SUEMASU Takashi

Researcher's full information

Articles

• Growth of Si/beta-FeSi2/Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements
  Takauji M; Seki N; Suemasu T; Hasegawa F; Ichida M
  JOURNAL OF APPLIED PHYSICS/96(5)/pp.2561-2565, 2004-09
• Fabrication of p-Si/β-FeSi_2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
  TAKAUJI Motoki; LI Cheng; SUEMASU Takashi; HASEGAWA Fumio
  Extended abstracts of the ... Conference on Solid State Devices and Materials/2004(0)/pp.820-821, 2004-09
  
  CiNii
• Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN
  Suzuki M; Sato T; Suemasu T; Hasegawa F
  PHYSICA STATUS SOLIDI A-APPLIED RESEARCH/201(12)/pp.2782-2785, 2004-09
• Reflection and absorption spectra of beta-FeSi2 under pressure
  Mori Y; Sumida Y; Takarabe K; Suemasu T; Hasegawa F; Udono H; K...
  THIN SOLID FILMS/461(1)/pp.171-173, 2004-08
• Epitaxial growth of semiconducting beta-FeSi2 and its application to light-emitting diodes
  Suemasu T; Takakura K; Li C; Ozawa Y; Kumagai Y; Hasegawa F
  THIN SOLID FILMS/461(1)/pp.209-218, 2004-08
• Time-resolved photoluminescence study of Si/beta-FeSi2/Si structures grown by molecular beam epitaxy
  Suemasu T; Takauji M; Li C; Ozawa Y; Ichida M; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(7A)/pp.0-0, 2004-07
• Epitaxial growth of semiconducting BaSi2 thin films on Si(111) substrates by reactive deposition epitaxy
  Inomata Y; Nakamura T; Suemasu T; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS/43(7A)/pp.4155-4156, 2004-07
  
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• Molecular beam epitaxy of highly [100]-oriented beta-FeSi2 films on lattice-matched strained-Si(001) surface using Si0.7Ge0.3 layers
  Saito T; Suemasu T; Yamaguchi K; Mizushima K; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(7B)/pp.L957-L959, 2004-07
  
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• Epitaxial growth of Si-based ternary alloy semiconductor Ba1-xSrxSi2 films on Si(III) substrates by molecular beam epitaxy
  Inomata Y; Suemasu T; Izawa T; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(6B)/pp.0-0, 2004-06
  
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• 第51回応用物理学関係連合講演会(2004年)
  八井 浄; 進藤 春雄; 田村 收; 伊藤 雅英; 馬場 俊彦; 勝山 俊夫; 藤田 安彦; 小笠原 宗博; 三木...
  應用物理/73(6)/pp.788-826, 2004-06
  
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• Influence of beta-FeSi2 particle size and Si growth rate on 1.5 mu m photoluminescence from Si/beta-FeSi2-particles/Si structures grown by molecular-beam epitaxy
  Ozawa Y; Ohtsuka T; Li C; Suemasu T; Hasegawa F
  JOURNAL OF APPLIED PHYSICS/95(10)/pp.5483-5486, 2004-05
• Epitaxial growth of semiconducting BaSi2 films on Si(III) substrates by molecular beam epitaxy
  Inomata Y; Nakamura T; Suemasu T; Hasegawa F
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(4A)/pp.0-0, 2004-04
  
  CiNii
• Growth of epitaxial beta-FeSi2 thin film on Si(001) by metal-organic chemical vapor deposition
  Akiyama K; Kimura T; Suemasu T; Hasegawa F; Maeda Y; Funa...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/43(4B)/pp.0-0, 2004-04
  
  CiNii
• Influence of AlN growth conditions on the polarity of GaN grown on AlN/Si(111) by metalorganic molecular beam epitaxy
  Yamaguchi K; Tomioka H; Sato T; Souda R; Suemasu T; Haseg...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS/43(2A)/pp.0-0, 2004-02
• Influence of AlN Growth Conditions on the Polarity of GaN Grown on AlN/Si(111) by Metal Organic Molecular Beam Epitaxy
  末益 崇
  Jpn. J. Appl. Phys./43(2A)/p.L151-L153, 2004-01
• Disagreement between Magnetic and Magneto-Optical Properties in Cr-doped GaN Films on Si(111) Substrates Grown by Metal Organic Molecular Beam Epitaxy
  末益 崇
  Jpn.J.Appl.Phys./43(10A)/p.L1312-L1314, 2004-01
• Room-temperature ferromagnetism in Cr-doped GaN films grown by MOMBE on GaAs(111)A substrates
  末益 崇
  phys.stat.sol.(c)/(7)/p.2860-2863, 2003-01
• Comparison of donor and acceptor levels in undoped, high quality β-FeSi₂ films grown by MBE and multi-layer method
  末益 崇
  Int.J.Modern Physics B/16(2829)/p.4314-4317, 2003-01
• Conduction type and defect levels of β-FeSi₂ films grown by MBE with different Si/Fe ratios
  末益 崇
  *EMPTY*/6(5,6)/p.307-309, 2003-01
• Influence of boron-doped Si cap layer on the photoluminescence of β-FeSi2 particles enbedded in Si matrix
  末益 崇
  Journal of Applied Physics/94(3)/p.1518-1520, 2003-01
• 鉄シリサイドLED－光インターコネクション用光源を目指して－
  末益 崇
  オプトロニクス/15(5)/p.13-18, 2003-01
• 鉄シリサイド光デバイスの最前線 (特集 機能に富んだ材料シリコン)
  末益 崇; 長谷川 文夫
  Materials integration/15(5)/pp.13-18, 2002-05
  
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• Present Status and Future Prospects of β-FeSi_2 : An Environmentally Friendly Semiconductor
  末益 崇; 長谷川 文夫
  まてりあ : 日本金属学会会報/41(5)/pp.342-347, 2002-05
  
  CiNii
• Growth parameter dependence of HVPE GaN and Polarity and Crystal Quality of the Grown Layers
  末益 崇
  J. Crystal Growth/(Vol237-239)/p.1089-1093, 2002-01
• Optical properties of β-FeSi₂ under pressure
  末益 崇
  Physical Review B/(Vol65)/p.165215, 2002-01
• more...