SUEMASU Takashi
- Articles
- Influence of AlN growth conditions on the polarity of GaN grown on AlN/Si(111) by metalorganic molecular beam epitaxy
Yamaguchi K; Tomioka H; Sato T; Souda R; Suemasu T; Haseg...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS/43(2A)/pp.0-0, 2004-02 - Influence of AlN Growth Conditions on the Polarity of GaN Grown on AlN/Si(111) by Metal Organic Molecular Beam Epitaxy
末益 崇
Jpn. J. Appl. Phys./43(2A)/p.L151-L153, 2004-01 - Disagreement between Magnetic and Magneto-Optical Properties in Cr-doped GaN Films on Si(111) Substrates Grown by Metal Organic Molecular Beam Epitaxy
末益 崇
Jpn.J.Appl.Phys./43(10A)/p.L1312-L1314, 2004-01 - Room-temperature ferromagnetism in Cr-doped GaN films grown by MOMBE on GaAs(111)A substrates
末益 崇
phys.stat.sol.(c)/(7)/p.2860-2863, 2003-01 - Comparison of donor and acceptor levels in undoped, high quality β-FeSi2 films grown by MBE and multi-layer method
末益 崇
Int.J.Modern Physics B/16(2829)/p.4314-4317, 2003-01 - Conduction type and defect levels of β-FeSi2 films grown by MBE with different Si/Fe ratios
末益 崇
*EMPTY*/6(5,6)/p.307-309, 2003-01 - Influence of boron-doped Si cap layer on the photoluminescence of β-FeSi2 particles enbedded in Si matrix
末益 崇
Journal of Applied Physics/94(3)/p.1518-1520, 2003-01 - 鉄シリサイドLED－光インターコネクション用光源を目指して－
末益 崇
オプトロニクス/15(5)/p.13-18, 2003-01 - 鉄シリサイド光デバイスの最前線 (特集 機能に富んだ材料シリコン)
末益 崇; 長谷川 文夫
Materials integration/15(5)/pp.13-18, 2002-05 - Present Status and Future Prospects of β-FeSi_2 : An Environmentally Friendly Semiconductor
末益 崇; 長谷川 文夫
まてりあ : 日本金属学会会報/41(5)/pp.342-347, 2002-05 - Growth parameter dependence of HVPE GaN and Polarity and Crystal Quality of the Grown Layers
末益 崇
J. Crystal Growth/(Vol237-239)/p.1089-1093, 2002-01 - Optical properties of β-FeSi2 under pressure
末益 崇
Physical Review B/(Vol65)/p.165215, 2002-01 - Investigation of direct and indirect bandgaps of [100]-oriented nearly strain-free β-FeSi2 films groun by molecular beam epitaxy
末益 崇
Appl. Phys. Lett./(Vol. 80)/p.No. 4, 556-558, 2002-01 - Structure Analysis of FeSi_2 Embeded in Si by Transmission Electron Microscopy
知京 豊裕; 成毛 環美; アヘメト パールハット; 朱 敏; 末益 崇; 長谷川 文夫
まてりあ : 日本金属学会会報/40(12)/p.1013, 2001-12 - Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
HIROI Noriyoshi; SUEMASU Takashi; TAKAKURA Ken'ichiro; SE...
Japanese journal of applied physics. Pt. 2, Letters/40(10)/pp.L1008-L1011, 2001-10 - Donor and Acceptor Levels in Undoped β-FeSi_2 Films Grown on Si (001) Substrates : Semiconductors
TAKAKURA Ken-ichiro; SUEMASU Takashi; HASEGAWA Fumio
Japanese journal of applied physics. Pt. 2, Letters/40(3)/pp.L249-L251, 2001-03 - Donor and Acceptor Levels of Undoped β-FeSi2 Films Grown on Si(001)Substrates
末益 崇
Japanese Journal of Applied Physics/40(3B)/p.L249-L251, 2001-01 - Optical absorption spectra of β-FeSi2 under pressure
末益 崇
Physical and Status Solidi(b)/223/p.259-263, 2001-01 - Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes
末益 崇
Appl. Phys. Lett./(Vol. 79)/p.No. 12, 1804-1806, 2001-01 - 鉄シリサイドβ-FeSi2を活性領域とするSi系LEDの室温発光-Si ICの光配線用光源を目指して
末益 崇
真空ジャーナル/75(3)/p.5-9, 2001-01 - Dependence of photoluminescence from β-FeSi2 and induced deep levels in Si on the size of embedded β-FeSi2 balls in Si
末益 崇
Thin Solid Films/381/p.209-213, 2001-01 - Direct Growth of [100]-Oriented β-FeSi2 Films on Si(001) Sustrates by Molecular Beam Epitaxy
末益 崇
Jpn. J. Appl. Phys./(Vol. 40)/p.No. 10A, L1008-L1011, 2001-01 - Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
TAKAKURA Ken-ichiro; SUEMASU Takashi; IKURA Yoshihiro; HA...
Japanese journal of applied physics. Pt. 2, Letters/39(8)/pp.L789-L791, 2000-08 - Current status future prospects of β-FeSi_2 research:An environmentally friendly and direct-band-gap semiconductor
末益 崇; 長谷川 文夫
應用物理/69(7)/pp.804-810, 2000-07 - One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000℃ on GaAs (111) Substrates(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
HASEGAWA Fumio; MINAMI Masato; SUEMASU Takashi
IEICE transactions on electronics/83(4)/pp.633-638, 2000-04 - more...
- Influence of AlN growth conditions on the polarity of GaN grown on AlN/Si(111) by metalorganic molecular beam epitaxy