上殿 明良(ウエドノ アキラ)
- 所属
- 数理物質系
- 職名
- 教授
- 研究課題
III属窒化物半導体のイオン注入不純物活性化機構の解明と点欠陥制御 2021-04 -- 2025-03 上殿 明良 日本学術振興会/基盤研究(B) 17,290,000円 ナノ空隙検出のためのサブミリメートル空間分解能を有する陽電子消滅装置の開発 2021-07 -- 2023-03 上殿 明良 日本学術振興会/挑戦的研究(萌芽) 6,370,000円 陽電子消滅による結晶特異構造のキャリア捕獲・散乱ダイナミックスの評価 2016-06 -- 2021-03 上殿 明良 日本学術振興会/新学術領域研究(研究領域提案型) 50,700,000円 低速陽電子ビームによる絶縁膜/Si界面の遷移層及び歪の研究 2007 -- 2011-03 上殿 明良 日本学術振興会/基盤研究(B) 14,560,000円 - 取得学位
工学博士 Ph.D. in Engineering - 論文
- Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements
Shima K.; Narita T.; Uedono A.; Bockowski M.; Suda J...
JOURNAL OF APPLIED PHYSICS/137(23), 2025-06-21 - Material-Mechanistic Interplay in SiCN Wafer Bonding for 3D Integration
Kitagawa Hayato; Sato Ryosuke; Ebiko Sodai; Nagata At...
ACS OMEGA/10(25)/pp.27575-27584, 2025-06-23 - Defects modification in thermoelectric Mg2Sn (Ge) epitaxial thin films through modulation of Mg flux rate in MBE
Senados Kenneth Magallon; Aizawa Takashi; Ohkubo Isao; ...
JOURNAL OF PHYSICS-ENERGY/7(3), 2025-07-31 - Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy
Chichibu S. F.; Kikuchi K.; Moody B.; Mita S.; Collaz...
APPLIED PHYSICS LETTERS/126(11), 2025-03 - Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography
Uedono Akira; Fleischmann Claudia; Soulie Jean-Philipp...
ACS APPLIED ELECTRONIC MATERIALS/6(8)/pp.5894-5902, 2024-07-10 - Annealing behaviors of open spaces and gas desorption in chemical vapor deposited SiO2 studied with monoenergetic positron beams
Uedono Akira; Hasunuma Ryu; Onishi Koki; Kitagawa Hay...
JOURNAL OF APPLIED PHYSICS/136(4), 2024-07-28 - Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Chichibu Shigefusa F.; Shima Kohei; Uedono Akira; Ishi...
JOURNAL OF APPLIED PHYSICS/135(18), 2024-05-14 - Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method
Shima K.; Kurimoto K.; Bao Q.; Mikawa Y.; Saito M.; ...
APPLIED PHYSICS LETTERS/124(18), 2024-04-29 - Temporary Direct Bonding by Low Temperature Deposited SiO2 for Chiplet Applications
Onishi Koki; Kitagawa Hayato; Teranishi Shunsuke; Uedo...
ACS APPLIED ELECTRONIC MATERIALS/6(4)/pp.2449-2456, 2024-04-01 - Vacancy-Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion-Implanted GaN Studied by Positron Annihilation
Uedono Akira; Tanaka Ryo; Takashima Shinya; Ueno Kats...
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS/261(5), 2024-05 - Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy
Kimura T.; Shimazu H.; Kataoka K.; Itoh K.; Narita T...
APPLIED PHYSICS LETTERS/124(5), 2024-01-29 - Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE
Sierakowski Kacper; Jakiela Rafal; Jaroszynski Piotr; ...
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING/167, 2023-11-15 - Systematic Search for Stabilizing Dopants in ZrO2 and HfO2 Using First-Principles Calculations
Harashima Yosuke; Koga Hiroaki; Ni Zeyuan; Yonehara T...
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING/36(4)/pp.543-546, 2023-11 - Impact of nanosecond laser annealing on vacancies in electroplated Cu films studied by monoenergetic positron beams
Uedono Akira; Nogami Takeshi; Gluschenkov Oleg; Sulehr...
JOURNAL OF APPLIED PHYSICS/134(13), 2023-10-07 - Finite temperature effects on the structural stability of Si-doped HfO2 using first-principles calculations
Harashima Y.; Koga H.; Ni Z.; Yonehara T.; Katouda M...
APPLIED PHYSICS LETTERS/122(26), 2023-06-26 - Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam
Uedono Akira; Kimura Yasuki; Hoshii Takuya; Kakushima ...
JOURNAL OF APPLIED PHYSICS/133(22), 2023-06-14 - Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application
Sumiya Masatomo; Goto Osamu; Takahara Yuki; Imanaka Y...
JAPANESE JOURNAL OF APPLIED PHYSICS/62(8), 2023-08-01 - Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance
Nagano F.; Inoue F.; Phommahaxay A.; Peng L.; Chancer...
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY/12(3), 2023-03 - Room-temperature nonradiative recombination lifetimes in c-plane Al1-xInxN epilayers nearly and modestly lattice-matched to GaN (0.11=x=0.21)
Li L. Y.; Shima K.; Yamanaka M.; Egawa T.; Takeuchi ...
JOURNAL OF APPLIED PHYSICS/132(16), 2022-10 - Vacancy-type defects in TiN/ZrO2/TiN capacitors probed by monoenergetic positron beams
Uedono Akira; Takahashi Naomichi; Hasunuma Ryu; Harash...
THIN SOLID FILMS/762, 2022-11 - Mg implantation in AlN layers on sapphire substrates
Okumura Hironori; Uedono Akira
JAPANESE JOURNAL OF APPLIED PHYSICS/62(2)/p.020901, 2023-02 - Negatively charged boron vacancy center in diamond
Umeda T.; Watanabe K.; Hara H.; Sumiya H.; Onoda S.; Uedo...
PHYSICAL REVIEW B/105(16), 2022-04 - Effects of Hydrogen Incorporation on Mg Diffusion in GaN-Doped with Mg Ions via Ultra-High-Pressure Annealing
Narita Tetsuo; Uedono Akira; Kachi Tetsu
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS/259(11), 2022-11 - Effect of conversion on epoxy resin properties: Combined molecular dynamics simulation and experimental study
Shoji Naoyuki; Sasaki Kohei; Uedono Akira; Taniguchi ...
POLYMER/254, 2022-07 - Effect of Ultra-High-Pressure Annealing on Defect Reactions in Ion-Implanted GaN Studied by Positron Annihilation
Uedono Akira; Sakurai Hideki; Uzuhashi Jun; Narita Te...
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS/259(10), 2022-10 - さらに表示...
- Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements
- 著書
- Point defects in GaN and related group-III nitrides studied by means of positron annihilation
Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
GALLIUM NITRIDE MATERIALS AND DEVICES VI/SPIE-INT SOC OPTICAL ENGINEERING, 2011-01 - Application of positron annihilation technique to front and backend processes for modern LSI devices
Uedono A.; Ishibashi S.; Oshima N.; Ohdaira T.; Suzuki R.
12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12)/IOP PUBLISHING LTD, 2011-01 - Study of high-k gate dielectrics by means of positron annihilation
Uedono A.; Naito T.; Otsuka T.; Ito K.; Shiraishi K.; Yam...
Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10/WILEY-V C H VERLAG GMBH/pp.3599-3604, 2007-01 - Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams
Uedono A.; Inoue N.; Hayashi Y.; Eguchi K.; Nakamura T.; ...
PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE/IEEE/pp.75-77, 2009-01 - Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam
Uedono A; Kiyohara M; Shimoyama K; Matsunaga Y; Yasui N; ...
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS/TRANS TECH PUBLICATIONS LTD/pp.201-203, 2004-01 - Point defects in thin HfAIO(x) films probed by monoenergetic positron beams
Uedono A; Mitsuhashi R; Horiuchi A; Torii K; Yamabe K; Ya...
FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES/MATERIALS RESEARCH SOCIETY/pp.43-48, 2004-01 - Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE
Shimizu Y; Kobayashi N; Uedono A; Okada Y
COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS/IOP PUBLISHING LTD/pp.255-258, 2005-01 - Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications
Shimizu Yukiko; Miyashita Naoya; Mura Yusuke; Uedono Aki...
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2/IEEE/pp.811-814, 2006-01
- Point defects in GaN and related group-III nitrides studied by means of positron annihilation
- 会議発表等
- 筑波大学タンデム加速器施設UTTACの現状(2022年度)
森口 哲朗; 石井聡; 高橋努; 大和良広; 吉田哲郎; 松村万寿美; 中沢智幸; 笹公和; 上殿明良
第35回タンデム加速器及びその周辺技術の研究会/2023-06-22--2023-06-23 - Understanding the effect of nanoporosity on optimizing the performance of self-healing materials for anti-corrosion applications
Sellaiyan Selvakumar; S. V. Smith A. E. Hughes A. Mille...
SLOPOS-12/2010-08-01--2010-08-06 - Positron annihilation lifetime spectroscopy of mechanically milled protein fibre powders and their free volume aspects
Patil K.; Sellaiyan Selvakumar; R. Rajkhowa T. Tsuzuki ...
ICPA-16,/2012-08-19--2012-08-24 - Defect related photoluminescence study on Eu3+ activated Gd2O3 phosphors
Selvalakshmi T.; Sellaiyan Selvakumar; Uedono A.; Mori A...
IONS conference-2015/2015-06-26--2015-06-29 - Positron annihilation studies of free volumes in epoxy resins for CFRP
Uedono A.; Zhang H. J.; Sellaiyan Selvakumar; Kakizaki T...
2nd Symposium on SIP Innovative Measurement and Analysis for Structural Materials (SIP-IMASM)/2016-09-27--2016-09-29 - Effect of free volumes on mechanical properties of epoxy resins for carbon-fiber-reinforced polymers
Kakizaki T.; Zhang H. J.; Sellaiyan Selvakumar; Uedono A...
2nd Symposium on SIP Innovative Measurement and Analysis for Structural Materials (SIP-IMASM)/2016-09-27--2016-09-29 - SIP-IMASM2016
Zhang H. J.; Sellaiyan Selvakumar; Kakizaki T.; Uedono A...
2nd Symposium on SIP Innovative Measurement and Analysis for Structural Materials (SIP-IMASM)/2016-09-27--2016-09-29 - Evaluation Free-Volume Hole Properties of Epoxy Resins for CFRP studied by Positron Annihilation and PVT Experiments
Zhang H. J.; Sellaiyan Selvakumar; Sako K.; Uedono A.; Y....
The 3rd Symposium on SIP Innovative measurement and analysis for structural materials (SIP-IMASM 2017)/2017-10-03--2017-10-05 - Behaviours of Free Volumes During Curing Processes of Epoxy Resins for CFRP Studied by Positron Annihilation
Uedono A.; Sellaiyan Selvakumar; Zhang H. J.; Sako K.; Y....
The 3rd Symposium on SIP Innovative measurement and analysis for structural materials (SIP-IMASM 2017) and TIA-Fraunhofer workshop/2017-10-03--2017-10-05 - Defect analysis of equiatomic FeCo by positron lifetime spectroscopy
Rajesh P.; Sellaiyan Selvakumar; Uedono A.; T. Prakash R...
Recent Trends in Condensed matter Physics (RTCMP 2017)/2017-10-31--2017-11-03 - Defect Studies on Yttrium Doped CuO By Positron Annihilation Spectroscopy
Sellaiyan Selvakumar; L. Vimala Devi; Zhang H.J.; Uedono ...
4th International Conference on Nano science and Nanotechnology (ICONN-2017)/2017-08-09--2017-08-11 - Positron Annihilation study of damage induced by 150 MeV Ag12+ SHI irradiation on 6H-SiC
Sivaji K.; Sellaiyan Selvakumar; Uedono A.; Kanjilal D.
Third DAE-BRNS Trombay Positron Meeting (POSITRON-2018)/2018-03-23--2018-03-24 - Defect studies on chemically synthesized FeCo by positron lifetime spectroscopy
Rajesh P.; Sellaiyan Selvakumar; Uedono A.; T. Prakash R...
Materials Proceedings Of 29th Annual General Meeting Of Materials Research Society Of India And National Symposium On Advances In Functional And Exotic Materials, Material Research Society of India (2018)/2018-02-14--2018-02-16 - Effect of Free-Volume Holes on Dynamic Mechanical Properties of Epoxy Resins for Carbon-Fiber-Reinforced Polymers Studied by Positron Annihilation
Zhang H.; Sellaiyan Selvakumar; Kakizaki T.; Uedono A.; Y...
APS Meeting 2019/2019-03-04--2019-03-08 - Effective photo degradation of cationic dye using MWCNT/MnFe2O4 nanocomposites
Monalisa Hazarika P. Chinnamuthu ; Sellaiyan Selvakumar; ...
