impact Ionization Rate near Thersholds in Si
佐野 伸行
Journal of Apphed Physics/75/p.5102, 1994-01 - (INVITED) Energy Brodening Associate with Finite Collision Duration in Hot Carrier Transport in Semiconductors
佐野 伸行
Proceedings of the International Workshop on VLSI Process and Device Modeling (VPAD-93)/p.162, 1993-01 - Energy Broadening in Ultrafast Relaxation Processes of Photoexcited Electrons
佐野 伸行
Physical Review B/48/p.1426, 1993-01 - Quasi-Zero-Dimensional States in Ballistic Quantum Wires
佐野 伸行
Physical Review B/47/p.16601, 1993-01 - Impact Ionization Theory Consistent with a Realistic Band Structure of Silicon
佐野 伸行
Physical Review B/45/p.4171, 1992-01 - Quantum Effects on Electron-Phonon Interaction under High Electric Field in Semiconductors
佐野 伸行
Semiconductor Science and Technology/7/p.B36, 1992-01 - more...
- Scaling Limit of Digital Circuits dut to Thermal Noise