UEDONO Akira
- Articles
- 研究紹介 陽電子による先端半導体材料の評価
上殿 明良; 鈴木 良一; 大平 俊行
応用物理/74(9)/pp.1223-1226, 2005-09 - In-situ characterization of free-volume holes in polymer thin films under controlled humidity conditions with an atmospheric positron probe microanalyzer
Zhou Wei; Chen Zhe; Oshima Nagayasu; Ito Kenji; O'Rourke ...
APPLIED PHYSICS LETTERS/101(1), 2012-07 - Variation of Chemical Vapor Deposited SiO2 Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
Sometani Mitsuru; Hasunuma Ryu; Ogino Masaaki; Kuribayash...
JAPANESE JOURNAL OF APPLIED PHYSICS/51(2)/pp.21101-021101-3, 2012-02 - 21aJA-12 Development of a method for evaluating pores of samples mounted in air
大島 永康; オローク ブライアン; 黒田 隆之助; 鈴木 良一; 伊藤 賢志; 柳下 宏; 天神林 和樹; 箇井...
Meeting abstracts of the Physical Society of Japan/66(2)/p.971, 2011-08 - 27pTN-4 Development of a method for guiding slow positron beam into air through a vacuum window
大島 永康; オローク ブライアン; 黒田 隆之助; 鈴木 良一; 渡邉 宏理; 窪田 翔二; 天神林 和樹; 上...
Meeting abstracts of the Physical Society of Japan/66(1)/p.985, 2011-03 - Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
OSHIMA Nagayasu; O'ROURKE Brian E.; KURODA Ryunosuke; SUZ...
Applied physics express/4(6)/pp.66701-1, 2011-06 - Collateral evidence for an excellent radiative performance of AlxGa1-xN alloy films of high AlN mole fractions
Chichibu S. F.; Hazu K.; Onuma T.; Uedono A.
APPLIED PHYSICS LETTERS/99(5), 2011-08 - Positron Annihilation Study on Defects in HfSiON Films Deposited by Electron-Beam Evaporation
Yuan Guoliang; Lu Xubing; Ishiwara Hiroshi; Uedono Akira
Jpn J Appl Phys/48(11)/pp.111404-111404-4, 2009-11 - Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
Uedono Akira; Tsutsui Kazuo; Ishibashi Shoji; Hiromichi ...
Jpn J Appl Phys/49(5)/pp.51301-051301-6, 2010-05 - Investigating the binding properties of porous drug delivery systems using nuclear sensors (radiotracers) and positron annihilation lifetime spectroscopy-Predicting conditions for optimum performance
Mume Eskender; Lynch Daniel E.; Uedono Akira; Smith Suza...
DALTON TRANSACTIONS/40(23)/pp.6278-6288, 2011-01 - Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
Oshima Nagayasu; O'Rourke Brian E.; Kuroda Ryunosuke; Suz...
APPLIED PHYSICS EXPRESS/4(6)/pp.0-0, 2011-06 - Structure-Modification Model of Porogen-Based Porous SiOC Film with Ultraviolet Curing
Oka Yoshihiro; Uedono Akira; Goto Kinya; Hirose Yukinori...
JAPANESE JOURNAL OF APPLIED PHYSICS/50(5:Part 2 Sp. Iss. SI)/pp.05EB06-05EB06-5, 2011-05 - Impact of Cu/III ratio on the near-surface defects in polycrystalline CuGaSe2 thin films
Islam M. M.; Uedono A.; Ishibashi S.; Tenjinbayashi K.; S...
APPLIED PHYSICS LETTERS/98(11)/pp.0-0, 2011-03 - Material Selection for the Metal Gate/High-k Transistors
AKASAKA Y.; MIYAGAWA K.; KARIYA A.; SHOJI H.; AOYAMA T.; ...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2004(0)/pp.196-197, 2004-09 - 26pYS-5Positronium emission from solid surface measured by time of flight method
栗原 俊一; 上殿 明良; 池田 光男; 榎本 収志; 大越 隆夫; 大澤 哲; 小川 雄二郎; 柿原 和久; 設...
Meeting abstracts of the Physical Society of Japan/60(1)/p.926, 2005-03 - Characterization of Open Spaces in High-κ Materials by Monoenergetic Positron Beams
上殿 明良; 後藤 正和; 樋口 恵一; 池内 恒平; ABUDUL Hamid Alaa Salah; 山部 ...
Journal of the Surface Science Society of Japan/26(5)/pp.268-273, 2005-05 - Characterization of Open Volumes in High-k Gate Dielectrics by Using Monoenergetic Positron Beams
上殿 明良; 大塚 崇; 伊東 健一; 白石 賢二; 山部 紀久夫; 宮崎 誠一; 梅澤 直人; 知京 豊裕; 大...
Technical report of IEICE. SDM/106(108)/pp.25-30, 2006-06 - Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
MIYAGAWA Yoshihiro; MURATA Tatsunori; NISHIDA Yukio; NAKA...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2006(0)/pp.158-159, 2006-09 - Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
INUMIYA Seiji; UEDONO Akira; MIYAZAKI Seiichi; OHTSUKA S...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2006(0)/pp.394-395, 2006-09 - Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
UMEZAWA N.; SHIRAISHI K.; MIYAZAKI S.; UEDONO A.; AKASAKA...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2006(0)/pp.460-461, 2006-09 - Defects in Electroplated Cu and their Impact on Stress Migration Reliability
UEDONO A.; SUZUKI T.; NAKAMURA T.; OHDAIRA T.; SUZUKI R.
Extended abstracts of the ... Conference on Solid State Devices and Materials/2006(0)/pp.1022-1023, 2006-09 - Microstructural Characterization of Electroplated Copper Films on Copper-Alloy Seed Layer(Functional Interfaces for Analytical Chemistry)
廣瀬 幸範; 本田 和仁; 前川 和義; 宮崎 博史; 上殿 明良; 辻 幸一
Japan analyst/56(6)/pp.465-470, 2007-06 - 23pVE-10 Imaging of defect profiles with an positron probe micro analyzer
大島 永康; 鈴木 良一; 大平 俊行; 木野村 淳; 鳴海 貴允; 上殿 明良; 藤浪 真紀
Meeting abstracts of the Physical Society of Japan/63(2)/p.896, 2008-08 - 27aRE-7 Positron lifetimes in polymers measured with a positron probe micro analyzer
大島 永康; 鈴木 良一; 大平 俊行; 木野村 淳; 鳴海 貴允; 上殿 明良; 岡 壽崇; 藤浪 真紀
Meeting abstracts of the Physical Society of Japan/64(1)/p.934, 2009-03 - Detection of Point Defects in Nitride Semiconductors by Means of Positron Annihilation(Defects in Nitride Semiconductors)
上殿 明良; 石橋 章司; 大島 永康; 大平 俊行; 鈴木 良一
Journal of the Japanese Association of Crystal Growth/36(3)/pp.155-165, 2009-10 - more...
- 研究紹介 陽電子による先端半導体材料の評価