SUEMASU Takashi

Researcher's full information

Articles

• Fabrication of highly oriented Mn4N/Pt epitaxial bilayer structure on MgO(001) for spintronics applications
  Suemasu Takashi; Yasuda T.; Horiuchi T.
  AIP ADVANCES/13(10)/pp.105219.1-105219.6, 2023-10
• Growth of ultrathin Mn4N epitaxial films on SrTiO3(001) and their thickness-dependent magnetic structures
  Yasuda T.; Amemiya K.; Suemasu Takashi
  APPLIED PHYSICS LETTERS/123(12)/pp.122404.1-122404.7, 2023-09
• Effects of hydrogen on trap neutralization in BaSi2 with interstitial silicon atoms
  Suemasu Takashi; Toko K.; Aonuki S.; Filonov A. B.; M...
  Thin solid films/773/pp.139823.1-139823.8, 2023-04
• Device operation of P-ion-implanted n-BaSi2/p-Si heterojunction solar cells
  Aonuki S; Yamashita Y.; Limodio G.; Narita S.; Takaya...
  PROGRESS IN PHOTOVOLTAICS/31/pp.1360-1368, 2022-12
• A comprehensive study on RbGeI3 based inorganic perovskite solar cell using green synthesized CuCrO2 as hole conductor
  Suemasu Takashi; Sarkar D.K.; Mottakin M.; Hasan A.K....
  Journal of Photochemistry and Photobiology A : Chemistry/439/pp.114623.1-114623.13, 2023-05
• Sign reversal in anomalous Hall effect at two Sn compositions in Mn4-xSnxN films on MgO(001) substrates
  Suemasu Takashi; Yasuda T.; Komori T.; Mitarai H.; Ho...
  AIP Advances/13/pp.015119.1-015119.5, 2023-01
• Short-range spin order in paramagnetic AgCrSe2
  Suemasu Takashi; Nakamura J.G.; Kawakita Y.; Okabe H....
  Journal of Physics and Chemistry of Solids/175/pp.111199.1-111199.8, 2022-12
• Structural design of BaSi2 solar cells with a-SiC electron-selective transport layers
  Suemasu Takashi; Du R.; Aonuki S.; Hasebe H.; Kido K...
  Japanese Journal of Applied Physics/62/pp.SD1015.1-SD1015.7, 2023-01
• Demonstration of B-ion-implanted p-BaSi2/n-Si heterojunction solar cells
  Suemasu Takashi; Toko K.; Narita S.; Takayanagi K.; I...
  Japanese Journal of Applied Physics/62/pp.SD1017.1-SD1017.6, 2023-01
• Formation of NiO films by reactive sputtering and application to BaSi2 heterojunction solar cells as hole-selective interlayer material
  Suemasu Takashi; Takenaka H.; Hasebe H.; Kido K.; Koi...
  Japanese Journal of Applied Physics/62/pp.SD1011.1-SD1011.7, 2022-12
• Study of electron paramagnetic resonance as a tool to discriminate between boron related defects in barium disilicide
  Suemasu Takashi; Gambarelli S.; Mouesca J.M.; Cao Y.
  Japanese Journal of Applied Physics/62/pp.SD1009.1-SD1009.5, 2022-12
• Towards B-doped p-BaSi2 films on Si substrates by co-sputtering of BaSi2, Ba, and B-doped Si targets
  Suemasu Takashi; Hasebe H.; Kido K.; Takenaka H.; Mes...
  Japanese Journal of Applied Physics/62/pp.SD1010.1-SD1010.6, 2022-12
• High-temperature post-annealing effect on the device performance of B-doped p-type BaSi2/n-Si heterojunction solar cells grown by molecular beam epitaxy
  Suemasu Takashi; Narita S.; Aonuki S.; Yamashita Y.; ...
  Japanese Journal of Applied Physics/62/pp.SD1003.1-SD1003.6, 2022-11
• Metal-induced lateral crystallization of germanium thin films
  Ishiyama Takamitsu; Igura Kota; Suemasu Takashi; Toko ...
  MATERIALS & DESIGN/232, 2023-08
• Interfacial Nucleation Control in Amorphous GeSn Thin Films Using Bilayer Structure
  Maeda Shintaro; Ishiyama Takamitsu; Saitoh Noriyuki; Y...
  CRYSTAL GROWTH & DESIGN/23(8)/pp.5535-5540, 2023-04
• High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures
  Nozawa K.; Ishiyama T.; Nishida T.; Saitoh N.; Yoshiz...
  APPLIED PHYSICS LETTERS/122(20), 2023-05
• Semiconducting Silicide Green Technologies
  Nakamura Yoshiaki; Suemasu Takashi
  JAPANESE JOURNAL OF APPLIED PHYSICS/62(SD:D), 2023-05
• n-Type Polycrystalline Germanium Layers Formed by Impurity-Doped Solid-Phase Growth
  Nozawa Koki; Nishida Takeshi; Ishiyama Takamitsu; Suem...
  ACS APPLIED ELECTRONIC MATERIALS/5(3)/pp.1444-1450, 2023-03
• Image processing-based domain-matching simulation for heteroepitaxy
  Ishiyama Takamitsu; Imajo Toshifumi; Suemasu Takashi; Tok...
  arXiv:2205.07419 [cond-mat.mtrl-sci], 2022-05
• Thickness Dependency of Battery Anode Properties in Multilayer Graphene
  Suzuki T.; Murata H.; Kado Y.; Ishiyama T.; Saitoh N.; Yo...
  ACS APPLIED MATERIALS & INTERFACES/14(49)/pp.54670-54675, 2022-12
• High Thermoelectric Performance in Polycrystalline GeSiSn Ternary Alloy Thin Films
  Maeda S.; Ishiyama T.; Nishida T.; Ozawa T.; Saitoh N.; Y...
  ACS APPLIED MATERIALS & INTERFACES/14(49)/pp.54848-54854, 2022-12
• Metal-Catalyzed Nanostructured Silicon Films as Potential Anodes for Flexible Rechargeable Batteries
  Nozawa Koki; Murata Hiromasa; Suemasu Takashi; Toko Kaoru
  ACS Applied Nano Materials/5/p.17264, 2022-11
• Machine learning of fake micrographs for automated analysis of crystal growth process
  Ishiyama Takamitsu; Imajo Toshifumi; Suemasu Takashi; Tok...
  Science and Technology of Advanced Materials: Methods/2/pp.213-221, 2022-06
• Acceptor defects in polycrystalline Ge layers evaluated using linear regression analysis
  Imajo T.; Ishiyama T.; Nozawa K.; Suemasu T.; Toko K.
  SCIENTIFIC REPORTS/12(1), 2022-09
• Co-sputtering deposition of high-photoresponsivity and high-mobility polycrystalline BaSi2 films on Si substrates
  Kido K.; Koitabashi R.; Ishiyama T.; Hasebe H.; Mesuda M...
  THIN SOLID FILMS/758, 2022-09
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