現在地

梅田 享英(ウメダ タカヒデ; Umeda, Takahide)

研究者情報全体を表示

論文
  • Electron spin resonance observation of the Si(111)-(7×7) surface and its oxidation process
    T. Umeda; M. Nishizawa; T. Yasuda; J. Isoya; S. Yamasaki;...
    Physical Review Letters/86(6)/p.1054-1057, 2001-01
  • In situ ESR observation of interface dangling bond formation processes during amorphous SiO_2_ growth on Si
    W. Futako; T. Umeda; M. Nishizawa; T. Yasuda; J. Isoya; S...
    Journal of Non-crystalline Solids/299-302/p.575, 2002-01
  • Ellectrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits
    T. Umeda; Y. Mochizuki; K. Okonogi; K. Hamada
    Journal of Applied Physics/94(11)/p.7105-7111, 2003-12
  • EPR and pulsed ENDOR study of EI6 and related defects in 4H-SiC
    T. Umeda; Y. Ishitsuka; J. Isoya; N. Morishita; T. Ohshim...
    Materials Science Forum/457-460(465)/pp.465-468, 2004-01
  • Improvement of Data Retention Time Property by Reducing Vacancy-Type Point Defect in DRAM Cell Transistor
    K. Okonogi; K. Ohyu; T. Umeda; H. Miyake; S. Fujieda
    Proceedings International Reliability Physics Symposium 2006/2005/p.695, 2005-03
  • Quantitative identification for the physical origin of variable retention time: a vacancy-oxygen complex defect model
    K. Ohyu; T. Umeda; K. Okonogi; S. Tsukada; M. Hidaka; S. ...
    Technical Digest International Electron Device Meeting (IEDM) 2006/2006/p.389, 2006-12
  • A web-based database system for EPR centers in semiconductors
    T. Umeda; S. Hagiwara; M. Katagiri; N. Mizuochi; J. Isoya
    Physica B/376-377/p.249-252, 2006-01
  • Shallow phosphorous donors in 3C-, 4H-, and 6H-SiC , Proceedings of ICSCRM2005 (Sep. 17-23, 2005, Pittsburgh, USA)
    J. Isoya; M. Katagiri; T. Umeda; N.T. Son; A. Henry; E. J...
    Materials Science Forum/527-529/p.593-596, 2006-01
  • Deep acceptor level of the carbon vacancy-carbon antisite pairs in 4H-SiC
    P. Carlsson; N.T. Son; T. Umeda; J. Isoya; E. Janzen
    Material Science Forum/556-557/p.449-452, 2007-01
  • EPR identification of defects and impurities in SiC: To be decisive
    J. Isoya; T. Umeda; N. Mizuochi; N.T. Son; E. Janzen; T. ...
    Material Science Forum/600-603(Part 1-2)/pp.279-284, 2009-01
  • Photo-EPR study of vacancy-type defects in irradiated n-type 4H-SiC
    T. Umeda; N. Morishita; T. Ohshima; H. Itoh; J. Isoya
    Material Science Forum/600-603(Part 1-2)/pp.409-412, 2009-01
  • Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interafce trap density
    R. Kosugi; T. Umeda; Y. Sakuma
    Applied Physics Letters/99(18)/p.182111, 2011-10
  • Hybrid quantum circuit with a superconducting qubit coupled to a spin ensemble
    Y. Kubo; C. Grezes; A. Dewes; T. Umeda; J. Isoya; H. Sumi...
    Physical Review Letters/107(22)/p.220501, 2011-11
  • 22pGQ-12 イオン照射によるダイヤモンド結晶中の窒素空孔センターの生成(22pGQ 格子欠陥・ナノ構造(半導体・誘電体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))
    山本 卓; 小野田 忍; 大島 武; Naydenov Boris; Dolde Floria...
    日本物理学会講演概要集/66(2)/p.994, 2011-08
  • Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance
    Umeda T.; Esaki K.; Kosugi R.; Fukuda K.; Ohshima T.; Mor...
    APPLIED PHYSICS LETTERS/99(14), 2011-10
  • 28aXT-10 SiC中のドナー・アクセプターの位相緩和(格子欠陥・ナノ構造)(領域10)
    磯谷 順一; 野澤 秀彰; 梅田 享英; 大島 武; 森下 憲雄; 神谷...
    日本物理学会講演概要集/59(1)/p.962, 2004-03
  • 先端DRAMにおけるデータ保持時間の変動現象のメカニズム : 単一点欠陥が引き起こすデバイス劣化現象
    梅田 享英
    應用物理/76(9)/pp.1037-1040, 2007-09
  • 特定分野の学術論文をピンポイントで抽出し,いかに検索するか? Defect dat@baseの実践例
    梅田 享英; 萩原 茂; 水落 憲和; 磯谷 順一
    情報管理/51(9)/pp.653-666, 2008-01
  • Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC
    Umeda T.; Isoya J.; Ohshima T.; Morishita N.; Itoh H.; Ga...
    PHYSICAL REVIEW B/75(24), 2007-06
  • EPR identification of intrinsic defects in SiC
    Isoya J.; Umeda T.; Mizuochi N.; Son N. T.; Janzen E.; Oh...
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS/245(7)/pp.1298-1314, 2008-07
  • Dicarbon antisite defect in n-type 4H-SiC
    Umeda T.; Isoya J.; Morishita N.; Ohshima T.; Janzen E.; ...
    PHYSICAL REVIEW B/79(11)/p.1152110, 2009-03
  • Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance
    Umeda T.; Isoya J.; Ohshima T.; Onoda S.; Morishita N.; O...
    APPLIED PHYSICS LETTERS/97(4), 2010-07
  • EPR identification of two types of carbon vacancies in 4H-SiC
    Umeda T; Isoya J; Morishita N; Ohshima T; Kamiya T
    PHYSICAL REVIEW B/69(12), 2004-03
  • EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC
    Umeda T; Isoya J; Morishita N; Ohshima T; Kamiya T; Gali ...
    PHYSICAL REVIEW B/70(23), 2004-12
  • EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC
    Umeda T; Ishitsuka Y; Isoya J; Son NT; Janzen E; Morishit...
    PHYSICAL REVIEW B/71(19), 2005-05