MURAKAMI Kouichi

Researcher's full information

Articles

• Dynamic Behavior of Picosecond Pulsed Laser Annealing in Ion Implanted Si
  K. Murakami; M. Kawabe; K. Gamo; S. Namba; Y. Aoyagi
  J. Phys. Soc. Japan/49/p.A1303-1306, 1980
• Ultra-Short Pulsed Laser Annealing (Invited )
  K. Gamo; K. Murakami; M. Kawabe; S. Namba; Y. Aoyagi
  Proc. MRS Symp.on Laser and Electron-Beam Solid Interactions and Materials Processing/p.97-109, 1981
• Proton Implantation Damages in GaAs Studied by Capacitance Transient Spectroscopy
  Y. Yuba; K. Gamo; K. Murakami; S. Namba
  Inst. Phys. Conf.Ser. No.59/p.329-334, 1981
• Measurement of Lattice Temperature during Pulsed-Laser Annealing by Time-Dependent Optical Reflectivity
  K. Murakami; K. Takita; K. Masuda
  Jpn. J. Appl. Phys./20/p.867-870, 1981
• レ－ザ－・アニ－ルの機構
  村上浩一
  応用物理/50/p.866-871, 1981
• Laser Annealing of Ohmic Contacts on GaAs
  A.H. Oraby; K. Murakami; Y. Yuba; K. Gamo; S. Namba
  Appl. Phys. Lett./38/p.562-564, 1981
• Conductivity Change due to Electron Spin Resonancein Amorphous Si-Au System
  N. Kishimoto; K. Morigaki; K. Murakami
  J. Phys. Soc. Japan/50/p.1970-1977, 1981
• Deep Levels in Implanted, Pulsed-Laser Annealed GaAs
  Y. Yuba; K. Gamo; A.H. Oraby; K. Murakami; S. Namba
  Nuclear Instruments and Methods/182/183/p.699-703, 1981
• レ－ザ－・アニ－ルによる非平衡・超高不純物濃度のＳｉ：Tｅ，Ｓｉ：Ｚｎ系作成
  村上浩一; 井川英治; Ａ．Ｈ．Ｏｒａｂｙ; 蒲生健次; 難波進; 増田康博
  レ－ザ－研究/9/p.434-438, 1981
• Dynamic Behavior of Nanosecond Pulsed Laser Annealing in Ion Implanted Silicon
  M. Takai; Y. Sato; K. Murakami; K. Gamo; T.Minamizono; S. ...
  Proc. Symp. on Laser and Electron-Beam Interactions with Solids (North-Holland, 1982)/p.91-96, 1982
• Observation of Atomic Migration of Hg in HgTe and CdTe by means of 40 - 42 MeV O5+ Ion Backscattering
  K. Takita; K. Murakami; K. Masuda; H. Kudo; S. Seki
  Proc. 7th Symp. Ion Sources and Ion Assisted Technology and 4th Intern. Conf. Ion and Plasma Assisted techniques/p.1891-1896, 1983
• Experimental Tests of Non-Thermal Effect for Pulsed-Laser Annealing by Time-Resolved Reflectivity and EPR Measurements
  K. Murakami; K. Masuda; Y. Aoyagi; S. Namba
  Physica/116B/p.564-569, 1983
• Time-Resolved Optical Measurement of Si Lattice Temperature during Nanosecond Pulsed laser Annealing
  K. Murakami; H. Itoh; K. Takita; K. Masuda
  Pysica/117B/118B/p.1024-1026, 1983
• Time-Resolved Si Lattice-Temperature Measurement on Wide Time Scale( 1ns－1s) during Laser Annealing
  K. Murakami; H. Itoh; Y. Tohmiya; K. Takita; K. Masuda
  Proc. MRS Symp. on Energy Beam-Solid Interactions and Transient Thermal Processing (North-Holland, 1984)/p.167-170, 1984
• Time-resolved and Space-resolved Si Lattice Temperature Measurement during cw Laser Annealing of Si on Sapphive
  K. Murakami; Y. Tohmiya; K. Takita; K. Masuda
  Appl. Phys. Lett./45/p.659-661, 1984
• Observation of Hg-Diffusion in cdTe by means of 40-MeV O5+ Ion Backscattering
  K. Takita; K. Murakami; H. Otake; K. Masuda; S. Seki; H. ...
  Appl. Phys. Lett./44/p.996-998, 1984
• Substitutional Nitrogen Impurities in Pulsed-Laser Annealed Silicon
  K. Murakami; H. Itoh; K. Takita; K. Masuda
  Appl. Phys. Lett./45/p.176-178, 1984
• Observation of Hg-Diffusion in cdTe by means of 40-MeV O5+ Ion Backscattering
  K. Takita; K. Murakami; H. Otake; K. Masuda; S. Seki; H. ...
  Appl. Phys. Lett./45/p.176-178, 1984
• Supersaturated Substitutional-Nitrogen Impurities in Nanosecond-Pulsed Laser Annealed Silicon
  K. Murakami; H. Itoh; K. Takita; K. Masuda; T. Nishino
  Proc. 17th Intern. Conf. Physics of Semiconductors(Springer-Velag, 1985)/p.1493-1496, 1985
• Electrical- and Photo-Conductivity Changes due to Electron Spin Resonance in Fine Areas of Ion-Implanted Silicon and Amorphous Silicon
  K. Murakami; N. Iwasa; K. Masuda
  Proc. 13th Intern. Conf. on Defects in Semiconductors/p.611-617, 1985
• Auger Electron Emission under Ion-Beam Shadowing Conditions
  H. Kudo; K. Murakami; K. Takita; K. Masuda; S. Seki; K. ...
  Jpn. J. Appl. Phys./24/p.1440-1444, 1985
• イオン注入半導体のレ－ザ－・アニ－ル
  村上浩一; 伊藤久義; 滝田宏樹; 升田公三
  放射線/11/p.69-74, 1985
• Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si observed by 40 MeV-O5+ Ion Backscattering
  K. Takita; H. Itoh; K. Murakami; K. Masuda; H. Kudo; S. ...
  Jpn. J. Appl. Phys./24/p.L932-934, 1985
• Time-Resolved X-Ray Absorption of an Amorphous Si Foil during Pulsed Laser Irradiation
  K. Murakami; H.C. Gerritsen; H. van Brug; F. Bijkerk; F.W...
  MRS Proc. Symp./51/p.119-124, 1986
• Pulsed-Laser-Irradiated Silicon Studied by Time-Resolved X-Ray Absorption(90-300 eV)
  K. Murakami; H.C. Gerritsen; H. van Brug; F. Bijkerk; F.W...
  Phy. Rev. Letters/56/p.655-658, 1986
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