UMEDA Takahide
- Articles
- Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study
Umeda Takahide
ECS Transactions/80(1)/pp.147-153, 2017-09 - Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors
Abe Y.; Umeda T.; Okamoto M.; Kosugi R.; Harada S.; ...
APPLIED PHYSICS LETTERS/112(3), 2018-01 - Towards a spin-ensemble quantum memory for superconducting qubits
Grezes Cecile; Kubo Yuimaru; Julsgaard Brian; Umeda Takahide...
COMPTES RENDUS PHYSIQUE/17(7)/pp.693-704, 2016-08 - ESR study on hydrogen passivation of intrinsic defects in p-type and semi-insulating 4H-SiC
K. Murakami; S. Tanai; T. Okuda; J. Suda; T. Kimoto; Umeda Tak...
Materials Science Forum/858/pp.318-321, 2016-05 - Microscopic difference between dry and wet oxidations of C-face 4H-SiC MOSFFETs studied by electrically detected magnetic resonance
Y. Kagoyama; M. Okamoto; S. Harada; R. Arai; Umeda Takahide
Materials Science Forum/858/pp.619-622, 2016-05 - Electrically detected magnetic resonance study on interface defects responsible for threshold-voltage shift in C-face 4H-SiC MOSFETs
G. W. Kim; R. Arai; S. J. Ma; M. Okamoto; H. Yoshioka; S. Hara...
Materials Science Forum/858/pp.591-594, 2016-05 - A silicon carbide room-temperature single-photon source
S. Castelletto; B. C. Johnson; V. Ivády; N. Stavrias; Umeda T...
NATURE MATERIALS/13(2)/pp.151-156, 2014-02 - Microscopic origins of dry-etching damages in silicon large-scaled integrated circuits revealed by electrically detected magnetic resonance
K. Uejima; T. Umeda
APPLIED PHYSICS LETTERS/104(8)/p.082111, 2014-02 - Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO2 Interfaces
T. Umeda; R. Kosugi; K. Fukuda; N. Morishita; T. Oshima; ...
Materials Science Forum/717-720/p.427-432, 2012 - Polymorphism of carbon forms: Polyhedral morphology and electronic structures
M. Fujita; T. Umeda; M. Yoshida
Physical Review B/51(19)/p.13778-13780, 1995-05 - Electronic structure of band-tail electrons in a-Si:H
T. Umeda; S. Yamasaki; A. Matsuda; J. Isoya; K. Tanaka
Physical Review Letters/77(22)/p.4600-4603, 1996-11 - Spatial distribution of phosphorus atoms surrounding spin centers of P-doped hydrogenated amorphous silicon elucidated by pulsed ESR
S. Yamasaki; J.-K. Lee; T. Umeda; J. Isoya; K. Tanaka
Journal of Non-crystalline Solids/198-200/p.330-333, 1996-01 - Insitu electron-spin- resonance measurements of film growth of hydrogenated amorphous silicon
S. Yamasaki; T. Umeda; J. Isoya; K. Tanaka
Applied Physics Letters/70(9)/p.1137-1139, 1997-03 - Control of crystallinity of microcrystalline silicon film grown on insulating glass substrates
J.-H. Zhou; K. Ikuda; T. Yasuda; T. Umeda; S. Yamasaki; K...
Journal of Non-crystalline Solids/227-230/p.857-860, 1998-01 - Energy location of light-induced ESR centers in undoped a-Si:H
T. Umeda; S. Yamasaki; A. Matsuda; J. Isoya; K. Tanaka
Journal of Non-crystalline Solids/227-230/p.353-357, 1998-01 - Microscopic nature of localized states in a-Si:H and their role in metastability
S. Yamasaki; T. Umeda; J. Isoya; J.H. Zhou; K. Tanaka
Journal of Non-crystalline Solids/227-230/p.332-337, 1998-01 - Existence of surface region with high dangling bond density during a-Si:H film growth
S. Yamasaki; T. Umeda; J. Isoya; K. Tanaka
Journal of Non-crystalline Solids/227-230/p.83-87, 1998-01 - Electron spin resonance center of Dangling bonds in undoped a-Si:H
T. Umeda; S. Yamasaki; J. Isoya; K. Tanaka
Physical Review B/59(7)/p.4849-4857, 1999-02 - Microscopic origin of light-induced ESR centers in undoped a-Si:H
T. Umeda; S. Yamasaki; J. Isoya; K. Tanaka
Physical Review B/62(23)/p.15702-15710, 2000-12 - In situ electron spin resonance of initial oxidation processes of Si surfaces
T. Umeda; S. Yamasaki; M. Nishizawa; T. Yasuda; K. Tanaka
Applied Surface Science/162-163/p.299-302, 2000-01 - Defects related to DRAM leakage current studied by electrically detected magnetic resonance
T. Umeda; Y. Mochizuki; K. Okonogi; K. Hamada
Physica B/308-310/p.1169-1172, 2001-01 - Charge-trapping defects cat-CVD silicon nitride films
T. Umeda; Y. Mochizuki; Y. Miyoshi; Y. Nashimoto
Thin Solid Films/395/p.266-269, 2001-01 - Electron spin resonance observation of the Si(111)-(7×7) surface and its oxidation process
T. Umeda; M. Nishizawa; T. Yasuda; J. Isoya; S. Yamasaki...
Physical Review Letters/86(6)/p.1054-1057, 2001-01 - In situ ESR observation of interface dangling bond formation processes during amorphous SiO_2_ growth on Si
W. Futako; T. Umeda; M. Nishizawa; T. Yasuda; J. Isoya; S...
Journal of Non-crystalline Solids/299-302/p.575, 2002-01 - Ellectrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits
T. Umeda; Y. Mochizuki; K. Okonogi; K. Hamada
Journal of Applied Physics/94(11)/p.7105-7111, 2003-12 - more...
- Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study