IWAMURO Noriyuki
- Articles
- Analysis of interface characteristics on p-type SiC MOS capacitors by conductance method
唐本 祐樹; 張 旭芳; 岡本 大; 染谷 満; 畠山 哲夫; 原田 信介; 岩室 憲幸; 矢野 裕司
第78回応用物理学会秋季学術講演会 講演予稿集/p.13-009, 2017-09 - Verification of density distribution of near-interface traps in 4H-SiC MOS capacitors with different oxide thicknesses
張 旭芳; 岡本 大; 畠山 哲夫; 染谷 満; 原田 信介; 岩室 憲幸; 矢野 裕司
第78回応用物理学会秋季学術講演会 講演予稿集/p.13-005, 2017-09 - Density distribution of near-interface traps in 4H-SiC MOS structures with different oxide thicknesses
張 旭芳; 岡本 大; 畠山 哲夫; 染谷 満; 原田 信介; 岩室 憲幸; 矢野 裕司
先進パワー半導体分科会第4回講演会 予稿集/pp.57-58, 2017-11 - Analysis of fast and slow responses of interface traps in p-type SiC MOS capacitors by conductance method
唐本 祐樹; 張 旭芳; 岡本 大; 染谷 満; 畠山 哲夫; 原田 信介; 岩室 憲幸; 矢野 裕司
先進パワー半導体分科会第4回講演会 予稿集/pp.261-262, 2017-11 - Difference of NIT density distribution in 4H-SiC MOS interfaces for Si- and C-faces
張 旭芳; 岡本 大; 畠山 哲夫; 染谷 満; 原田 信介; 岩室 憲幸; 矢野 裕司
電子デバイス界面テクノロジー研究会 －材料・プロセス・デバイス特性の物理－ 第23回研究会 講演予稿集/pp.199-202, 2018-01 - メタルアニール工程を省いた4H-SiCイオン注入n+層オーミックコンタクト実現の検討
北島魁人; 岡本大; 矢野裕司; 岩室 憲幸
平成30年電気学会全国大会講演論文集/p.4-011, 2018-03 - Analysis of conduction mechanism of leakage current in thermally grown oxide
根本 宏樹; 岡本 大; 染谷 満; 木内 祐治; 畠山 哲夫; 原田 信介; 岩室 憲幸; 矢野 裕司
第65回応用物理学会春季学術講演会 講演予稿集/p.13-282, 2018-03 - Impact of passivation treatments on channel mobility for p-channel 4H-SiC MOSFETs
X Zhou; D Okamoto; T Hatakeyama; M Sometani; S Harada; Y ...
第65回応用物理学会春季学術講演会 講演予稿集/p.13-172, 2018-03 - Methodology for Enhanced Short-Circuit capability of SiC MOSFETs
An Junjie; Namai Masaki; Yano Hiroshi; Kobayashi Yusuke; ...
Proceedings of the 30th International Symposium on Power Semiconductor Devices & ICs/pp.391-394, 2018-05 - Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage
Namai M.; An J.; Yano Hiroshi; Iwamuro N.
Jpn. J. Appl. Phys./57(7)/pp.074102-1-074102-10, 2018-07 - Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage
Namai Masaki; An Junjie; Yano Hiroshi; Iwamuro Noriyuki
Japanese Journal of Applied Physics/57(7月)/pp.074102-074111, 2018-06 - Correction of IGBT History, State-of-the-Art, and Future Prospects
Iwamuro Noriyuki; Laska Thomas
IEEE Transaction on Electron Devices/65(6)/pp.2675-2675, 2018-06 - Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs
An Junjie; Namai Masaki; Yano Hiroshi; Iwamuro Noriyuki; ...
Proceedings of International Symposium on Power Semiconductor Devices & ICs (IEEE ISPSD)/pp.391-394, 2018-05 - Experimental Demonstration on Ultra High Voltage and High Speed 4H-SiC DSRD with Smaller Numbers of Die Stacks for Pulse Power
Goto Taiga; Shirai Takuma; Tokuchi Akira; Naito Takashi; ...
Material Science Forum/924/pp.858-861, 2018-06 - Solid State Devices and Materials FOREWORD
Kageshima Hiroyuki; Hosoi Takuji; Iwamoto Satoshi; Ari...
JAPANESE JOURNAL OF APPLIED PHYSICS/57(4:::SI), 2018-04 - Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors
Y Karamoto; X Zhang; D Okamoto; M Sometani; T Hatakeyama...
Jpn. J. Appl. Phys./57(6S3)/pp.06KA06-1-06KA06-6, 2018-05 - Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors
X Zhang; D Okamoto; T Hatakeyama; M Sometani; S Harada; N...
Jpn. J. Appl. Phys./57(6S3)/pp.06KA04-1-06KA04-5, 2018-05 - Investigation of robustness capability of -730V p-channel vertical SiC power MOSFET for complementary inverter applications
An Junjie; Namai Masaki; Yano Hiroshi; Iwamuro Noriyuki
IEEE Transaction on Electron Devices/64(10)/pp.4219-4225, 2017-10 - Characterization of near-interface traps at 4H-SiC metal–oxide–semiconductor interfaces using a modified distributed circuit model
Zhang X.; Okamoto D.; Hatakeyama T.; Sometani M.; Harada ...
Appl. Phys. Express/10(6)/pp.064101-1-064101-4, 2017-06 - Experimental and Numerical Demonstration and Optimized Methods for SiC Trench MOSFET Short-Circuit Capability
Namai M.; An J.; Yano Hiroshi; Iwamuro N.
Proceedings of The 29th International Symposium on Power Semiconductor Devices & ICs/pp.363-366, 2017-05 - Investigation of Maximum Junction Temperature for 4H-SiC MOSFET during Unclamped Inductive Switching Test
安 俊傑; 生井 正輝; 岡本 大; 矢野 裕司; 只野 博; 岩室 憲幸
IEEJ Transaction of EIS/137(2)/pp.216-221, 2017 - Development Status of New Material Power Devices
岩室 憲幸; 坂東 章; 矢野 浩司; 宮澤 哲哉; 江口 博臣; 三浦 喜直; 鹿内 洋志; 池田 成明; 上本...
IEEJ Transactions on Electronics, Information and Systems/137(1)/pp.13-19, 2017 - Ohmic contact on n- and p-type ion-implanted 4H-SiC with low-temperature metallization process for SiC MOSFETs
Shimizu Haruka; Shima Akio; Shimamoto Yasuhiro; Iwamur...
Jpn. J. Appl. Phys./56(4::S)/p.04CR15, 2017-04 - IGBT History, State-of-the-Art, and Future Prospects
Iwamuro Noriyuki; Laska Thomas
IEEE TRANSACTIONS ON ELECTRON DEVICES/64(3)/pp.741-752, 2017-03 - A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors
Zhang X. F.; Okamoto D.; Hatakeyama T.; M. Sometani; Harad...
Abstacts of 47th IEEE Semiconductor interface Specialist Conference/p.11.15, 2016-12 - more...
- Analysis of interface characteristics on p-type SiC MOS capacitors by conductance method