UEDONO Akira
- Articles
- Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
Z.Q. Chen; A. Uedono; Y.Y. Li; J.S. He
Jpn. J. Appl. Phys. 41, 2146-2149 (2002)./41/p.2146-2149, 2002-01 - Defects in Silicon-on-Insulator Wafers and their hydrogen interaction Studied by Monoenergetic Positron Beams
A. Uedono; Z.Q. Chen; A. Ogura; R. Suzuki; T. Ohdaira; T....
J. Appl. Phys. 91, 6488-6492 (2002)./91/p.6488-6492, 2002-01 - Defects-Induced Volume Deviations in ZnSe
H. Ebe; Z.Q. Chen; A. Uedono; B.P. Zhang; Y. Segawa; K. ...
J. Cryst. Growth 237, 1566-1569 (2002)./237/p.1566-1569, 2002-01 - Positron Annihilation in SiO2-Si Studied by a Pulsed Slow Positron Beam
R. Suzuki; T. Ohdaira; A. Uedono; Y. Kobayashi
Appl. Surf. Sci. 194, 89-96 (2002)./194/p.89-96, 2002-01 - Oxygen-Related Defects and Their Annealing Behavior in Low-Dose Separation-by-Implanted Oxygen (SIMOX) Wafers Studied by Slow Positron Beams
Z.Q. Chen; A. Uedono; A. Ogura; H. Ono; R. Suzuki; T. Oh...
Appl. Surf. Sci. 194, 112-115 (2002)./194/p.112-115, 2002-01 - Study of Oxygen Vacancies in SrTiO3 by Positron Annihilation
A. Uedono; K. Shimayama; M. Kiyohara; Z.Q. Chen; K. Yamabe
J. Appl. Phys. 92, 2697-2702 (2002)./92/p.2697-2702, 2002-01 - Epitaxial Growth of BaTiO3/SrTiO3 Structures on SrTiO3 Substrate with Automatic Feeding of Oxygen from the Substrate
K. Shimoyama; M. Kiyohara; K. Yamabe; A. Uedono
J. Appl. Phys. 92, 4625-4630 (2002)./92/p.4625-4630, 2002-01 - Homeoepitaxial growth of SrTiO3 in an ultrahigh vacuum with automatic feeding of oxygen from the substrate at temperatures as low as 370oC
K. Shimoyama; M. Kiyohara; A. Uedono; K. Yamabe
Jpn. J. Appl. Phys. 41, L269-L271 (2002)./41/p.L269-L271, 2002-01 - Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
T. Ohshima; A. Uedono; O. Eryu; K.K. Lee; K. Abe; H. Ito...
Materials Science Forum/433/436/p.633-636, 2003-01 - Degradation of Dielectric Characterizations of Underlying Ultrathin SiO2 films by Al Adsorption in High Vacuum
M. Tanabe; M. Goto; A. Uedono; K. Yamabe
Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan, p. 18-19./p.18-19., 2003-01 - Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation
A. Uedono; R. Mitsuhashi; A. Horiuchi; K. Torii; K. Yama...
Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan, p. 120-123./p.120-123., 2003-01 - Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks
R. Mitsuhashi; A. Horiuchi; A. Uedono; K. Torii
Extended Abstracts of International Workshop on Gate Insulator 2003, November 6-7, 2003, Tokyo, Japan, p. 150-154/p.150-154, 2003-01 - Vacancy-type defects in SOI wafers probed by a monoenergetic positron beam
A. Uedono; A. Ogura; N. Hattori; J. Kudo; S. Nishikawa
Proceedings of the Forum on the Science and Technology of Silicon Materials 2003, November 25-27 (2003) Kanagawa, Japan, p. 272-280./p.272-280., 2003-01 - Positron Annihilation Study of Free Volume Holes in Polymers and Polymer Blends
Z.Q. Chen; A. Uedono; T. Suzuki; J.S. He
J. Radioanalytical and Nuclear Chemistry 255, 291-294 (2003)./255/p.291-294, 2003-01 - Defects in ZnO Thin Films Grown on ScAlMgO4 Substrates Probed by a Monoenergetic Positron Beam
A. Uedono; T. Koida; A. Tsukazaki; M. Kawasaki; Z.Q. Che...
J. Appl. Phys. 93, 2481-2485 (2003)./93/p.2481-2485, 2003-01 - Hydrogen-Terminated Defects in Ion-Implanted Silicon Probed by Monoenergetic Positron Beams
A. Uedono; T. Mori; K. Morisawa; K. Murakami; T. Ohdaira...
J. Appl. Phys. 93, 3228-3234 (2003)./93/p.3228-3234, 2003-01 - Defects in Eu- and Tb-doped GaN Probed Using a Monoenergetic Positron Beam
A. Uedono; H. Bang; K. Horibe; S. Morishima; K. Akimoto
J. Appl. Phys. 93, 5181-5184 (2003)./93/p.5181-5184, 2003-01 - Improvement of Hydrogen Absorption Rate of Pd by Ion Implantation
H. Abe; H. Uchida; Y. Azuma; A. Uedono; Z.Q. Chen; H. Ito
Nucl. Inst. & Methods B 206, 224-227 (2003)./206/p.224-227, 2003-01 - Defects in CeO2/SrTiO3 fabricated by automatic feeding epitaxy probed using positron annihilation
A. Uedono; K. Shimoyama; M. Kiyohara; K. Yamabe
J. Appl. Phys. 94, 5193-5198 (2003)./94/p.5193-5198, 2003-01 - Defects Introduced into SrTiO3 by Auto-Feeding-Epitaxy Studied Using Positron Annihilation Technique
A. Uedono; M. Kiyohara; K. Shimoyama; K. Yamabe; T. Ohda...
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING/6/p.367-369, 2003-01 - Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO
T. Koida; S. F. Chichibu; A. Uedono A. Tsukazaki; M. Kaw...
Appl. Phys. Lett. 82, 532-534 (2003)./82/p.532-534, 2003-01 - Suppression of the transient current of MOS consisting of HfAlOx as gate dielectrics studied by positron annihilation
A. Uedono; R. Mitsuhashi; A. Horiuchi; K. Torii; K. Yama...
Extended Abstracts of 2004 International Workshop on Dielectric Thin Films for Future ULSI Device, May 26-28 (2004) Tokyo, Japan, p. 120-123./p.120-123., 2004-01 - Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam
A. Uedono; M. Kiyohara; K. Shimoyama; Y. Matsunaga; N...
Materials Science Forum 445-446, 201-203 (2004)./p.201-203, 2004-01 - Point defects in thin HfAlOx films probed by monoenergetic positron beams
A. Uedono; R. Mitsuhashi; A. Horiuchi; K. Torii; K. Yama...
Materials Research Society Symposium Proceedings/786/p.E1.2.1-E1.2.6, 2004-01 - Direct observation of vacancy defects in electroplated Cu films
T. Suzuki; A.Uedono; T. Nakamura; Y. Mizushima; H. Kitada...
Proc. 2004 IEEE Int. Interconnect. Tech. Conf., June 7-9 (2004) San Francisco, USA, p. 87-89./p.87-89., 2004-01 - more...
- Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation