SUEMASU Takashi

Researcher's full information

Articles
  • Aggregation of Monocrystalline β-FeSi2 by Annealing and by Si Overlayer Growth
    末益 崇
    Jpn. J. Appl. Phys./36/p.L1225-L1228, 1997-01
  • Estimation of the hexagonal to cubic component ratio in GaN using X-ray diffiaction measurements and evaluation of HVPE GaN/GaAs layers(共著)
    末益 崇
    Technieal Report of IEICE LQE97-25/p.43-48, 1997-01
  • Quantum-Effect Electron Devices Using Metol(CoSi2)/Insulator(CaF2)/Si Heterostructares(共著)
    末益 崇
    Technical Report of IEICE ED96-2, 1996-01
  • Transter efficiency of hot electrons in a metal(CoSi2)/insulator (CaF2) quantum interference transistor
    末益 崇
    Surface Science/361/p.209-212, 1996-01
  • 金属(CoSi2)/絶縁体(CaF2)/Siヘテロ接合量子効果デバイス
    末益 崇
    電子情報通信学会 電子デバイス研究会 信学技報, 1996-01
  • Room-Temperature Observation of Multiple Negative Differential Resistance in a Metal(CoSi2)/Insulator(CaF2)Quantum Interfevence Transistor Structure(共著)
    末益 崇
    Physica B/227/p.213-215, 1996-01
  • Metal (CoSi_2)/Insulator (CaF_2) Hot Electron Transistor Fabricated by Electron-Beam Lithography on a Si Substrate
    SAITOH Wataru; SUEMASU Takashi; KOHNO Yoshifumi; WATANABE...
    Japanese journal of applied physics. Pt. 2, Letters/34(10)/pp.L1254-L1256, 1995-10
    CiNii
  • Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal (CoSi_2)/Insulator (CaF_2) Heterostructures and Influence of Parasitic Circuit Elements
    SAITOH Wataru; SUEMASU Takashi; KOHNO Yoshifumi; WATANABE...
    Japanese journal of applied physics. Pt. 1, Regular papers & short notes/34(8)/pp.4481-4484, 1995-08
    CiNii
  • Epitaxial Growth of a metal (CoSi2)/insulator (CaF2) nanometer-thick heterostructure and its application to quantum-effect devices
    末益 崇
    Journal of Vacuum Science and Technology/A13(3)/p.623-628, 1995-01
  • Metal(CoSi2)/Insulator(CaF2) Hot Electron Transistor Fabricated by Electron-Beam Lifhography on a Si Substrate(共著)
    末益 崇
    Japanese Journal of Applied Physics/34(10A)/p.L1254-L1256, 1995-01
  • Multiple Negative Differential Resistance due to Quantam Interference of Hot Electron Waves in Metal(CoSi2)/Insulator(CaF2) Heterostructures and Influence of Parasitic Elements(共著)
    末益 崇
    Japanese Journal of Applied Physics/34/p.4481-4482, 1995-01
  • Theoretical and Measured Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors and the Influence of Parasitic Elements
    末益 崇
    IEEE Transactions on Electron Devices/42(12)/p.2203-2210, 1995-01
  • Quantum Interference of Electron Wave in Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Hot Electron Transistor Structure
    SUEMASU Takashi; KOHNO Yoshifumi; SAITOH Wataru; SUZUKI ...
    Japanese journal of applied physics. Pt. 2, Letters/33(12)/pp.L1762-L1765, 1994-12
    CiNii
  • Different Characteristics of Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
    Suemasu Takashi; Kohno Yoshifumi; Suzuki Nobuhiro; Watana...
    IEICE transactions on electronics/77(9)/pp.1450-1454, 1994-09
    CiNii
  • Different Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer
    末益 崇
    IEICE Transactions on Electronics/E77-C(9)/p.1450-1454, 1994-01
  • 金属/絶縁体ヘテロ接合電子デバイス
    末益 崇
    応用物理/63(2)/p.124-131, 1994-01
  • Metal(CoSi_2)/Insulator(CaF_2) Resonant Tunneling Diode
    SUEMASU Takashi; WATANABE Masahiro; SUZUKI Jun; KOHNO Yo...
    Japanese journal of applied physics. Pt. 1, Regular papers & short notes/33(1)/pp.57-65, 1994-01
    CiNii
  • Quantam Interference of Electron Wave in Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Hot Electron Transistor Structure
    末益 崇
    Japanese Journal of Applied Physics/33(12B)/p.L1762-L1765, 1994-01
  • Negative Differential Resistance of Metal(CoSi2)/Insulator(CaF2)Triple-Barrier Resonant Tunneling Diode(共著)
    末益 崇
    Applied Physics Letters/62/p.300-302, 1993-01
  • Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistor
    末益 崇
    IEEE International Electron Devices Meeting Tednical Digest/p.553-556, 1993-01
  • Epitaxial Growth and Electrical Conductarce of Metal (CoSi2)/Insulator (CaF2) Nanometer-Thick Layered Structures on Si (111)
    末益 崇
    Journal of Electronic Materials/21(8)/p.783-789, 1992-01
  • Transistor Action of Metal(CoSi2)/Inoulator(CaF2)Hot Electron Transistor Structure(共著)
    末益 崇
    Electronics Letters/28/p.1002-1003, 1992-01
  • Negative Differential Resistance in Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Diode
    末益 崇
    IEEE Device Research Conference Technical Digest/p.(]G0002[)B-4, 1992-01
  • Room Temperature Negative Differential Resistance of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Diode
    末益 崇
    Electronics Letlers/(28)/p.1432, 1992-01
  • Inprovement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
    末益 崇
    Jpn. J. Appl. Phys./30/p.L672-L674, 1991-01
  • more...