5th International Conference on Nano science and Nanotechnology (ICONN-2019)/2019-01-28--2019-01-30 - Investigation on vacancy type defects in Fe doped SrSnO3 perovskite nanostructures by Positron annihilation spectroscopy
Muralidharan M.; Sellaiyan Selvakumar; Uedono A.; Sivaji K.
International Workshop on Positron Studies of Defects 2020 (PSD-20)/2022-03-22--2022-03-27 - Defect Identification in La and Tb doped CuO Semiconductor nanocrystallite using Positron Annihilation Spectroscopy
L. Vimala Devi; Sellaiyan Selvakumar; Sivaji K.; Uedono A.
5th International Conference on Nano science and Nanotechnology (ICONN-2019),/2019-01-28--2019-01-30 - Defect Related Optical and Magnetic Properties of Combustion Route Synthesized MgO:Er +X (X=Li, Na, K) Nanoparticles
Sellaiyan Selvakumar; J. Sivasankari L. Vimala Devi K. ...
5th International Conference on Nano science and Nanotechnology (ICONN-2019)/2019-01-28--2019-01-30 - Defect Studies of ZnFe2O4/MWCNT by Positron Annihilation Lifetime and Doppler Broadening Spectroscopy
Sellaiyan Selvakumar; Uedono A.; M. Hazarika S. Jimkeli ...
7th International Conference on Nano science and Nanotechnology (ICONN-2023)/2023-03-27--2023-03-29 - Positron Annihilation Studies on MWCNT/MnFe2O4 Nanocomposites
Sellaiyan Selvakumar; Uedono A.; Monalisa Hazarika J. P....
19th International Conference on Positron Annihilation (ICPA-19)/2022-08-22--2022-08-26 - Electrical properties of silicon-implanted alpha-Al2O3
Okumura Hironori; Jinno Riena; UEdono Akira; Imura Masataka
The 4th International Workshop on Gallium Oxide and Related Materials/2022-10-23--2022-10-27 - Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy
Uedono Akira; Dickmann Marcel; Egger Werner; Hugenschm...
Conference on Gallium Nitride Materials and Devices XV/2020-02-04--2020-02-06 - Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors
Chichibu Shigefusa F.; Shima Kohei; Kojima Kazunobu; I...
Conference on Gallium Nitride Materials and Devices XV/2020-02-04--2020-02-06 - Vacancy-type defects in GaN-based power device structure - defect characterization in ion implanted GaN and Al2O3/GaN -
Uedono Akira; Egger Werner; Hugenschmidt Christoph; Is...
Compound Semiconductor Week (CSW) Conference/2019-05-19--2019-05-23 - Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3
Ishibashi S.; Uedono A.
15th International Workshop on Slow Positron Beam Techniques and Applications (SLOPOS)/2019-09-02--2019-09-06 - さらに表示...
- 筑波大学タンデム加速器施設UTTACの現状(2022年度)
- 担当授業科目
2024-10 -- 2025-02 電子・物理工学特別研究IVA 筑波大学 2024-10 -- 2025-02 電子・物理工学特別研究IIIA 筑波大学 2024-04 -- 2024-08 電子・物理工学特別研究VB 筑波大学 2024-10 -- 2025-02 電子・物理工学特別研究IA 筑波大学 2024-04 -- 2024-08 電子・物理工学特別研究IIIB 筑波大学 2024-04 -- 2024-08 電子・物理工学特別研究IIB 筑波大学 2024-11 -- 2025-02 ナノ物性III 筑波大学 2024-10 -- 2025-02 電子・物理工学特別研究VB 筑波大学 2024-04 -- 2024-08 電子・量子工学専攻実験A 筑波大学 2024-10 -- 2025-02 電子・物理工学特別研究IVB 筑波大学 さらに表示... - 一般講演
- Using X-ray Tomography, PALS and Raman Spectroscopy to Characterise Inhibitors in Epoxy Coatings
Hughes A.E.; S. Mayo Y. S. Yang T. Markley S. V. Smith...
COSI-2011/2011-06-27--2011-07-01
- Using X-ray Tomography, PALS and Raman Spectroscopy to Characterise Inhibitors in Epoxy Coatings
(最終更新日: 2025-07-30)