UMEDA Takahide
- Articles
- Shallow phosphorous donors in 3C-, 4H-, and 6H-SiC , Proceedings of ICSCRM2005 (Sep. 17-23, 2005, Pittsburgh, USA)
J. Isoya; M. Katagiri; T. Umeda; N.T. Son; A. Henry; E. Janzen...
Materials Science Forum/527-529/p.593-596, 2006-01 - Deep acceptor level of the carbon vacancy-carbon antisite pairs in 4H-SiC
P. Carlsson; N.T. Son; T. Umeda; J. Isoya; E. Janzen
Material Science Forum/556-557/p.449-452, 2007-01 - EPR identification of defects and impurities in SiC: To be decisive
J. Isoya; T. Umeda; N. Mizuochi; N.T. Son; E. Janzen; T. Ohshima
Material Science Forum/600-603(Part 1-2)/pp.279-284, 2009-01 - Photo-EPR study of vacancy-type defects in irradiated n-type 4H-SiC
T. Umeda; N. Morishita; T. Ohshima; H. Itoh; J. Isoya
Material Science Forum/600-603(Part 1-2)/pp.409-412, 2009-01 - Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interafce trap density
R. Kosugi; T. Umeda; Y. Sakuma
Applied Physics Letters/99(18)/p.182111, 2011-10 - Hybrid quantum circuit with a superconducting qubit coupled to a spin ensemble
Y. Kubo; C. Grezes; A. Dewes; T. Umeda; J. Isoya; H. Sum...
Physical Review Letters/107(22)/p.220501, 2011-11 - 22pGQ-12 Nitrogen-vacancy Fluorescent Centers Created by Ion Implantations in Single Crystal Diamond
山本 卓; 小野田 忍; 大島 武; Naydenov Boris; Dolde Florian; Fedder ...
Meeting abstracts of the Physical Society of Japan/66(2)/p.994, 2011-08 - Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance
Umeda T.; Esaki K.; Kosugi R.; Fukuda K.; Ohshima T.; Mor...
APPLIED PHYSICS LETTERS/99(14), 2011-10 - 28aXT-10 Electron spin phase relaxation of donors and acceptors in SiC
磯谷 順一; 野澤 秀彰; 梅田 享英; 大島 武; 森下 憲雄; 神谷 富裕
Meeting abstracts of the Physical Society of Japan/59(1)/p.962, 2004-03 - Microscopic mechanism of variable retention time phenomenon in dynamic random access memories
梅田 享英
應用物理/76(9)/pp.1037-1040, 2007-09 - A pinpoint search system for a specialized research area in physics and engineering : "Defect dat@base" for defects in semiconductors and semiconductor devices
梅田 享英; 萩原 茂; 水落 憲和; 磯谷 順一
Journal of Information Processing and Management/51(9)/pp.653-666, 2008-01 - Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC
Umeda T.; Isoya J.; Ohshima T.; Morishita N.; Itoh H.; Gali A.
PHYSICAL REVIEW B/75(24)/pp.0-0, 2007-06 - EPR identification of intrinsic defects in SiC
Isoya J.; Umeda T.; Mizuochi N.; Son N. T.; Janzen E.; Oh...
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS/245(7)/pp.1298-1314, 2008-07 - Dicarbon antisite defect in n-type 4H-SiC
Umeda T.; Isoya J.; Morishita N.; Ohshima T.; Janzen E.; ...
PHYSICAL REVIEW B/79(11)/pp.115211-0, 2009-03 - Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance
Umeda T.; Isoya J.; Ohshima T.; Onoda S.; Morishita N.; O...
APPLIED PHYSICS LETTERS/97(4)/pp.0-0, 2010-07 - EPR identification of two types of carbon vacancies in 4H-SiC
Umeda T; Isoya J; Morishita N; Ohshima T; Kamiya T
PHYSICAL REVIEW B/69(12)/pp.0-0, 2004-03 - EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC
Umeda T; Isoya J; Morishita N; Ohshima T; Kamiya T; Gali ...
PHYSICAL REVIEW B/70(23)/pp.0-0, 2004-12 - EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC
Umeda T; Ishitsuka Y; Isoya J; Son NT; Janzen E; Morishit...
PHYSICAL REVIEW B/71(19)/pp.0-0, 2005-05 - Spin multiplicity and charge state of a silicon vacancy (T-V2a) in 4H-SiC determined by pulsed ENDOR
Mizuochi N; Yamasaki S; Takizawa H; Morishita N; Ohshima ...
PHYSICAL REVIEW B/72(23)/pp.0-0, 2005-12 - Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC
Son NT; Henry A; Isoya J; Katagiri M; Umeda T; Gali A; Ja...
PHYSICAL REVIEW B/73(7)/pp.0-0, 2006-02 - Divacancy in 4H-SiC
Son NT; Carlsson P; ul Hassan; Janzen E; Umeda T; Isoya ...
PHYSICAL REVIEW LETTERS/96(5)/pp.0-0, 2006-02 - Identification of the carbon antisite-vacancy pair in 4H-SiC
Umeda T; Son NT; Isoya J; Janzen E; Ohshima T; Morishita ...
PHYSICAL REVIEW LETTERS/96(14)/pp.0-0, 2006-04 - Pulsed EPR studies of phosphorus shallow donors in diamond and SiC
Isoya J; Katagiri M; Umeda T; Koizumi S; Kanda H; Son NT; Henry...
PHYSICA B-CONDENSED MATTER/376/pp.358-361, 2006-04 - Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories
Umeda T.; Okonogi K.; Ohyu K.; Tsukada S.; Hamada K.; Fuj...
APPLIED PHYSICS LETTERS/88(25)/pp.0-0, 2006-06
- Shallow phosphorous donors in 3C-, 4H-, and 6H-SiC , Proceedings of ICSCRM2005 (Sep. 17-23, 2005, Pittsburgh, USA)