現在地

大井川 治宏(オオイガワ ハルヒロ; Oigawa, Haruhiro)

研究者情報全体を表示

論文
  • Caracteristic intra-and interactions of Kr atoms adsorbed on the Si(111)-7×7 surface
    Li Y.-J.; Futaba D. N.; Oigawa H; Miyake K; Shigekawa H
    Physical Revien B/68/pp.033301-1-033301-4, 2003-01
  • SPMで覗くSi(100)表面構造相転移の不思議な世界 ー最安定相を探し求めた先に現れたのはー
    重川秀実; 吉田昭二; 武内修; 大井川治宏
    日本物理学会誌/58(7)/p.503-511, 2003-01
  • Development of Radio Frequency STM for ESR Spin Detection
    Matsuyama Eiji; S. Yasuda; Takeuchi Osamu; Oigawa Haruhir...
    13th International Conference on Scanning Tunneling Microscopy/Spectroscopy/p.119, 2005-07
  • A Model to Explain the Effectiveness Passivation of the GaAs Surface by (NH4)2Sx Treatment
    Nannichi Yasuo; Fan Jia-Fa; Oigawa Haruhiro; Koma Atsushi
    Japanese Journal of Applied Physics/27(12)/pp.L2367-L2369, 1988-01
  • Molecular Beam Epitaxy on the (NH4)2Sx-Treated Surface of GaAs
    Oigawa Haruhiro; Kawabe Mitsuo; Jia-Fa Fan; Nannichi Yasuo
    Proc. MRS on Chemistry and Defects in Semiconductor Heterostructures/pp.427-432, 1989-01
  • Molecular and electronic properties of β-(BEDT-TTF)2PF6 studied by scanning tunneling microscopy
    Shigekawa H; Miyake K; Aiso Y; Oigawa H; Mori T; Kobayashi A
    Synthetic metals/70(1-3)/pp.935-936, 1995-01
  • Study on (NH4)2S-treated GaAs(001) Surface probed by Time-resolved Scanning Tunneling Microscopy
    Oigawa H; Yokota M; Yoshida S; Takeuchi O; Shigekawa H
    20th International Colloquium on Scanning Probe Microscopy, 2012-12
  • Single-Atomic-Level Probe of Transient Carrier Dynamics by Laser-Combined Scanning Tunneling Microscopy
    Yoshida Shoji; Yokota Munenori; Takeuchi Osamu; Oigawa Ha...
    APPLIED PHYSICS EXPRESS/6(3), 2013-03
  • STMによるSe処理を施したGaAs(001)表面超構造の研究
    重川 秀実; 大井川 治宏; 三宅 晃司; 相磯 良明; 南日 康夫; ...
    表面科学/15(5)/p.305-310, 1994-01
  • The Effect of (NH4)2Sx Treatment on the Interface Characteristics of GaAs MIS Structures(共著)
    Fan J; Oigawa H; Nannichi Y
    Japanese Journal of Applied Physics/27(7)/pp.L1331-L1333, 1988-01
  • Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs
    Fan J; Oigawa H; Nannichi Y
    Japanese Journal of Applied Physics/27(11)/pp.L2125-L2127, 1988-01
  • Studies on an (NH4)2Sx-Treated GaAs Surface Using AES LEELS and RHEED
    Oigawa H; Fan J; Nannichi Y; Ando K; Saiki K; Koma A
    Japanese Journal of Applied Physics/28/pp.L340-L342, 1989-01
  • AES Observation on the Photochemically Washed Surface of GaAs
    Oigawa H; Fan J; Nannichi Y
    Japanese Journal of Applied Physics/28/pp.L525-L527, 1989-01
  • Reflection High-Energy Electron Diffraction and X-ray Photoemission Spectroscopic Study on (NH4)2Sx-Treated GaAs(100) Surfaces
    Hirayama H; Matsumoto Y; Oigawa H; Nannichi Y
    Applied Physics Letters/54(6)/pp.2565-2567, 1989-01
  • Marked Reduction of the Surface/Interface States of GaAs by (NH4)2Sx Treatment
    Fan J; Oigawa H; Nannichi Y
    Japanese Journal Applied Physics/28(12)/pp.L2255-L2257, 1989-01
  • 硫黄処理によるGaAs表面の安定化
    大井川 治宏; 樊 甲法; 南日 康夫; 重川 秀実
    表面科学/11(8)/pp.9-16, 1990-01
  • 硫化アンモニウム処理を施したGaAs(100)表面のSTM観察
    吉村 雅満; 塩田 隆; 黒木 昭彦; 影島 賢巳; 河津 璋; 重川 ...
    表面科学/11(8)/pp.469-476, 1990-01
  • Epitaxial Growth of Al on (NH4)2Sx-treated GaAs
    Oigawa H; Fan J; Nannichi Y; Kawabe M
    Japanese Journal of Applied Physics/29/pp.L249-L252, 1990-01
  • The effect of sulfur coating on the passivation of the GaAs surface observed by slow positrons
    Lee J; Wei L; Tanigawa S; Oigawa H; Nannichi Y
    Proc. 3rd International Workshop on Positron and Positronium Chemistry/3/pp.603-608, 1990-01
  • Chemistry of S/GaAs and metal/S/GaAs systems
    Sugahara H; Oshima M; Oigawa H; Shigekawa H; Nannichi Y
    Proc. 37th Symposium of American Vacuum Society/37/pp.50-55, 1990-01
  • Universal Passivation Effect of (NH4)2Sx Treatment on the Surface of III-V Compound Semiconductors
    Oigawa H; Fan J; Nannichi Y; Sugahara H; Oshima M
    Japanese Journal of Applied Physics/30/pp.L322-L325, 1991-01
  • Surface Structure of InAs (001) Treated with (NH4)2Sx Solution
    Katayama M; Aono M; Oigawa H; Nannichi Y; Sugahara H; Osh...
    Japanese Journal of Applied Physics/30/pp.L786-L789, 1991-01
  • Synchrotron radiation photoemission analysis for(NH4)2Sx-treated GaAs
    Sugahara H; Oshima M; Oigawa H; Shigekawa H; Nannichi Y
    Journal of Applied Physics/69/pp.4345-4349, 1991-01
  • Surface Structure of Selenium-treated GaAs (001) Studied by Field Ion Scanning Tunneling Microscopy
    Shigekawa H; Hashizume T; Oigawa H; Motai K; Mera Y; Nann...
    Applied Physics Letters/59(23)/pp.2986-2988, 1991-01
  • Temperature dependent changes on the sulfur-passivated GaAs (111)A. 100 and (111)B surfaces
    Scimeca T; Muramatsu Y; Oshima M; Oigawa H; Nannichi Y
    Physical Review B/44/pp.12927-12932, 1991-01