SUEMASU Takashi
- Articles
- Investigation of direct and indirect bandgaps of [100]-oriented nearly strain-free β-FeSi2 films groun by molecular beam epitaxy
末益 崇
Appl. Phys. Lett./(Vol. 80)/p.No. 4, 556-558, 2002-01 - Structure Analysis of FeSi_2 Embeded in Si by Transmission Electron Microscopy
知京 豊裕; 成毛 環美; アヘメト パールハット; 朱 敏; 末益 崇; 長谷川 文夫
まてりあ : 日本金属学会会報/40(12)/p.1013, 2001-12 - Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
HIROI Noriyoshi; SUEMASU Takashi; TAKAKURA Ken'ichiro; SE...
Japanese journal of applied physics. Pt. 2, Letters/40(10)/pp.L1008-L1011, 2001-10 - Donor and Acceptor Levels in Undoped β-FeSi_2 Films Grown on Si (001) Substrates : Semiconductors
TAKAKURA Ken-ichiro; SUEMASU Takashi; HASEGAWA Fumio
Japanese journal of applied physics. Pt. 2, Letters/40(3)/pp.L249-L251, 2001-03 - Donor and Acceptor Levels of Undoped β-FeSi2 Films Grown on Si(001)Substrates
末益 崇
Japanese Journal of Applied Physics/40(3B)/p.L249-L251, 2001-01 - Optical absorption spectra of β-FeSi2 under pressure
末益 崇
Physical and Status Solidi(b)/223/p.259-263, 2001-01 - Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes
末益 崇
Appl. Phys. Lett./(Vol. 79)/p.No. 12, 1804-1806, 2001-01 - 鉄シリサイドβ-FeSi2を活性領域とするSi系LEDの室温発光-Si ICの光配線用光源を目指して
末益 崇
真空ジャーナル/75(3)/p.5-9, 2001-01 - Dependence of photoluminescence from β-FeSi2 and induced deep levels in Si on the size of embedded β-FeSi2 balls in Si
末益 崇
Thin Solid Films/381/p.209-213, 2001-01 - Direct Growth of [100]-Oriented β-FeSi2 Films on Si(001) Sustrates by Molecular Beam Epitaxy
末益 崇
Jpn. J. Appl. Phys./(Vol. 40)/p.No. 10A, L1008-L1011, 2001-01 - Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
TAKAKURA Ken-ichiro; SUEMASU Takashi; IKURA Yoshihiro; HA...
Japanese journal of applied physics. Pt. 2, Letters/39(8)/pp.L789-L791, 2000-08 - Current status future prospects of β-FeSi_2 research:An environmentally friendly and direct-band-gap semiconductor
末益 崇; 長谷川 文夫
應用物理/69(7)/pp.804-810, 2000-07 - One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000℃ on GaAs (111) Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
HASEGAWA Fumio; MINAMI Masato; SUEMASU Takashi
IEICE transactions on electronics/83(4)/pp.633-638, 2000-04 - Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing
TAKAKURA Ken-ichiro; SUEMASU Takashi; HIROI Noriyoshi; HA...
Japanese journal of applied physics. Pt. 2, Letters/39(3)/pp.L233-L236, 2000-03 - Fabrication of β-FeSi_2 Spheres embeddes in Si by Molecular Beam Epitaxy and Enhancement of the Infrared Photoluminescence by High Temperature Annealing
末益 崇; 飯倉 祐介; 高倉 健一郎; 長谷川 文夫
The Review of laser engineering/28(2)/pp.99-102, 2000-02 - CBE Growth of GaN on GaAs(001) and (111)B Substrates Using Monomethylhydrazine
末益 崇
Journal of Crystal Growth/209(2-3)/p.373-377, 2000-01 - 熱反応堆積法を利用した赤外発光β-FeSi2球及び高移動度β-FeSi2膜の作製:高温アニールによる特性改善 (〈特集〉環境半導体)
末益 崇; 高倉 健一郎; 飯倉 祐介
Journal of the Materials Science Society of Japan/37(1)/pp.16-20, 2000-01 - One Possibility of Obtaining Bulk GaN : halide VPE Growth at 1000℃ on GaAs(111) Substrates
末益 崇
IEICE Trans. Electron./83-C(4)/p.633-638, 2000-01 - Optimum annealing condition for 1.5μm photoluminescence from reactive deposition epitaxy β-FeSi2 balls embedded in Si crystals
末益 崇
Journal of Luminescence/87-89/p.528-531, 2000-01 - Room Temperature 1.6μm Electroluminescence from a Si-Based Light-Emitling Diode with β-FeSi2 Active Region
末益 崇
Japanese Journal of Applied Physics/39(10B)/p.L1013-L1015, 2000-01 - 熱反応堆積法を利用した赤外発光β-FeSi2球及び高移動度β-FeSi2 膜の作製:高温アニールによる特性改善
末益 崇
材料科学/37(1)/p.16-20, 2000-01 - 環境にやさしい直接遷移型半導体β-FeSi2の研究の現状と将来展望
末益 崇
応用物理/39(7)/p.804-816, 2000-01 - Control of the conduction Type of Nondoped High Mobility β-FeSi2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
末益 崇
Japanese Journal of Applied Physics/39(8A)/p.L789-L781, 2000-01 - Growth of Mn-Doped β-FeSi2 Films on Si(001) by Reactive Deposition Epitaxy
末益 崇
Thin Solid Films/369(1-2)/p.253-256, 2000-01 - Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
Suemasu Takashi; Hiroi Noriyoshi; Fujii Tetsuo; Takakura ...
Japanese journal of applied physics. Pt. 2, Letters/38(8)/pp.L878-L881, 1999-08 - more...
- Investigation of direct and indirect bandgaps of [100]-oriented nearly strain-free β-FeSi2 films groun by molecular beam epitaxy