SUEMASU Takashi
- Articles
- Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy
Baba Masakazu; Toko Kaoru; Suemasu Takashi
Appl. Phys. Lett./103, 2013 - Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)
Nakamura Kotaro; Toko Kaoru; Suemasu Takashi
J. Appl. Phys., 2013 - In-situ heavily p-type doping of over 10(20) cm(-3) in semiconducting BaSi2 thin films for solar cells applications
Khan M. Ajmal; Hara K. O.; Du W.; Baba M.; Nakamura K.; S...
APPLIED PHYSICS LETTERS/102(11), 2013-03 - Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)
Nakamura K.; Baba M.; Khan M. Ajmal; Du W.; Sasase M.; Ha...
JOURNAL OF APPLIED PHYSICS/113(5), 2013-02 - Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness
Okada Atsushi; Toko Kaoru; Hara Kosuke O.; Usami Noritak...
JOURNAL OF CRYSTAL GROWTH/356/pp.65-69, 2012-10 - Molecular beam epitaxy of CoxFe4-xN (0.4 < x < 2.9) thin films on SrTiO3(001) substrates
Sanai Tatsunori; Ito Keita; Toko Kaoru; Suemasu Takashi
JOURNAL OF CRYSTAL GROWTH/357/pp.53-57, 2012-10 - Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate
Hara Kosuke O.; Usami Noritaka; Toh Katsuaki; Toko K...
Jpn J Appl Phys/51(10)/pp.10NB06-10NB06-5, 2012-10 - Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy
M. Ajmal Khan; T. Saito; K. Nakamura; M. Baba; W. Du; K. ...
Thin Solid Films/522/p.95, 2012-10 - Investigation of the Recombination Mechanism of Excess Carriers in Undoped BaSi2 Films on Silicon
Kosuke O. Hara; Noritaka Usami; Katsuaki Toh; Masakazu B...
Journal of Applied Physics/111/p.83108, 2012-10 - Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4um on Si(111)
Baba Masakazu; Nakamura Kotaro; Du Weijie; Khan M. Ajmal; Koi...
Japanese Journal of Applied Physics/51(9)/p.098003, 2012-09 - Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
Toh Katsuaki; Hara Kosuke O.; Usami Noritaka; Saito Noriyuki...
JAPANESE JOURNAL OF APPLIED PHYSICS/51(9), 2012-09 - Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization
Toko K.; Kurosawa M.; Saitoh N.; Yoshizawa N.; Usami N.; Miyao...
APPLIED PHYSICS LETTERS/101(7)/p.072106, 2012-08 - Negative spin polarization at the Fermi level in Fe4N epitaxial films by spin-resolved photoelectron spectroscopy
Ito Keita; Okamoto Kazuaki; Harada Kazunori; Sanai Tatsu...
JOURNAL OF APPLIED PHYSICS/112(1), 2012-07 - Negative spin polarization of Fe4N epitaxial films by spin-resolved photoelectron spectroscopy
K. Ito; K. Okamoto; K. Harada; T. Sanai; K. Toko; S. Ued...
Journal of Applied Physics/112(013911), 2012-07 - Molecular beam epitaxy of CoxFe4-xN (0.4 < x < 2.9) thin films on SrTiO3(001) substrates
Suemasu Takashi
Journal of Crystal Growth, 2012-07 - Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique
Baba Masakazu; Toh Katsuaki; Toko Kaoru; Saito Noriyuki; Yosh...
JOURNAL OF CRYSTAL GROWTH/348(1)/pp.75-79, 2012-06 - Negative Anisotropic Magnetoresistance in gamma '-Fe4N Epitaxial Films on SrTiO3(001) Grown by Molecular Beam Epitaxy
Ito Keita; Kabara Kazuki; Takahashi Hirokazu; Sanai Tatsunor...
JAPANESE JOURNAL OF APPLIED PHYSICS/51(6:Part 1), 2012-06 - 新材料BaSi2を用いたレアアースレス薄膜結晶太陽電池を目指して
末益 崇
光アライアンス/23(6)/p.11-14, 2012-05 - Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells
Du Weijie; Suzuno Mitsushi; Khan M. Ajmal; Toh Katsuaki; ...
APPLIED PHYSICS LETTERS/100(15), 2012-04 - Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates
Toh Katsuaki; Hara Kosuke O.; Usami Noritaka; Saito Noriyuki...
JOURNAL OF CRYSTAL GROWTH/345(1)/pp.16-21, 2012-04 - Investigation of the Recombination Mechanism of Excess Carriers in Undoped BaSi2 Films on Silicon
Hara O. Kosuke; Toko Kaoru; Suemasu Takashi
J. Appl. Phys., 2012 - Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2 Overlayers
Du Weijie; Saito Takanobu; Khan Muhammad Ajmal; Toko Kaoru; U...
JAPANESE JOURNAL OF APPLIED PHYSICS/51(4:Part 2::SI)/pp.04DP01-04DP01-4, 2012-04 - Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates
Suemasu Takashi
Journal of Crystal Growth/345/pp.16-21, 2012-02 - Control of crystal orientation in Al-induced crystallized poly Si layers by SiO2 intermedite layer
A. Okada; K. Toko; K.O. Hara; N. Usami; and T. Suemasu; +...
Journal of Crystal Growth/356/p.65, 2012-01 - Epitaxy of Orthorhombic BaSi2 with Preferred in-Plane Crystal Orientation on Si(001): Influence of Vicinal Substrate and Annealing Temperature
K. Hara; N. Usami; N. Saito; N. Yoshizawa; K. Toko; T. S...
Japanese Journal of Applied Physics/51(95501), 2012-01 - more...
- Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy