OKUMURA Hironori
- Articles
- MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
Lemettinen J.; Okumura H.; Kim I.; Rudzinski M.; Grzonka ...
JOURNAL OF CRYSTAL GROWTH/487/pp.50-56, 2018-04 - MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
Lemettinen J.; Okumura H.; Kim I.; Kauppinen C.; Palacios...
JOURNAL OF CRYSTAL GROWTH/487/pp.12-16, 2018-04 - AlN metal–semiconductor field-effect transistors using Si-ion implantation
Okumura Hironori; Suihkonen Sami; Lemettinen Jori; Uedono...
Jpn. J. Appl. Phys./57(4:::SI)/p.04FR11, 2018-03 - Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Zhang Y.; Liu Zhihong; Tadjer Marko J.; Sun Min; Piedra ...
IEEE Electron Device Letters/38(8)/pp.1097-1100, 2017-08 - Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN
Okumura Hironori; Martin Denis; Grandjean Nicolas
APPLIED PHYSICS LETTERS/109(25), 2016-12 - Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam
Uedono Akira; Malinverni Marco; Martin Denis; Okumura ...
JOURNAL OF APPLIED PHYSICS/119(24), 2016-06 - Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
Okumura Hironori; Denis Martin; Marco Malinverni; Nicolas Gr...
Applied Physics Letters/108(7)/p.072102, 2016-02
- MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC