UEDONO Akira

Researcher's full information

Articles

• Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy
  Onuma T.; Shibata T.; Kosaka K.; Asai K.; Sumiya S.; Tana...
  JOURNAL OF APPLIED PHYSICS/105(2)/pp.0-0, 2009-01
• Vacancy-type defects in Mg-doped InN probed by means of positron annihilation
  Uedono A.; Nakamori H.; Narita K.; Suzuki J.; Wang X.; Ch...
  JOURNAL OF APPLIED PHYSICS/105(5)/pp.0-0, 2009-03
• Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
  Uedono A.; Ishibashi S.; Keller S.; Moe C.; Cantu P.; Kat...
  JOURNAL OF APPLIED PHYSICS/105(5)/pp.0-0, 2009-03
• Behavior of oxygen vacancies in BiFeO3/SrRuO3/SrTiO3(100) and DyScO3(100) heterostructures
  Yuan G. L.; Uedono A.
  APPLIED PHYSICS LETTERS/94(13)/pp.0-0, 2009-03
• A study on vacancy-type defects in the electroless Cu measured with a monoenergetic positron beam
  Yamanaka Kimihiro; Uedono Akira
  SCRIPTA MATERIALIA/61(1)/pp.8-11, 2009-07
• Rapid three-dimensional imaging of defect distributions using a high-intensity positron microbeam
  Oshima N.; Suzuki R.; Ohdaira T.; Kinomura A.; Narumi T....
  APPLIED PHYSICS LETTERS/94(19)/pp.0-0, 2009-05
• Relationship between defects and optical properties in Er-doped GaN
  Chen Shaoqiang; Uedono Akira; Seo Jongwon; Sawahata Junj...
  JOURNAL OF CRYSTAL GROWTH/311(10)/pp.3097-3099, 2009-05
• Point defects in group-III nitride semiconductors studied by positron annihilation
  Uedono A.; Ishibashi S.; Ohdaira T.; Suzuki R.
  JOURNAL OF CRYSTAL GROWTH/311(10)/pp.3075-3079, 2009-05
• The dependence of oxygen vacancy distributions in BiFeO3 films on oxygen pressure and substrate
  Yuan G. L.; Martin L. W.; Ramesh R.; Uedono A.
  APPLIED PHYSICS LETTERS/95(1)/pp.0-0, 2009-07
• Thermal stability of semi-insulating property of Fe-doped GaN bulk films studied by photoluminescence and monoenergetic positron annihilation techniques
  Kubota Masashi; Onuma Takeyoshi; Ishihara Yujiro; Usui A...
  JOURNAL OF APPLIED PHYSICS/105(8)/pp.0-0, 2009-04
• A positron annihilation lifetime measurement system with an intense positron microbeam
  Oshima Nagayasu; Suzuki Ryoichi; Ohdaira Toshiyuki; Kinom...
  RADIATION PHYSICS AND CHEMISTRY/78(12)/pp.1096-1098, 2009-12
• Characterization of Low-k/Cu Damascene Structures Using Monoenergetic Positron Beams
  Uedono Akira; Inoue Naoya; Hayashi Yoshihiro; Eguchi Kaz...
  JAPANESE JOURNAL OF APPLIED PHYSICS/48(12)/pp.0-0, 2009-12
  
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• Metal Ion Binding Properties of Novel Wool Powders
  Naik Radhika; Wen Guiqing; Dharmaprakash M. S.; Hureau S...
  JOURNAL OF APPLIED POLYMER SCIENCE/115(3)/pp.1642-1650, 2010-02
• Epitaxial DyScO3 films as passivation layers suppress the diffusion of oxygen vacancies in SrTiO3
  Yuan Guoliang; Nishio Kazunori; Lippmaa Mikk; Uedono Akira
  JOURNAL OF PHYSICS D-APPLIED PHYSICS/43(2)/pp.0-0, 2010-01
• Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN
  Chen Shaoqiang; Uedono Akira; Ishibashi Shoji; Tomita Sh...
  APPLIED PHYSICS LETTERS/96(5)/pp.0-0, 2010-02
• Identification of extremely radiative nature of AlN by time-resolved photoluminescence
  Onuma T.; Hazu K.; Uedono A.; Sota T.; Chichibu S. F.
  APPLIED PHYSICS LETTERS/96(6)/pp.0-0, 2010-02
• Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar, 10(1)over-bar(1)over-bar GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
  Onuma T.; Uedono A.; Asamizu H.; Sato H.; Kaeding J. F.; ...
  APPLIED PHYSICS LETTERS/96(9)/pp.0-0, 2010-03
• Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam
  Uedono Akira; Tsutsui Kazuo; Ishibashi Shoji; Watanabe H...
  JAPANESE JOURNAL OF APPLIED PHYSICS/49(5:Part 1)/pp.0-0, 2010-05
• Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy
  Yoshikawa Akihiko; Wang Xinqiang; Ishitani Yoshihiro; Ued...
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE/207(5)/pp.1011-1023, 2010-05
• Characterization of photoresists for ArF-excimer laser lithography using monoenergetic positron beams
  Uedono A; Ohdaira T; Suzuki R; Mikado T; Fukui S; Kimura ...
  JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS/42(2)/pp.341-346, 2004-01
• Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam
  Uedono A; Suzuki T; Nakamura T
  JOURNAL OF APPLIED PHYSICS/95(3)/pp.913-918, 2004-02
• Radiative and nonradiative excitonic transitions in nonpolar (11(2)over-bar-0) and polar (000(1)over-bar) and (0001) ZnO epilayers
  Koida T; Chichibu SF; Uedono A; Sota T; Tsukazaki A; Kawasaki M
  APPLIED PHYSICS LETTERS/84(7)/pp.1079-1081, 2004-02
• Reduced defect densities in cubic GaN epilayers with AlGaN/GaN superlattice underlayers grown on (001) GaAs substrates by metalorganic vapor phase epitaxy
  Sugiyama M; Nosaka T; Suzuki T; Koida T; Nakajima K; Aoya...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/43(3)/pp.958-965, 2004-03
  
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• Defects introduced into SrTiO3 by auto-feeding epitaxy studied using positron annihilation technique
  Uedono A; Kiyohara M; Shimoyama K; Yamabe K; Ohdaira T; S...
  MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING/6(5-6)/pp.367-369, 2003-10
• Spin-dependent momentum density distribution and Fermi surface of Ho via 2D-ACAR measurements
  Hamid AS; Uedono A
  PHYSICA STATUS SOLIDI B-BASIC RESEARCH/241(4)/pp.856-863, 2004-03
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