UMEDA Takahide
- Conference, etc.
- Nitrogen doping to channel regions of 4H-SiC MOSFETs characterized by electron spin resonance
Umeda Takahide; Y. Sato; R. Kosugi; M. Okamoto; S. Harada; H. ...
European Conference on Silicon Carbide and Related Materials 2014 (ECSCRM2014)/2014-09-21--2014-09-25 - 4H-SiC中の空孔欠陥と水素の反応と、水素複合欠陥のESR評価
棚井創基; 村上功樹; 奥田貴史; 須田淳; 木本恒暢; 小杉亮治; 大島武; 梅田 享英
第62回応用物理学会春季学術講演会/2015-03-11--2015-03-14 - Electrically detected magnetic resonance (EDMR) study on interface defects in C-face 4H-SiC metal-oxide-semi-conductor field effect transistors
G. W. Kim; S. J. Ma; R. Arai; 岡本光央; 原田信介; 牧野高紘; 大島武; 梅田 享英
第62回応用物理学会春季学術講演会/2015-03-11--2015-03-14 - 容量検出型電子スピン共鳴分光法による4H-SiC MOSFETの結晶欠陥の測定
鹿児山陽平; 岡本光央; 小杉亮治; 原田信介; 牧野高紘; 大島武; 梅田 享英
第62回応用物理学会春季学術講演会/2015-03-11--2015-03-14 - ESR study on hydrogen passivation of intrinsic defects in p-type and semi-insulating 4H-SiC
K. Murakami; S. Tanai; T. Okuda; J. Suda; T. Kimoto; Umeda Tak...
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015)/2015-10-04--2015-10-09 - An interfacial defect complex (the P8/9 centers) in C-face 4H-SiC MOSFET studied by electrically detected magnetic resonance
Umeda Takahide; R. Arai; M. Okamoto; R. Kosugi; S. Harada
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015)/2015-10-04--2015-10-09 - Microscopic difference between dry and wet oxidations of C-face 4H-SiC MOSFFETs studied by electrically detected magnetic resonance
Y. Kagoyama; M. Okamoto; S. Harada; R. Arai; Umeda Takahide
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015)/2015-10-04--2015-10-09 - Electrically detected magnetic resonance study on interface defects responsible for threshold-voltage shift in C-face 4H-SiC MOSFETs
Umeda Takahide; R. Arai; S. J. Ma; G. W. Kim; M. Okamoto; H. Y...
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM2015)/2015-10-04--2015-10-09 - 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察
梅田 享英; 阿部裕太; Y. W. Zhu; 岡本光央; 小杉亮治; 原田信介; 春山盛善; 小野田忍; 大島武
第63回応用物理学春季学術講演会/2016-03-19--2016-03-22 - エピタキシャル基板を使用した4H-SiC MOS窒化界面のESR評価
梅田 享英; 鹿児山陽平; 奥田貴史; 須田淳; 木本暢恒; 小杉亮治; 岡本光央; 原田信介
第63回応用物理学春季学術講演会/2016-03-19--2016-03-22 - C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance
T. Umeda; M. Okamoto; R. Arai; Y. Satoh; R. Kosugi; S. Harada; ...
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2013/2013-09-30--2013-10-04
- Nitrogen doping to channel regions of 4H-SiC MOSFETs characterized by electron spin resonance