UMEDA Takahide
- Articles
- Identification of the carbon antisite-vacancy pair in 4H-SiC
Umeda T; Son NT; Isoya J; Janzen E; Ohshima T; Morishita ...
PHYSICAL REVIEW LETTERS/96(14)/pp.0-0, 2006-04 - Pulsed EPR studies of phosphorus shallow donors in diamond and SiC
Isoya J; Katagiri M; Umeda T; Koizumi S; Kanda H; Son NT; Henry...
PHYSICA B-CONDENSED MATTER/376/pp.358-361, 2006-04 - Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories
Umeda T.; Okonogi K.; Ohyu K.; Tsukada S.; Hamada K.; Fuj...
APPLIED PHYSICS LETTERS/88(25)/pp.0-0, 2006-06
- Identification of the carbon antisite-vacancy pair in 4H-SiC