SUEMASU Takashi

Researcher's full information

Articles
  • Different Characteristics of Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
    Suemasu Takashi; Kohno Yoshifumi; Suzuki Nobuhiro; Watana...
    IEICE transactions on electronics/77(9)/pp.1450-1454, 1994-09
    CiNii
  • Different Characteristics of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer
    末益 崇
    IEICE Transactions on Electronics/E77-C(9)/p.1450-1454, 1994-01
  • 金属/絶縁体ヘテロ接合電子デバイス
    末益 崇
    応用物理/63(2)/p.124-131, 1994-01
  • Metal(CoSi_2)/Insulator(CaF_2) Resonant Tunneling Diode
    SUEMASU Takashi; WATANABE Masahiro; SUZUKI Jun; KOHNO Yo...
    Japanese journal of applied physics. Pt. 1, Regular papers & short notes/33(1)/pp.57-65, 1994-01
    CiNii
  • Quantam Interference of Electron Wave in Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Hot Electron Transistor Structure
    末益 崇
    Japanese Journal of Applied Physics/33(12B)/p.L1762-L1765, 1994-01
  • Negative Differential Resistance of Metal(CoSi2)/Insulator(CaF2)Triple-Barrier Resonant Tunneling Diode(共著)
    末益 崇
    Applied Physics Letters/62/p.300-302, 1993-01
  • Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Transistor
    末益 崇
    IEEE International Electron Devices Meeting Tednical Digest/p.553-556, 1993-01
  • Epitaxial Growth and Electrical Conductarce of Metal (CoSi2)/Insulator (CaF2) Nanometer-Thick Layered Structures on Si (111)
    末益 崇
    Journal of Electronic Materials/21(8)/p.783-789, 1992-01
  • Transistor Action of Metal(CoSi2)/Inoulator(CaF2)Hot Electron Transistor Structure(共著)
    末益 崇
    Electronics Letters/28/p.1002-1003, 1992-01
  • Negative Differential Resistance in Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Diode
    末益 崇
    IEEE Device Research Conference Technical Digest/p.(]G0002[)B-4, 1992-01
  • Room Temperature Negative Differential Resistance of Metal (CoSi2)/Insulator (CaF2) Resonant Tunneling Diode
    末益 崇
    Electronics Letlers/(28)/p.1432, 1992-01
  • Inprovement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy
    末益 崇
    Jpn. J. Appl. Phys./30/p.L672-L674, 1991-01
  • Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment
    末益 崇
    Jpn. J. Appl. Phys./30/p.L1702-L1704, 1991-01