YANO Hiroshi
- Articles
- Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress
Enjoji Yuya; 岩室憲幸; Yano Hiroshi
Abstracts of International Conference on Silicon Carbide and Related Materials 2023 (ICSCRM 2023)/p.Mo.C.11, 2023-09 - Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique
Akiba Atsuhiro; 岩室憲幸; Yano Hiroshi
Abstracts of International Conference on Silicon Carbide and Related Materials 2023 (ICSCRM 2023)/p.C.1, 2023-09 - チャージポンピング法によるMOS界面欠陥評価のための＋αの研究技術
矢野 裕司
Oyo Buturi/93(3)/pp.179-183, 2024-03 - Investigations of Residual Damage in SiC Trench MOSFETs after Single and Multiple Short-Circuit Stress
髙橋光希; 矢野裕司; Iwamuro Noriyuki
Proceedings of the 35st International Symposium on Power Semiconductor Devices & ICs/pp.250-253, 2023-05 - The effect of biaxial strain on the phonon-limited mobility in 4H-SiC MOSFETs
Fu Wei; Yano Hiroshi; Sakurai Takeaki; Ueda Akiko
APPLIED PHYSICS EXPRESS/16(8)/pp.081002-1-081002-6, 2023-08-01 - Experimental Demonstration of the Surge Current Capability of Embedded SBDs in 1.2-kV SiC SBD-integrated Trench MOSFETs with Ti and Ni as Schottky Metals
北村雄大; 俵 武志; 原田 信介; 矢野裕司; Iwamuro Noriyuki
Extended Abstracts of 2022 International Conference on Solid State Devices and Materials/pp.701-702, 2022-09-26 - Experimental and Numerical Investigations of the Electrical Characteristics of SiC SBD-Integrated MOSFETs by Varying the Area Occupied by Embedded SBDs
柏佳介; 髙橋光希; 矢野裕司; Iwamuro Noriyuki
Extended Abstracts of 2022 International Conference on Solid State Devices and Materials/pp.703-704, 2022-09-26 - Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block
Kitamura Yudai; Yano Hiroshi; 岩室憲幸; Kato Fumiki; Tanak...
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.109-112, 2022-05-22 - Investigation of the Short-Circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates using Electro-Thermal-Mechanical Analysis
Kashiwa Keisuke; Yao Kailun; Yano Hiroshi; 岩室憲幸; Harad...
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.113-116, 2022-05-22 - Investigation of the Short-circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates Using Electro-thermal- mechanical Analysis
柏佳介; 姚 凱倫; 信介 原田; 矢野裕司; Iwamuro Noriyuki
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.113-116/pp.113-116, 2022-05-22 - Experimental Demonstration of the Surge Current Capability of Embedded SBDs in 1.2-kV SiC SBD-integrated Trench MOSFETs with Ti and Ni as Schottky Metals
北村雄大; 俵 武志; 原田 信介; 矢野裕司; Iwamuro Noriyuki
Extended Abstracts of 2022 International Conference on Solid State Devices and Materials/pp.701-702, 2022-09-26 - Experimental and Numerical Investigations of the Electrical Characteristics of SiC SBD-Integrated MOSFETs by Varying the Area Occupied by Embedded SBDs
柏佳介; 髙橋光希; 矢野裕司; Iwamuro Noriyuki
Extended Abstracts of 2022 International Conference on Solid State Devices and Materials/pp.703-704, 2022-09-26 - AC ゲートストレス印加による SiC-MOSFET のしきい値電圧変動評価
円城寺佑哉; 岩室憲幸; 矢野 裕司
第83回応用物理学会秋季学術講演会 予稿集/p.12-122, 2022-09-20 - 3レベルチャージポンピング法を用いた4H-SiC MOSFETの界面近傍酸化膜トラップの酸化膜内密度分布の検討
秋葉淳宏; 矢野 裕司
第83回応用物理学会秋季学術講演会 予稿集/p.12-121, 2022-09-20 - SiCパワーデバイスの高性能化・高信頼化に向けた課題と取り組み
矢野 裕司
結晶加工と評価技術 第145委員会 第176回研究会資料/pp.22-28, 2022-10-21 - モノリシック相補型インバータに向けた4H-SiC横型p-ch SJ-MOSFETの構造設計
森海斗; 岩室憲幸; 矢野 裕司
先進パワー半導体分科会 第9回講演会 予稿集/pp.91-92, 2022-12-20 - バイポーラACゲートストレス印加によるSiC-MOSFETのしきい値電圧変動評価
円城寺佑哉; 岩室憲幸; 矢野 裕司
先進パワー半導体分科会 第9回講演会 予稿集/pp.75-75, 2022-12-20 - 3レベルチャージポンピング法を用いたSiC MOSFETの界面特性評価：酸化膜窒化処理と界面欠陥量の関係
秋葉淳宏; 矢野 裕司
先進パワー半導体分科会 第9回講演会 予稿集/pp.73-74, 2022-12-20 - チャージポンピング法を用いたpチャネルSiC MOSFET の界面特性評価
秋葉淳宏; 矢野 裕司
第70回応用物理学会春季学術講演会 予稿集/p.12-095, 2023-03-15 - Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs
柏佳介; 髙橋光希; 北村雄大; 矢野裕司; Iwamuro Noriyuki
JAPANESE JOURNAL OF APPLIED PHYSICS/62(SC1073)/pp.SC2073-1-SC1073-10, 2023-02 - Significant Improvement of Switching Characteristics in a 1.2-kV SiC SWITCH-MOS by the Application of Kelvin Source Connection
松井ケビン; 俵 武志; 原田 信介; 田中聡; 佐藤弘; 矢野裕司; Iwamuro Noriyuki
IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING/18(2)/pp.278-285, 2022-10 - Study on enhancing of the surge current capabilities of embedded SBDs in SWITCH-MOSs and body-PiN-diodes in SiC trench MOSFETs
北村雄大; 加藤史樹; 田中聡; 俵 武志; 原田 信介; 佐藤弘; 矢野裕司; Iwamuro Noriyuki
JAPANESE JOURNAL OF APPLIED PHYSICS/62(SC1007)/pp.SC1007-1-SC1007-9, 2022-12 - Investigation of the Short-Circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates using Electro-Thermal-Mechanical Analysis
Kashiwa Keisuke; Yao Kailun; Yano Hiroshi; 岩室憲幸; Harada S...
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.113-116, 2022-05-22 - Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block
Kitamura Yudai; Yano Hiroshi; 岩室憲幸; Kato Fumiki; Tanaka S...
Proceedings of The 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD2022)/pp.109-112, 2022-05-22 - 3レベルチャージポンピング法を用いたSiC MOSFETの界面欠陥分布の検討
秋葉淳宏; 矢野 裕司
第69回応用物理学会春季学術講演会 予稿集/p.100000000-150, 2022-03-22 - more...
- Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress