SUEMASU Takashi
- Articles
- Evaluation of minority-carrier diffusion length in n-type beta-FeSi2 single crystals by electron-beam-induced current
Ootsuka Teruhisa; Suemasu Takashi; Chen Jun; Sekiguchi T...
APPLIED PHYSICS LETTERS/92(4)/pp.0-0, 2008-01 - Growth of highly oriented crystalline alpha-Fe/AlN/Fe3N trilayer structures on Si(111) substrates by molecular beam epitaxy
Narahara Akari; Yamaguchi Kimiaki; Suemasu Takashi
JOURNAL OF CRYSTAL GROWTH/309(1)/pp.25-29, 2007-11 - Effect of using a high-purity Fe source on the transport properties of p-type beta-FeSi2 grown by molecular-beam epitaxy
Suzuno M.; Ugajin Y.; Murase S.; Suemasu T.; Uchikoshi M...
JOURNAL OF APPLIED PHYSICS/102(10)/pp.103706 (5 pages)-0, 2007-11 - Epitaxial growth and magnetic properties of Fe3Si/CaF2/Fe3Si tunnel junction structures on CaF2/Si(111)
Harianto Teddy; Kobayashi Ken'ichi; Suemasu Takashi; Akin...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/46(36-40)/pp.0-0, 2007-10 - Growth of nitride-based Fe3N/AIN/Fe4N magnetic tunnel junction structures on si(111) substrates
Narahara Akari; Suemasu Takashi
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/46(36-40)/pp.0-0, 2007-10 - Photoresponse properties of Al/n-beta-FeSi2 Schottky diodes using beta-FeSi2 single crystals
Ootsuka Teruhisa; Fudamoto Yasunori; Osamura Masato; Suem...
APPLIED PHYSICS LETTERS/91(14)/pp.0-0, 2007-10 - Si-Based Infrared Light Emitters Using Semiconducting Iron Disilicide
SUEMASU Takashi; MURASE Shigemitsu; UGAJIN Yuta; SUZUNO ...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2007(0)/pp.54-55, 2007-09 - Epitaxial growth of Fe3Si/CaF2/Fe3Si magnetic tunnel junction structures on CaF2/Si(111) by molecular beam epitaxy
Kobayashi Ken'ichi; Suemasu Takashi; Kuwano Noriyuki; Har...
THIN SOLID FILMS/515(22)/pp.8254-8258, 2007-08 - Preparation of beta-FeSi2 substrates by molten salt method
Okubo M.; Ohishi T.; Mishina A.; Yamauchi I.; Udono H.; S...
THIN SOLID FILMS/515(22)/pp.8268-8271, 2007-08 - Effects of Sr addition on crystallinity and optical absorption edges in ternary semiconducting silicide Ba1-xSrxSi2
Morita Kousuke; Kobayashi Michitaka; Suemasu Takashi
THIN SOLID FILMS/515(22)/pp.8216-8218, 2007-08 - Photoluminescence decay time and electroluminescence of p-Si/beta-FeSi2 particles/n-Si and p-Si/beta-FeSi2 film/n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy
Suemasu T.; Ugajin Y.; Murase S.; Sunohara T.; Suzuno M.
JOURNAL OF APPLIED PHYSICS/101(12)/pp.124506 (6pages)-0, 2007-06 - Molecular beam epitaxy of band gap tunable ternary semiconducting silicides Ba1-xSrxSi2 for photovoltaic application
Suemasu T.; Morita K.; Kobayashi M.
JOURNAL OF CRYSTAL GROWTH/301/pp.680-683, 2007-04 - Epitaxial growth of ferromagnetic Fe3N films on Si(111) substrates by molecular beam epitaxy
Yamaguchi K.; Yui T.; Yamaki K.; Kakeya I.; Kadowaki K.; ...
JOURNAL OF CRYSTAL GROWTH/301/pp.597-601, 2007-04 - Current status and future prospects of semiconducting alkaline-earth-metal silicides
末益 崇; 今井 庸二
應用物理/76(3)/pp.264-268, 2007-03 - Reactive ion etching of β-FeSi2 film in inductively coupled plasma
T. Wakayama; T. Suemasu; T. Kanazawa; H. Akinaga
Thin Solid Films/515/p.8166-8168, 2007-01 - Epitaxial Growth and Magnetic Properties of Fe3Si/CaF2/Fe3Si Tunnel Junction Structures on CaF2/Si(111)
T. Harianto; K. Kobayashi; T. Suemasu; H. Akinaga
Japanese Journal of Applied Physics/46(37)/p.L904-L906, 2007-01 - Epitaxial growth an luminescence characterization of Si/β-FeSi2/Si double heterostructures light-emitting diodes
末益 崇
Proceedings of MRS 2006 Fall Meetings/958/p.L01-05, 2007-01 - Crystal Growth of β-FeSi2 on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates
末益 崇
Proceedings of MRS 2006 Fall Meetings/980/p.II05-47, 2007-01 - Growth of Nitride-Based Fe3N/AlN/Fe4N Mangetic Tunnel Junction Structures on Si(111) Substrates
A. Narahara; T.Suemasu; +末益 崇
Japanese Journal of Applied Physics/46(37)/p.L892-L894, 2007-01 - Epitaxial growth and magnetic properties of ferromagnetic Fe3N on Si(111) by molecular beam epitaxy using AlN/3C-SiC intermediate layers
Yamaguchi Kimiaki; Yui Tatsuya; Ichikawa Yoshitake; Yamak...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/45(24-28)/pp.L705-L707, 2006-07 - Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes
Li Cheng; Lai Hongkai; Chen Songyan; Suemasu T.; Hasegawa...
JOURNAL OF APPLIED PHYSICS/100(2)/pp.0-0, 2006-07 - Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy
Morita K; Inomata Y; Suemasu T
THIN SOLID FILMS/508(1-2)/pp.363-366, 2006-06 - Reactive ion etching of beta-FeSi2 with inductively coupled plasma
Wakayama Takayuki; Suemasu Takashi; Kanazawa Tomomi; Akin...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/45(20-23)/pp.L569-L571, 2006-06 - Band diagrams of BaSi2/Si structure by Kelvin probe and current-voltage characteristics
Suemasu Takashi; Morita Kousuke; Kobayashi Michitaka; Sai...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/45(20-23)/pp.0-0, 2006-06 - Annealing temperature dependence of EL properties of Si/beta-FeSi2/Si(111) double-heterostructures light-emitting diodes
Ugajin Y; Takauji M; Suemasu T
THIN SOLID FILMS/508(1-2)/pp.376-379, 2006-06 - more...
- Evaluation of minority-carrier diffusion length in n-type beta-FeSi2 single crystals by electron-beam-induced current