SUEMASU Takashi
- Articles
- Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing
TAKAKURA Ken-ichiro; SUEMASU Takashi; HIROI Noriyoshi; HA...
Japanese journal of applied physics. Pt. 2, Letters/39(3)/pp.L233-L236, 2000-03 - Fabrication of β-FeSi_2 Spheres embeddes in Si by Molecular Beam Epitaxy and Enhancement of the Infrared Photoluminescence by High Temperature Annealing
末益 崇; 飯倉 祐介; 高倉 健一郎; 長谷川 文夫
The Review of laser engineering/28(2)/pp.99-102, 2000-02 - CBE Growth of GaN on GaAs(001) and (111)B Substrates Using Monomethylhydrazine
末益 崇
Journal of Crystal Growth/209(2-3)/p.373-377, 2000-01 - 熱反応堆積法を利用した赤外発光β-FeSi2球及び高移動度β-FeSi2膜の作製:高温アニールによる特性改善 (〈特集〉環境半導体)
末益 崇; 高倉 健一郎; 飯倉 祐介
Journal of the Materials Science Society of Japan/37(1)/pp.16-20, 2000-01 - One Possibility of Obtaining Bulk GaN : halide VPE Growth at 1000℃ on GaAs(111) Substrates
末益 崇
IEICE Trans. Electron./83-C(4)/p.633-638, 2000-01 - Optimum annealing condition for 1.5μm photoluminescence from reactive deposition epitaxy β-FeSi2 balls embedded in Si crystals
末益 崇
Journal of Luminescence/87-89/p.528-531, 2000-01 - Room Temperature 1.6μm Electroluminescence from a Si-Based Light-Emitling Diode with β-FeSi2 Active Region
末益 崇
Japanese Journal of Applied Physics/39(10B)/p.L1013-L1015, 2000-01 - 熱反応堆積法を利用した赤外発光β-FeSi2球及び高移動度β-FeSi2 膜の作製:高温アニールによる特性改善
末益 崇
材料科学/37(1)/p.16-20, 2000-01 - 環境にやさしい直接遷移型半導体β-FeSi2の研究の現状と将来展望
末益 崇
応用物理/39(7)/p.804-816, 2000-01 - Control of the conduction Type of Nondoped High Mobility β-FeSi2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
末益 崇
Japanese Journal of Applied Physics/39(8A)/p.L789-L781, 2000-01 - Growth of Mn-Doped β-FeSi2 Films on Si(001) by Reactive Deposition Epitaxy
末益 崇
Thin Solid Films/369(1-2)/p.253-256, 2000-01 - Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
Suemasu Takashi; Hiroi Noriyoshi; Fujii Tetsuo; Takakura ...
Japanese journal of applied physics. Pt. 2, Letters/38(8)/pp.L878-L881, 1999-08 - Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy
HASEGAWA Fumio; MINAMI Masato; SUNABA Kenji; SUEMASU Tak...
Japanese journal of applied physics. Pt. 2, Letters/38(7)/pp.L700-L702, 1999-07 - Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
SUEMASU Takashi; IIKURA Yusuke; FUJII Tetsuo; TAKAKURA K...
Japanese journal of applied physics. Pt. 2, Letters/38(6)/pp.L620-L622, 1999-06 - Growth of Continuous and Highly (100)-oriented β-FeSi2 Films on Si(001)from Si/Fe Multilayers with SiO2 Capping and Templates(共著)
末益 崇
Japanese Journal of Applied Physics/38/p.L878-L880, 1999-01 - Fabrication of p-Si/β-FeSi2 balls/n-Si structures by MBE and their electrical and optical properties(共著)
末益 崇
Journal of Luminescence/80/p.473-477, 1999-01 - Thick GaN Growth on GaAs(111) Substrates at 1000℃ with HVPE
末益 崇
Phys. Stat. sol. (a)/176/p.421-424, 1999-01 - Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
SUEMASU Takashi; FUJII Tetsuo; IIKURA Yuusuke; TAKAKURA ...
Japanese journal of applied physics. Pt. 2, Letters/37(12)/pp.L1513-L1516, 1998-12 - Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
TSUCHIYA Harutoshi; SUNABA Kenji; MINAMI Masato; SUEMASU ...
Japanese journal of applied physics. Pt. 2, Letters/37(5)/pp.L568-L570, 1998-05 - Fabrication of Si/β-FeSi_2/Si(001) Structures by Reactive Deposition Epitaxy(Control of near-Interface Structure
末益 崇; 長谷川 文夫
Journal of the Japanese Association of Crystal Growth/25(1)/pp.46-54, 1998-03 - Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
SUEMASU Takashi; TAKAKURA Ken'ichiro; TANAKA Masaya; FUJI...
Japanese journal of applied physics. Pt. 2, Letters/37(3)/pp.L333-L335, 1998-03 - Dependence of GaN MOMBE growth on nitrogen source : plasma gun structure and monomethylhyclrazine(共著)
末益 崇
Journal of Crystal Growth/189-190/p.380-384, 1998-01 - Magnetotransport Properties of a Single-Crystalline β-FeSi2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
末益 崇
Jpn. J. Appl. Phys./37/p.L333-L335, 1998-01 - Growth condition dependence of GaN crystal structures on (001) GaAs by hyride vapor phase epitaxy(共著)
末益 崇
Journal of Crystal Growth/189-190/p.395-400, 1998-01 - Formation of Si/β-FeSi2/Si Structure by Reactive Deposition Epixtaxy
末益 崇
日本結晶成長学会誌(解説)/25(1)/p.46-54, 1998-01 - more...
- Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing