UEDONO Akira

Researcher's full information

Articles

• Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance
  Nagano F.; Inoue F.; Phommahaxay A.; Peng L.; Chancer...
  ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY/12(3), 2023-03
• Room-temperature nonradiative recombination lifetimes in c-plane Al1-xInxN epilayers nearly and modestly lattice-matched to GaN (0.11=x=0.21)
  Li L. Y.; Shima K.; Yamanaka M.; Egawa T.; Takeuchi ...
  JOURNAL OF APPLIED PHYSICS/132(16), 2022-10
• Vacancy-type defects in TiN/ZrO2/TiN capacitors probed by monoenergetic positron beams
  Uedono Akira; Takahashi Naomichi; Hasunuma Ryu; Harash...
  THIN SOLID FILMS/762, 2022-11
• Mg implantation in AlN layers on sapphire substrates
  Okumura Hironori; Uedono Akira
  JAPANESE JOURNAL OF APPLIED PHYSICS/62(2)/p.020901, 2023-02
• Negatively charged boron vacancy center in diamond
  Umeda T.; Watanabe K.; Hara H.; Sumiya H.; Onoda S.; Uedo...
  PHYSICAL REVIEW B/105(16), 2022-04
• Effects of Hydrogen Incorporation on Mg Diffusion in GaN-Doped with Mg Ions via Ultra-High-Pressure Annealing
  Narita Tetsuo; Uedono Akira; Kachi Tetsu
  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS/259(11), 2022-11
• Effect of conversion on epoxy resin properties: Combined molecular dynamics simulation and experimental study
  Shoji Naoyuki; Sasaki Kohei; Uedono Akira; Taniguchi ...
  POLYMER/254, 2022-07
• Effect of Ultra-High-Pressure Annealing on Defect Reactions in Ion-Implanted GaN Studied by Positron Annihilation
  Uedono Akira; Sakurai Hideki; Uzuhashi Jun; Narita Te...
  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS/259(10), 2022-10
• Organic-Inorganic Hybrid Thermal Insulation Materials Prepared via Hydrosilylation of Polysilsesquioxane Having Hydrosilyl Groups and Triallylisocyanurate
  Takase Sakino; Hamada Takashi; Okada Kenta; Mineoi Su...
  ACS APPLIED POLYMER MATERIALS/4(5)/pp.3726-3733, 2022-05
• Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in AlxGa1-xN films and multiple quantum wells grown by metalorganic vapor phase epitaxy
  Chichibu Shigefusa F.; Miyake Hideto; Uedono Akira
  JAPANESE JOURNAL OF APPLIED PHYSICS/61(5), 2022-05
• Role of Zn on the rapid age-hardening in Mg-Ca-Zn alloys
  Li Z. H.; Sasaki T. T.; Uedono A.; Hono K.
  SCRIPTA MATERIALIA/216, 2022-07
• Structure-Thermal Property Relationships of Polysilsesquioxanes for Thermal Insulation Materials
  Hamada Takashi; Goto Taku; Takase Sakino; Okada Kenta...
  ACS APPLIED POLYMER MATERIALS/4(4)/pp.2851-2859, 2022-04
• Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy
  Li L. Y.; Shima K.; Yamanaka M.; Kojima K.; Egawa T.; Ued...
  APPLIED PHYSICS LETTERS/119(9), 2021-08
• Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam
  Uedono Akira; Tanaka Ryo; Takashima Shinya; Ueno Kats...
  SCIENTIFIC REPORTS/11(1), 2021-10
• Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
  Shima K.; Tanaka R.; Takashima S.; Ueno K.; Edo M.; Kojim...
  APPLIED PHYSICS LETTERS/119(18), 2021-11
• Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation
  Sumiya Masatomo; Takahara Yuki; Alghamdi Amira; Nakaya...
  JOURNAL OF CRYSTAL GROWTH/574, 2021-11
• Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation
  Uedono Akira; Takino Junichi; Sumi Tomoaki; Okayama Y...
  JOURNAL OF CRYSTAL GROWTH/570, 2021-09
• Interfacial Conductivity Enhancement and Pore Confinement Conductivity-Lowering Behavior inside the Nanopores of Solid Silica-gel Nanocomposite Electrolytes
  Sagara Akihiko; Yabe Hiroki; Chen Xubin; Put Brecht; ...
  ACS APPLIED MATERIALS & INTERFACES/13(34)/pp.40543-40551, 2021-09
• Thermal Insulating Property of Silsesquioxane Hybrid Film Induced by Intramolecular Void Spaces
  Hamada Takashi; Nakanishi Yuki; Okada Kenta; Tsukada ...
  ACS APPLIED POLYMER MATERIALS/3(7)/pp.3383-3391, 2021-07
• Optical and electrical properties of silicon-implanted α-Al2O3
  Hironori Okumura; Riena Jinno; Akira Uedono; Masataka Imura
  Japanese Journal of Applied Physics/60(10), 2021-09
• Effect of free-volume holes on static mechanical properties of epoxy resins studied by positron annihilation and PVT experiments
  Zhang HJ; Sellaiyan Selvakumar; Sako K; A Uedono; Y Tanigu...
  Polymer/190/p.122225, 2020-03
• Morphological characterization and mechanical behavior by dicing and thinning on direct bonded Si wafer
  Inoue Fumihiro; Podpod Arnita; Peng Lan; Phommahaxay ...
  JOURNAL OF MANUFACTURING PROCESSES/58/pp.811-818, 2020-10
• Dynamic Observation and Theoretical Analysis of Initial O-2 Molecule Adsorption on Polar and m-Plane Surfaces of GaN
  Sumiya Masatomo; Sumita Masato; Asai Yuya; Tamura Ryo...
  JOURNAL OF PHYSICAL CHEMISTRY C/124(46)/pp.25282-25290, 2020-11
• Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam
  Akazawa Masamichi; Kamoshida Ryo; Murai Shunta; Kachi ...
  JAPANESE JOURNAL OF APPLIED PHYSICS/60(1), 2021-01
• Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam
  Uedono Akira; Sakurai Hideki; Narita Tetsuo; Sierakows...
  SCIENTIFIC REPORTS/10(1), 2020-10
  
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