SUEMASU Takashi
- Articles
- Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates
Nakazawa K.; Toko Kaoru; Saitoh N.; Yoshizawa N.; Usami N.; Su...
Physica Status Solidi c/10(12)/pp.1781-1784, 2013-12 - Electronic structures and magnetic moments of Co3FeN thin films grown by molecular beam epitaxy
Ito Keita; Sanai Tatsunori; Zhu Siyuan; Yasutomi Yoko; Toko K...
Applied Physics Letters/103(23), 2013-12 - Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing
Hara Kosuke O.; Usami Noritaka; Nakamura Kotaro; Takabe Ryou...
APPLIED PHYSICS EXPRESS/6(11), 2013-11 - Determination of bulk minority-carrier lifetime in BaSi2 films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing
Suemasu Takashi
Applied Physics Express/6, 2013-10 - Possibility of spin-polarized electric current through Mn-, Fe-, Co-, or Ni-doped BaSi2 predicted by their calculated densities of states
Imai Yoji; Sohma Mitsugu; Suemasu Takashi
Journal of Magnetism and Magnetic Materials/344/pp.25-29, 2013-10 - Hard X-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi2
Baba Masakazu; Ito Keita; Du Weijie; Sanai Tatsunori; Okamoto...
Journal of Applied Physics/114(12), 2013-09 - Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy
S. Koike; K. Toh; M. Baba; K. Toko; K. O. Hara; N. Usami; N. Sa...
Journal of Crystal Growth/378/pp.198-200, 2013-09 - Formation of large-grain-sized BaSi2 epitaxial layers on Si(111) grown by molecular beam epitaxy
M. Baba; K. Toh; K. Toko; Hara K. O.; Usami N.; Saito N.; Yoshi...
Journal of Crystal Growth/378/pp.193-197, 2013-09 - Epitaxial growth of ferromagnetic CoxFe4-xN thin films on SrTiO3 (001) and magnetic properties
Sanai Tatsunori; Ito Keita; Toko Kaoru; Suemasu Takashi
JOURNAL OF CRYSTAL GROWTH/378/pp.342-346, 2013-09 - The 17th International Conference on Molecular Beam Epitaxy Preface
Akimoto Katsuhiro; Suemasu Takashi; Okumura Hajime
JOURNAL OF CRYSTAL GROWTH/378/pp.3-4, 2013-09 - Lattice and grain-boundary diffusions of impurity atoms in BaSi2 epitaxial layers grown by molecular beam epitaxy
Nakamura K.; Toh K.; Baba M.; Khan M. Ajmal; Du W.; Toko K.; T....
Journal of Crystal Growth/378/pp.189-192, 2013-09 - Double-Layered Ge Thin Films on Insulators Formed by an Al-Induced Layer-Exchange Process
Toko Kaoru; Nakazawa Koki; Saitoh Noriyuki; Yoshizawa ...
CRYSTAL GROWTH & DESIGN/13(9)/pp.3908-3912, 2013-09 - Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
Baba Masakazu; Tsurekawa Sadahiro; Watanabe Kentaro; Du W.; T...
Applied Physics Letters/103(14), 2013-09 - Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy
Y. Funase; M. Suzuno; K. Toko; K. O. Hara; N. Usami; N. Saito; ...
Journal of Crystal Growth/378/pp.365-367, 2013-09 - Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells
M. Ajmal Khan; K. O. Hara; K. Nakamura; M. Baba; K. Toh; M. Su...
Journal of Crystal Growth/378/pp.201-204, 2013-07 - Epitaxial growth of CoxFe4-xN thin films on SrTiO3(001) by molecular beam epitaxy and their magnetic properties
T. Sanai; K. Ito; K. Toko; and T. Suemasu; +末益 崇
Journal of Crystal Growth/378/pp.342-346, 2013-07 - Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates
Toko Kaoru; Fukata Naoki; Nakazawa Koki; Kurosawa Masashi; Us...
Journal of Crystal Growth/372/pp.189-192, 2013-06 - Large-grained polycrystalline (111) Ge films on insulators by thickness-controlled Al-induced crystallization
Nakazawa K.; Toko Kaoru; Saitoh N.; Yoshizawa N.; Usami N.; Su...
ESC Journal of Solid State Science and Technology/2(11)/pp.Q195-Q199, 2013-06 - Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation
Kosuke O. Hara; Yusuke Hoshi; Noritaka Usami; Yasuhiro Shira...
Thin Solid Films/534/pp.470-473, 2013-05 - Formation of polycrystalline BaSi2 films by radio-frequency magnetron sputtering for thin-film solar cell applications
T. Yoneyama; A. Okada; M. Suzuno; T. Shibutam; K. Matsumaru; N...
Thin Solid Films/534/pp.116-119, 2013-05 - Hard X-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi2
Baba Masakazu; Toko Kaoru; Suemasu Takashi
J. Appl. Phys., 2013 - Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization
Numata Ryohei; Toko Kaoru; Saitoh Noriyuki; Yoshizawa Noriko...
Crystal Growth and Design/13(4)/pp.1767-1770, 2013-04 - Enhanced p-type Conductivity and Band Gap Narrowing in Heavily B-doped p-BaSi2 Films Grown by Molecular Beam Epitaxy
Khan M. Ajmal; Hara K. O.; Du W.; Baba M.; Nakamura K.; Suzuno...
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)/pp.1357-1360, 2013 - Characterization of Grain Boundary Properties in BaSi2 Epitaxial Films on Si(111) and Si(001) by Kelvin Probe Force Microscopy
Baba Masakazu; Tsurekawa Sadahiro; Nakamura Kotaro; Du...
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)/pp.535-538, 2013 - Determination of bulk minority-carrier lifetime in BaSi2 films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing
Hara O. kosuke; Toko Kaoru; Suemasu Takashi
Appl. Phys. Express/6/pp.112302-1-112302-4, 2013 - more...
- Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates