SUEMASU Takashi
- Articles
- Fabrication and Characterization of BaSi2 Epitaxial Films over 1 μm on Si(111)
Suemasu Takashi
Japanese Journal of Applied Physics, 2014-05 - Fabrication and characterization of BaSi2 epitaxial films over 1 mu m in thickness on Si(111)
Takabe Ryouta; Nakamura Kotaro; Baba Masakazu; Du Wei...
JAPANESE JOURNAL OF APPLIED PHYSICS/53(4:::SI), 2014-04 - Al-induced low-temperature crystallization for large-grained Ge(111) thin films on amorphous insulators
都甲 薫; 末益 崇
Technical report of IEICE. SDM/114(1)/pp.27-29, 2014-04 - Effect of substrates on Al-induced crystallized Ge layers on insulating films and its application to flexible substrates
大谷 直生; 都甲 薫; 沼田 諒平; 中沢 宏紀; 宇佐美 徳隆; 末益 崇
Technical report of IEICE. SDM/114(1)/pp.31-32, 2014-04 - Fabrication and characterization of BaSi_2 epitaxial films on Si(111) for developing BaSi_2 on glass
高部 涼太; 都甲 薫; 沼田 諒平; 原 康祐; 馬場 正和; DU Weijie; 宇佐美 徳隆; 末益 崇
Technical report of IEICE. SDM/114(1)/pp.35-37, 2014-04 - Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange
Numata Ryohei; Toko Kaoru; Usami Noritaka; Suemasu Takashi
Thin Solid Films/557/pp.147-150, 2014-04 - Structural Characterization of Polycrystalline Ge Thin Films on Insulators Formed by Diffusion-enhanced Al-Induced Layer Exchange
Numata Ryohei; Toko Kaoru; Oya Naoki; Usami Noritaka; Suem...
Japanese Journal of Applied Physics/53(4)/p.04EH03, 2014-04 - Self-organization of Ge(111)/Al/glass structures through layer exchange in metal-induced crystallization
Toko K.; Nakazawa K.; Saitoh N.; Yoshizawa N.; Suemasu T.
CRYSTENGCOMM/16(41)/pp.9590-9595, 2014 - Al-induced Crystallization of Amorphous-Ge Thin Films on Conducting Layer Coated Glass Substrates
Nakazawa Koki; Toko Kaoru; Usami Noritaka; Suemasu Takashi
Japanese Journal of Applied Physics/53(4)/p.04EH01, 2014-04 - N-Type Doping of BaSi2 Epitaxial Films by Phosphorus Ion Implantation and Thermal Annealing
Hara Kosuke O.; Hoshi Yusuke; Usami Noritaka; Shiraki Yasuhi...
Thin Solid Films/557/pp.90-93, 2014-04 - Diffusion Coefficients of Impurity Atoms in BaSi2 Epitaxial Films Grown by Molecular Beam Epitaxy
Zhang Ning; Nakamura Kotaro; Baba Masakazu; Toko Kaoru; Suema...
Japanese Journal of Applied Physics/53(4:::SI), 2014-04 - Orientation control of Ge thin films by underlayer-selected Al-induced crystallization
Toko Kaoru; Nakazawa K.; Saitoh N.; Yoshizawa N.; Usami N.; Su...
CrystEngComm/16(13)/pp.2578-2583, 2014-04 - Engineering of p-n junction for High Efficiency Semiconducting BaSi2 based Thin Film Solar Cells
Khan M. Ajmal; Hara K. O.; Du W.; Baba M.; Nakamura K.; Suzuno...
PROCEEDINGS OF 2014 11TH INTERNATIONAL BHURBAN CONFERENCE ON APPLIED SCIENCES & TECHNOLOGY (IBCAST)/pp.18-21, 2014 - Si-based New Material for High-Efficiency Thin Film Solar Cells
Du Weijie; Baba Masakazu; Toko Kaoru; Hara Kosuke O.; ...
2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD)/pp.69-72, 2014 - Photoresponse properties of undoped BaSi2 epitaxial layers on n(+)-BaSi2/p(+)-Si(001) by molecular beam epitaxy
Koike Shintaro; Baba Masakazu; Takabe Ryota; Zhang Ning; Du W...
Jpn. J. Appl. Phys./53(5)/p.58007, 2014-04 - Large-grained poly-Ge/conductor/glass structures formed by Al-induced crystallization
中沢 宏紀; 都甲 薫; 宇佐美 徳隆; 末益 崇
Technical report of IEICE. SDM/114(1)/pp.33-34, 2014-04 - Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer
Numata Ryohei; Toko Kaoru; Nakazawa Koki; Usami Noritaka; Sue...
Thin Solid Films/557/pp.143-146, 2014-04 - Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange
Toko Kaoru; Numata R.; Saitoh N.; Yoshizawa N.; Usami N.; Suem...
JOURNAL OF APPLIED PHYSICS/115(9)/p. 094301, 2014-03 - Low-temperature (180°C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization
Toko Kaoru; Numata R.; Oya N.; Fukata N.; Usami N.; Suemasu T.
APPLIED PHYSICS LETTERS/104(3)/p.022106, 2014-01 - Fabrication and characterization of polycrystalline BaSi2 by RF sputtering
Latiff Nurul Amal Abdul; Yoneyama Takahiro; Shibutami Tetsu...
Physica status solidi c/10(12)/pp.1759-1761, 2013-12 - Fabrication of n+-BaSi2/p+-Si Tunnel Junction on Si(001) Surface for characterization of photoresponse properties of BaSi2 epitaxial films
Koike S.; Baba M.; Nakamura K.; Ajmal K. M.; Du W.; Toko K.; Su...
Physica status solidi c/10(12)/pp.1773-1776, 2013-12 - Fabarication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy
Suemasu Takashi
Physica status solidi c, 2013-12 - Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates
Baba Masakazu*; Hara Kosuke O.; Toko Kaoru; Saito Noriyuki; Y...
Physica status solidi c/10(12)/pp.1756-1758, 2013-12 - Evaluation of diffusion coefficients of n-type impurities in MBE-grown BaSi2 epitaxially layers
Zhang N.; Nakamura K; Baba M.; Toko K.; Suemasu Takashi
Physica status solidi c/10(12)/pp.1762-1764, 2013-12 - Fabrication of BaSi2 films on Si(111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structure
Numata Ryohei; Toko Kaoru; Usami Noritaka; Suemasu Takashi
Physica Status Solidi c/10(12)/pp.1769-1772, 2013-12 - more...
- Fabrication and Characterization of BaSi2 Epitaxial Films over 1 μm on Si(111)