YANO Hiroshi
- Articles
- Experimental and Numerical Demonstration and Optimized Methods for SiC Trench MOSFET Short-Circuit Capability
Namai M.; An J.; Yano Hiroshi; Iwamuro N.
Proceedings of The 29th International Symposium on Power Semiconductor Devices & ICs/pp.363-366, 2017-05 - Recent Progress in SiC MOSFET and its Interface
矢野 裕司
Abstract of annual meeting of the Surface Science of Japan/35(0)/p.7, 2015 - Investigation of Maximum Junction Temperature for 4H-SiC MOSFET during Unclamped Inductive Switching Test
安 俊傑; 生井 正輝; 岡本 大; 矢野 裕司; 只野 博; 岩室 憲幸
IEEJ Transaction of EIS/137(2)/pp.216-221, 2017 - 相補型インバータ向け縦型SiC-pMOSFETの検討
奥田 一真; 磯部 高範; 矢野 裕司; 岩室 憲幸; 只野 博
Journal of the Japan Institute of Power Electronics/40/pp.238-238, 2015-03
- Experimental and Numerical Demonstration and Optimized Methods for SiC Trench MOSFET Short-Circuit Capability