SUEMASU Takashi
- Articles
- Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
TSUKADA Dai; MATSUMOTO Yuta; SASAKI Ryo; TAKEISHI Michit...
Applied physics express/2(5)/pp.51601-1, 2009-05 - Spin polarization of Fe4N thin films determined by point-contact Andreev reflection
Narahara A.; Ito K.; Suemasu T.; Takahashi Y. K.; Ranajik...
APPLIED PHYSICS LETTERS/94(20)/pp.0-0, 2009-05 - p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 mu m electroluminescence of 0.4 mW at room temperature
Suzuno Mitsushi; Koizumi Tomoaki; Suemasu Takashi
APPLIED PHYSICS LETTERS/94(21)/pp.0-0, 2009-05 - Photoresponse Properties of Polycrystalline BaSi2 Films Grown on SiO2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
Tsukada Dai; Matsumoto Yuta; Sasaki Ryo; Takeishi Michit...
APPLIED PHYSICS EXPRESS/2(5)/pp.0-0, 2009-05 - Observation of Initial Single Crystallization in InGaAs Bulk Crystals Grown by the Traveling Liquidus-Zone (TLZ) Method
金子 将士; 木下 恭一; 末益 崇; 小田原 修; 依田 眞一
JASMA/26(2)/pp.95-99, 2009-04 - Growth of ferromagnetic Fe4N epitaxial layers and a-axis-oriented Fe4N/MgO/Fe magnetic tunnel junction on MgO(001) substrates using molecular beam epitaxy
Narahara A.; Ito K.; Suemasu T.
JOURNAL OF CRYSTAL GROWTH/311(6)/pp.1616-1619, 2009-03 - Photoresponse Properties of Semiconducting BaSi2 Films Epitaxially Grown on Si(111) by Molecular Beam Epitaxy
Y. Matsumoto; D. Tsukada; R. Sasaki; M. Takeishi; T. Sue...
Applied Physics Express/2/p.021101, 2009-02 - Growth of manganese silicide layers on Si substrates using MnCl2 source
Hu Junhua; Kurokawa Takanori; Suemasu Takashi; Takahara S...
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE/206(2)/pp.233-237, 2009-02 - Photoresponse Properties of Semiconducting BaSi2 Epitaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy
Matsumoto Yuta; Tsukada Dai; Sasaki Ryo; Takeishi Mitsutomo; ...
APPLIED PHYSICS EXPRESS/2(2)/pp.0-0, 2009-02 - Photoresponse Properties of Semiconducting BaSi2 Grown on SiO2 Substrates Using (111)-Oriented Si Layers by an Aluminum-induced Crystallization Method
D. Tsukada; Y. Matsumoto; R. Sasaki; M. Takeishi; T. Sai...
Applied Physics Express/2/p.051601, 2009-01 - Growth of Ca-Germanide and Ca-Silicide Crystals by Mechanical Alloying
Y. Warashina; Y. Ito; T. Nakamura; H. Tatsuoka; J. Snyde...
e-Journal of Surface Science and Nanotechnology/7/p.129, 2009-01 - Sb Surfactant Effect on Defect Evolution in Compressively Strained In0.80Ga0.20As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy
Sato Tomonari; Kondo Yasuhiro; Sekiguchi Takashi; Suemasu...
APPLIED PHYSICS EXPRESS/1(11)/pp.0-0, 2008-11 - Sb Surfactant Effect on Defect Evolution in Compressively Strained In_<0.80>Ga_<0.20>As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy
SATO Tomonari; KONDO Yasuhiro; SEKIGUCHI Takashi; SUEMASU...
Applied physics express/1(11)/pp.111202-1, 2008-11 - Investigation on Single Crystallization Mechanism in InGaAs Bulk Crystal Grown by the Traveling Liquidus-Zone (TLZ) Method
金子 将士; 末益 崇; 木下 恭一; 依田 眞一; 小田原 修
JASMA : Journal of the Japan Society of Microgravity Application/25(4)/p.725, 2008-10 - Molecular beam epitaxy of semiconductor (BaSi2)metal (CoSi2) hybrid structures on Si(111) substrates for photovoltaic application
Ichikawa Y.; Kobayashi M.; Sasase M.; Suemasu T.
APPLIED SURFACE SCIENCE/254(23)/pp.7963-7967, 2008-09 - Fabrication and Current-Voltage Characteristics of Fe3Si/CaF2/Fe3Si Magnetic Tunnel Junction
Harianto Teddy; Sadakuni Kenji; Akinaga Hiro; Suemasu Ta...
JAPANESE JOURNAL OF APPLIED PHYSICS/47(8:Part 1)/pp.6310-6311, 2008-08 - Fabrication and Current–Voltage Characteristics of Fe3Si/CaF2/Fe3Si Magnetic Tunnel Junction
Harianto Teddy; Sadakuni Kenji; Akinaga Hiro; Suemasu Ta...
Jpn J Appl Phys/47(8)/pp.6310-6311, 2008-08 - Control of electron and hole concentrations in semiconducting silicide BaSi2 with impurities grown by molecular beam epitaxy
Kobayashi Michitaka.; Matsumoto Yuta; Ichikawa Yoshitake; Ts...
APPLIED PHYSICS EXPRESS/1(5)/pp.0-0, 2008-05 - Room-Temperature 1.6μm Electroluminescence from p^+-Si/β-FeSi_2/n^+-Si Diodes on Si(001) without High-Temperature Annealing
Koizumi Tomoaki; Murase Shigemitsu; Suzuno Mitsushi; Suem...
APPLIED PHYSICS EXPRESS/1(5)/pp.0-0, 2008-05 - Lifetime and diffusion length of photogenerated minority carriers in single-crystalline n-type beta-FeSi2 bulk
Ootsuka Teruhisa; Suemasu Takashi; Chen Jun; Sekiguchi T...
APPLIED PHYSICS LETTERS/92(19)/pp.0-0, 2008-05 - Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(111) substrates by molecular beam epitaxy
Suemasu Takashi; Sasase Masato; Ichikawa Yoshitake; Kobay...
JOURNAL OF CRYSTAL GROWTH/310(6)/pp.1250-1255, 2008-03 - Improved Room-Temperature 1.6μm Electroluminescence from p-Si/β-FeSi_2/n-Si Double Heterostructures Light-Emitting Diodes
SUZUNO Mitsushi; MURASE Shigemitsu; KOIZUMI Tomoaki; SUEM...
Applied physics express/1(2)/pp.21403-1, 2008-02 - Improved room-temperature 1.6 mu m electroluminescence from p-Si/beta-FeSi2/n-Si double heterostructures light-emitting diodes
Suzuno Mitsushi; Murase Shigemitsu; Koizumi Tomoaki; Suem...
APPLIED PHYSICS EXPRESS/1(2)/pp.0-0, 2008-02 - Molecular beam epitaxy of semiconductor(BaSi2)/metal(CoSi2) hybrid structures on Si(111) substrates for photovoltaic applicati
Y. Ichikawa; M. Kobayashi; M. Sasase; T. Suemasu
Applied Surface Science/254/p.7963-7967, 2008-01 - Carrier lifetime and diffusion length of photo-generated minority carriers in n-type β-FeSi2 single crystals
T. Ootsuka; T. Suemasu; J. Chen; T. Sekiguchi; Y. Hara
Applied Physics Letters/92/p.192114, 2008-01 - more...
- Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method