SAKURAI Takeaki

Researcher's full information

Articles

• Interface Recombination of Cu2ZnSnS4 Solar Cells Leveraged by High Carrier Density and Interface Defects
  Li Jianjun; Huang Jialiang; Huang Yanchan; Tampo Hito...
  SOLAR RRL/5(10), 2021-10
• Performance improvement of CdS/CdTe solar cells by incorporation of CdSe layers
  Chuang Li Gang Hu Xia Hao Chuanqi Li Bo Tan Yunfan W...
  Journal of Materials Science: Materials in Electronics/32(14)/pp.19083-19094, 2021-06
• Study of defect properties and recombination mechanism in rubidium treated Cu(In, Ga)Se2 solar cells
  Tangara Hamidou; Zahedi-Azad Setareh; Not Jennifer; Schic...
  Journal of Applied Physics, 2021-05
• Study of defect properties and recombination mechanism in rubidium treated Cu(In, Ga)Se2 solar cells
  Tangara Hamidou; Zahedi-Azad Setareh; Not Jennifer; Schic...
  Journal of Applied Physics/129/p.183108, 2021-05
• Effect of Radio-Frequency Power on the Composition of BiVO4 Thin-Film Photoanodes Sputtered from a Single Target
  Liu Jiaqi; Tajima Kazuya; Abdellaoui Imane; Islam Muhamm...
  Energies, 2021-04
• Carrier transport mechanism of diamond p(+)-n junction at low temperature using Schottky-pn junction structure
  Karasawa Ayumu; Makino Toshiharu; Traore Aboulaye; Kato ...
  JAPANESE JOURNAL OF APPLIED PHYSICS/60(3), 2021-03
• Mechanism of Incorporation of Zirconium into BiVO4 Visible-Light Photocatalyst
  Abdellaoui Imane; Islam Muhammad Monirul; Mikas Remeika ...
  Journal of Physical Chemistry C/pp.3320-3326, 2021-02
• Study of open circuit voltage loss mechanism in perovskite solar cells
  櫻井 岳暁; Yulu He; Imane Abdellaoui; M. Abdel-Shakour; Towhi...
  Japanese Journal of Applied Physics/60(SB), 2021-02
• Photo-induced conductivity transient in n-type β-(Al0.16Ga0.84)2O3 and β-Ga2O3
  Traore Aboulaye; Gouveia Maria; Okumura Hironori; Mannequ...
  Japanese Journal of Applied Physics/60/pp.SBBD15-SBBD15-4, 2021-02
• Improvement of power factor in the room temperature range of Mg2Sn1-xGex
  Lima Mariana S. L.; Aizawa Takashi; Ohkubo Isao; Sakur...
  JAPANESE JOURNAL OF APPLIED PHYSICS/60(SB::B), 2021-02
• Study of ion-implanted nitrogen related defects in diamond Schottky barrier diode by transient photocapacitance and photoluminescence spectroscopy
  Guo Junjie; Traore Aboulaye; Ogura Masahiko; Abu Bakar...
  JAPANESE JOURNAL OF APPLIED PHYSICS/60(SB::B), 2021-02
• Effect of Radio-Frequency Power on the Composition of BiVO4 Thin-Film Photoanodes Sputtered from a Single Target
  Liu Jiaqi; Tajima Kazuya; Abdellaoui Imane; Islam Muhamm...
  Energies/14(8)/p.2122, 2021-01
• Identification of deep level defects in CdTe solar cells using transient photo-capacitance spectroscopy
  Li Chuang; Hao Xia; He Yulu; Zhang Jingquan; Wu Lili; Li ...
  Japanese Journal of Applied Physics, 2020-12
• Effect of the double grading on the internal electric field and on the carrier collection in CIGS solar cells
  Lafuente-Sampietro Alban; Yoshida Katsuhisa; Wang Shengh...
  Solar Energy Materials and Solar Cells/223/p.110948, 2020-12
• Understanding the role of Se in defect reduction in CdTe photovoltaics
  Li Chuang; Hao Xia; He Yulu; Zhang Jingquan; Wu Lili; Li ...
  2020 47th IEEE Photovoltaic Specialists Conference (PVSC)/pp.2649-2651, 2020-06
• Study of defects in diamond Schottky barrier diode by photocurrent spectroscopy
  Guo Junjie; Traore Aboulaye; Bin Abu Bakar Muhammad Hafi...
  Japanese Journal of Applied Physics/59(SG), 2020-02
• Photocarrier Recombination Dynamics in BiVO4 for Visible Light-Driven Water Oxidation
  Abdellaoui Imane; Islam Muhammad Monirul; Remeika Mikas; ...
  The Journal of Physical Chemistry C/124(7)/pp.3962-3972, 2020-01
• Fabrication of Mg2Sn(111) film by molecular beam epitaxy
  Aizawa Takashi; Ohkubo Isao; Lima Mariana S. L.; 櫻井 岳暁; M...
  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films/37(6), 2019-11
• Influence of the Annealing Temperature on ALD-Al2O3/NAOS/Si MOS Interface Properties
  Fu Wei; Zhang Xufang; Umishio Hiroshi; Traore Aboulaye; Y...
  Technical Digest of The 29th International Confrence on Photovoltaic Sciene and Enginnering (PVSEC-29)/pp.1708-1710, 2019-11
• Study of local structure at crystalline rubrene grain boundaries via scanning transmission X-ray microscopy
  Foggiatto Alexandre L.; Takeichi Yasuo; Ono Kanta; Sug...
  ORGANIC ELECTRONICS/74/pp.315-320, 2019-11
• Study of Si-layers on graphite-substrates obtained through electrochemical reduction of silica powder
  Islam Muhammad Monirul; Hajer Said H.H. Ahmed; Akimoto K...
  Extended Abstracts of 2019 International Conference on Solid State Devices and Materials (SSDM2019), 2019-09
• Effect of annealing temperature on Al2O3/NAOS/Si MOS interface properties
  Wei Fu; Xufang Zhang; Hiroshi Umishio; Aboulaye Traore; 矢...
  第80回応用物理学会秋季学術講演会　講演予稿集/p.13-228, 2019-09
• The effect of biaxial stress on the carrier-transport properties at SiO2/4H-SiC interfaces
  Fu W.; Ueda A.; Yano Hiroshi; Harada S.; Sakurai T.
  Extended Abstracts of 2019 International Conference on Solid State Devices and Materials (SSDM2019)/pp.735-736, 2019-9
• Analysis of recombination as a function of depth in Cu(In,Ga)(S,Se)2 solar cells
  Alban Lafuente-Sampietro Jingdong Chen Shenghao Wang X...
  2019 MRS Spring Meeting & Exhibit At: Phoenix, USA., 2019-04
• Wavelength-dependent J–V characteristics of CuIn1-x Ga x (S, Se)2 solar cells and carrier recombination
  Lafuente-Sampietro Alban; Chen Jingdong; Wang Shenghao; H...
  Applied Physics Express/12(6)/p.061001, 2019-04
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