UEDONO Akira
- Articles
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
UMEZAWA N.; SHIRAISHI K.; MIYAZAKI S.; UEDONO A.; AKASAKA...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2006(0)/pp.460-461, 2006-09 - Defects in Electroplated Cu and their Impact on Stress Migration Reliability
UEDONO A.; SUZUKI T.; NAKAMURA T.; OHDAIRA T.; SUZUKI R.
Extended abstracts of the ... Conference on Solid State Devices and Materials/2006(0)/pp.1022-1023, 2006-09 - Microstructural Characterization of Electroplated Copper Films on Copper-Alloy Seed Layer(Functional Interfaces for Analytical Chemistry)
廣瀬 幸範; 本田 和仁; 前川 和義; 宮崎 博史; 上殿 明良; 辻 幸一
Japan analyst/56(6)/pp.465-470, 2007-06 - 23pVE-10 Imaging of defect profiles with an positron probe micro analyzer
大島 永康; 鈴木 良一; 大平 俊行; 木野村 淳; 鳴海 貴允; 上殿 明良; 藤浪 真紀
Meeting abstracts of the Physical Society of Japan/63(2)/p.896, 2008-08 - 27aRE-7 Positron lifetimes in polymers measured with a positron probe micro analyzer
大島 永康; 鈴木 良一; 大平 俊行; 木野村 淳; 鳴海 貴允; 上殿 明良; 岡 壽崇; 藤浪 真紀
Meeting abstracts of the Physical Society of Japan/64(1)/p.934, 2009-03 - Detection of Point Defects in Nitride Semiconductors by Means of Positron Annihilation(Defects in Nitride Semiconductors)
上殿 明良; 石橋 章司; 大島 永康; 大平 俊行; 鈴木 良一
Journal of the Japanese Association of Crystal Growth/36(3)/pp.155-165, 2009-10 - Impacts of Point Defects on the Luminescence Properties of (Al,Ga) N Group-III Nitride Semiconductors(Defects in Nitride Semiconductors)
秩父 重英; 上殿 明良
Journal of the Japanese Association of Crystal Growth/36(3)/pp.166-177, 2009-10 - Exciton emission mechanism in AlN epitaxial films
尾沼 猛儀; 羽豆 耕治; 宗田 孝之; 上殿 明良; 秩父 重英
IEICE technical report. Component parts and materials/109(289)/pp.29-32, 2009-11 - Exciton emission mechanism in AlN epitaxial films
尾沼 猛儀; 羽豆 耕治; 宗田 孝之; 上殿 明良; 秩父 重英
IEICE technical report. Electron devices/109(288)/pp.29-32, 2009-11 - Exciton emission mechanism in AlN epitaxial films
尾沼 猛儀; 羽豆 耕治; 宗田 孝之; 上殿 明良; 秩父 重英
Technical report of IEICE. LQE/109(290)/pp.29-32, 2009-11 - Defects in Cu/low-k Interconnects Probed Using Monoenergetic Positron Beams
上殿 明良; 井上 尚也; 林 喜宏; 江口 和弘; 中村 友二; 廣瀬 幸範; 吉丸 正樹; 大島 永康; 大平...
Technical report of IEICE. SDM/109(412)/pp.49-52, 2010-01 - 20aHT-7 Evaluation of defects in deformed iron samples with a positron probe microanalyzer
大島 永康; 鈴木 良一; 大平 俊行; 木野村 淳; 窪田 翔二; 渡邉 宏理; 上殿 明良; 藤浪 真紀; 打...
Meeting abstracts of the Physical Society of Japan/65(1)/p.970, 2010-03 - Material characterization by means of positron annihilation
上殿 明良
應用物理/79(4)/pp.307-311, 2010-04 - Reversible photodissociation of hexacarbonyl tungsten in cross-linked polymers
Watanabe Akira; Watanabe Tomoko; Shan Yue Jin; Tezuka Ke...
BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN/79(11)/pp.1787-1792, 2006-11 - Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBE
Shimizu Yukiko; Miyashita Naoya; Mura Yusuke; Uedono Aki...
JOURNAL OF CRYSTAL GROWTH/301/pp.579-582, 2007-04 - Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
Chichibu S. F.; Uedono A.; Onuma T.; Haskell B. A.; Chakr...
PHILOSOPHICAL MAGAZINE/87(13)/pp.2019-2039, 2007-01 - Characterization of metal/high-k structures using monoenergetic positron beams
Uedono Akira; Naito Tatsuya; Otsuka Takashi; Ito Kenichi...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(5B)/pp.3214-3218, 2007-05 - Local bonding structure of high-stress silicon nitride film modified by UV curing for strained silicon technology beyond 45 nm node SoC devices
Miyagawa Yoshihiro; Murata Tatsunori; Nishida Yukio; Naka...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(4B)/pp.1984-1988, 2007-04 - Defects in electroplated cu and their impact on stress migration reliability studied using monoenergetic positron beams
Uedono Akira; Suzuki Takashi; Nakamura Tomoji; Ohdaira T...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(4B)/pp.1938-1941, 2007-04 - Guiding principle of energy level controllability of silicon dangling bonds in HfSiON
Umezawa Naoto; Shiraishi Kenji; Miyazaki Seiichi; Uedono ...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(4B)/pp.1891-1894, 2007-04 - Relation between AI vacancies and deep emission bands in AIN epitaxial films grown by NH3-source molecular beam epitaxy
Koyama T.; Sugawara M.; Hoshi T.; Uedono A.; Kaeding J. ...
APPLIED PHYSICS LETTERS/90(24)/pp.0-0, 2007-06 - Microstructural characterization of electroplated copper films on copper-alloy seed layer
Hirose Yukinori; Honda Kazuhito; Maekawa Kazuyoshi; Miyaz...
BUNSEKI KAGAKU/56(6)/pp.465-470, 2007-06 - Impact of residual impurities on annealing properties of vacancies in electroplated Cu studied using monoenergetic positron beams
Uedono Akira; Mori Kazuteru; Ito Kenichi; Imamizu Kentar...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/46(20-24)/pp.0-0, 2007-06 - Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams
Uedono A.; Inumiya S.; Matsuki T.; Aoyama T.; Nara Y.; Is...
JOURNAL OF APPLIED PHYSICS/102(5)/pp.0-0, 2007-09 - Annealing properties of open volumes in strained SiN films studied by monoenergetic positron beams
Uedono A.; Ito K.; Narumi T.; Sometani M.; Yamabe K.; Miy...
JOURNAL OF APPLIED PHYSICS/102(6)/pp.0-0, 2007-09 - more...
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON