SANO Nobuyuki

Researcher's full information

Articles
  • Transport Properties of Ballistic Quantum Wire
    佐野 伸行
    Proceedings of the International Conference on Solid State Devices and Materials (SSDM-92)/p.753, 1992-01
  • Effects of Width Increase in the Ballistic Quantum Wire
    佐野 伸行
    Physical Review B/45/p.14131, 1992-01
  • Hot Carrier Luminescence in Si
    佐野 伸行
    Physical Review B/45/p.5848, 1992-01
  • Direct Comparison of Quantum and Classical Descriptions of High-Field Carrier Transport in Semiconductors
    佐野 伸行
    Journsl of Applied Physics/70/p.3127, 1991-01
  • (INVITED) Monte Carlo Analysis of Hot Electron Transport and Smpact Ionization in silicon
    佐野 伸行
    Proceedings of the International Conference on Solid State Devices and Materials (SSDM-91)/p.456, 1991-01
  • Monte Carlo Aralysis of Hot Eectron Transport and Impact Ionization in Si
    佐野 伸行
    Japanese Journal of Applied Physics/30/p.3662, 1991-01
  • Electron Transport and Impact Ionization in Si
    佐野 伸行
    Physical Review B/41/p.12122, 1990-01
  • Monte Carlo Analysis of Ionization Threshold in Si
    佐野 伸行
    Applied Physics Letters/56/p.653, 1990-01
  • Physical Mechanism of Impact Ionization in Si : A Monte Carlo Analysis
    佐野 伸行
    Proceedings of the International Workshop on VLSI Process and Device Modeling (VPAD-90)/p.34, 1990-01
  • Soft and Hard Ionization Thresholds in Si and GaAs
    佐野 伸行
    Applied Physics Letters/55/p.1418, 1989-01
  • A Monte Carlo Study of Hot-Electron Transport under a Needle-Plate Assembly
    佐野 伸行
    Journal of Physics D/22/p.309, 1989-01
  • Hot-Electron Transport in a Needle-Plate Geometry
    佐野 伸行
    Journal of Physics D/21/p.1025, 1988-01
  • Electron Transport in SiO2 under a Strongly Inhomogeneous Electric Field
    佐野 伸行
    Journal of Applied Physics/64/p.2785, 1988-01