SUEMASU Takashi

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Articles

Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy
HASEGAWA Fumio; MINAMI Masato; SUNABA Kenji; SUEMASU Tak...
Japanese journal of applied physics. Pt. 2, Letters/38(7)/pp.L700-L702, 1999-07
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Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
SUEMASU Takashi; IIKURA Yusuke; FUJII Tetsuo; TAKAKURA K...
Japanese journal of applied physics. Pt. 2, Letters/38(6)/pp.L620-L622, 1999-06
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Growth of Continuous and Highly (100)-oriented β-FeSi₂ Films on Si(001)from Si/Fe Multilayers with SiO₂ Capping and Templates(共著)
末益崇
Japanese Journal of Applied Physics/38/p.L878-L880, 1999-01
Fabrication of p-Si/β-FeSi₂ balls/n-Si structures by MBE and their electrical and optical properties(共著)
末益崇
Journal of Luminescence/80/p.473-477, 1999-01
Thick GaN Growth on GaAs(111) Substrates at 1000℃ with HVPE
末益崇
Phys. Stat. sol. (a)/176/p.421-424, 1999-01
Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
SUEMASU Takashi; FUJII Tetsuo; IIKURA Yuusuke; TAKAKURA ...
Japanese journal of applied physics. Pt. 2, Letters/37(12)/pp.L1513-L1516, 1998-12
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Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
TSUCHIYA Harutoshi; SUNABA Kenji; MINAMI Masato; SUEMASU ...
Japanese journal of applied physics. Pt. 2, Letters/37(5)/pp.L568-L570, 1998-05
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Fabrication of Si/β-FeSi_2/Si(001) Structures by Reactive Deposition Epitaxy(Control of near-Interface Structure
末益崇; 長谷川文夫
Journal of the Japanese Association of Crystal Growth/25(1)/pp.46-54, 1998-03
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Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
SUEMASU Takashi; TAKAKURA Ken'ichiro; TANAKA Masaya; FUJI...
Japanese journal of applied physics. Pt. 2, Letters/37(3)/pp.L333-L335, 1998-03
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Dependence of GaN MOMBE growth on nitrogen source : plasma gun structure and monomethylhyclrazine(共著)
末益崇
Journal of Crystal Growth/189-190/p.380-384, 1998-01
Magnetotransport Properties of a Single-Crystalline β-FeSi₂ Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
末益崇
Jpn. J. Appl. Phys./37/p.L333-L335, 1998-01
Growth condition dependence of GaN crystal structures on (001) GaAs by hyride vapor phase epitaxy(共著)
末益崇
Journal of Crystal Growth/189-190/p.395-400, 1998-01
Formation of Si/β-FeSi₂/Si Structure by Reactive Deposition Epixtaxy
末益崇
日本結晶成長学会誌(解説)/25(1)/p.46-54, 1998-01
Comparison between monomethyl hydrazine and ECR plasma activated nitrogen source for CBE growth of GaN
末益崇
J. Crystal Growt/188/p.81-85, 1998-01
Photoluminescence from Reactive Deposition Epitaxy Grown β-FeSi₂ Balls Embedded in Si Crystals(共著)
末益崇
Japanese Journal of Applied Physics/37/p.L1513-L1516, 1998-01
Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
末益崇
Jpn. J. Appl. Phys./37/p.L568-L570, 1998-01
Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
SUEMASU Takashi; YAMAMOTO Masaki; TAKAKURA Ken'ichiro; HA...
Japanese journal of applied physics. Pt. 1, Regular papers & short notes/36(12)/pp.7146-7151, 1997-12
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5p-YK-5 Preparation and characterization of Fe-Si alloy
掛本博文; 樋口透; 桜木史朗; 牧田雄之助; 小原明; 小林直人; 辛埴; 末益崇; 長谷川 ...
Meeting abstracts of the Physical Society of Japan/52(2)/p.433, 1997-09
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Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
SUEMASU Takashi; TANAKA Masaya; FUJII Tetsuo; HASHIMOTO ...
Japanese journal of applied physics. Pt. 2, Letters/36(9)/pp.L1225-L1228, 1997-09
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Estimation of the hexagonal to cubic component ratio in GaN using X-ray diffraction measurements and evaluation of HVPE GaN/GaAs layers
土屋晴稔; 砂場健児; 米村正吾; 末益崇; 長谷川文夫
Technical report of IEICE. LQE/97(100)/pp.43-48, 1997-06
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Formation of β-FeSi₂ Layers on Si(001) Substrates(共著)
末益崇
Japanes Journal of Applied Physics/36(6A)/p.3620-3624, 1997-01
Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and its Electrical Properties
末益崇
Jpn. J. Appl. Phys./36/p.7146-7151, 1997-01
Surface Preparation and Growth Condition Dependence of Cubic Layer on (001)GaAs by Hydride Vapor Phase Epitaxy
末益崇
Mat. Res. Symp. Proc/468/p.63-67, 1997-01
Cubic Dominant GaN Growth on(001)GaAs Substrates by Hydride Vapor Phase Epitaxy(共著)
末益崇
Japanese Journal of Applied Physics/36(1A/B)/p.L1-L3, 1997-01
Reactive deposition epitaxial growth of β-FeSi₂ layers on Si(001)(共著)
末益崇
Applied Surface Science/117/p.303-307, 1997-01
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