UEDONO Akira
- Articles
- Structure-Modification Model of Porogen-Based Porous SiOC Film with Ultraviolet Curing
Oka Yoshihiro; Uedono Akira; Goto Kinya; Hirose Yukinori...
JAPANESE JOURNAL OF APPLIED PHYSICS/50(5:Part 2 Sp. Iss. SI)/pp.05EB06-05EB06-5, 2011-05 - Impact of Cu/III ratio on the near-surface defects in polycrystalline CuGaSe2 thin films
Islam M. M.; Uedono A.; Ishibashi S.; Tenjinbayashi K.; S...
APPLIED PHYSICS LETTERS/98(11)/pp.0-0, 2011-03 - Material Selection for the Metal Gate/High-k Transistors
AKASAKA Y.; MIYAGAWA K.; KARIYA A.; SHOJI H.; AOYAMA T.; ...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2004(0)/pp.196-197, 2004-09 - 26pYS-5Positronium emission from solid surface measured by time of flight method
栗原 俊一; 上殿 明良; 池田 光男; 榎本 収志; 大越 隆夫; 大澤 哲; 小川 雄二郎; 柿原 和久; 設...
Meeting abstracts of the Physical Society of Japan/60(1)/p.926, 2005-03 - Characterization of Open Spaces in High-κ Materials by Monoenergetic Positron Beams
上殿 明良; 後藤 正和; 樋口 恵一; 池内 恒平; ABUDUL Hamid Alaa Salah; 山部 ...
Journal of the Surface Science Society of Japan/26(5)/pp.268-273, 2005-05 - Characterization of Open Volumes in High-k Gate Dielectrics by Using Monoenergetic Positron Beams
上殿 明良; 大塚 崇; 伊東 健一; 白石 賢二; 山部 紀久夫; 宮崎 誠一; 梅澤 直人; 知京 豊裕; 大...
Technical report of IEICE. SDM/106(108)/pp.25-30, 2006-06 - Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
MIYAGAWA Yoshihiro; MURATA Tatsunori; NISHIDA Yukio; NAKA...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2006(0)/pp.158-159, 2006-09 - Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
INUMIYA Seiji; UEDONO Akira; MIYAZAKI Seiichi; OHTSUKA S...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2006(0)/pp.394-395, 2006-09 - Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
UMEZAWA N.; SHIRAISHI K.; MIYAZAKI S.; UEDONO A.; AKASAKA...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2006(0)/pp.460-461, 2006-09 - Defects in Electroplated Cu and their Impact on Stress Migration Reliability
UEDONO A.; SUZUKI T.; NAKAMURA T.; OHDAIRA T.; SUZUKI R.
Extended abstracts of the ... Conference on Solid State Devices and Materials/2006(0)/pp.1022-1023, 2006-09 - Microstructural Characterization of Electroplated Copper Films on Copper-Alloy Seed Layer(Functional Interfaces for Analytical Chemistry)
廣瀬 幸範; 本田 和仁; 前川 和義; 宮崎 博史; 上殿 明良; 辻 幸一
Japan analyst/56(6)/pp.465-470, 2007-06 - 23pVE-10 Imaging of defect profiles with an positron probe micro analyzer
大島 永康; 鈴木 良一; 大平 俊行; 木野村 淳; 鳴海 貴允; 上殿 明良; 藤浪 真紀
Meeting abstracts of the Physical Society of Japan/63(2)/p.896, 2008-08 - 27aRE-7 Positron lifetimes in polymers measured with a positron probe micro analyzer
大島 永康; 鈴木 良一; 大平 俊行; 木野村 淳; 鳴海 貴允; 上殿 明良; 岡 壽崇; 藤浪 真紀
Meeting abstracts of the Physical Society of Japan/64(1)/p.934, 2009-03 - Detection of Point Defects in Nitride Semiconductors by Means of Positron Annihilation(Defects in Nitride Semiconductors)
上殿 明良; 石橋 章司; 大島 永康; 大平 俊行; 鈴木 良一
Journal of the Japanese Association of Crystal Growth/36(3)/pp.155-165, 2009-10 - Impacts of Point Defects on the Luminescence Properties of (Al,Ga) N Group-III Nitride Semiconductors(Defects in Nitride Semiconductors)
秩父 重英; 上殿 明良
Journal of the Japanese Association of Crystal Growth/36(3)/pp.166-177, 2009-10 - Exciton emission mechanism in AlN epitaxial films
尾沼 猛儀; 羽豆 耕治; 宗田 孝之; 上殿 明良; 秩父 重英
IEICE technical report. Component parts and materials/109(289)/pp.29-32, 2009-11 - Exciton emission mechanism in AlN epitaxial films
尾沼 猛儀; 羽豆 耕治; 宗田 孝之; 上殿 明良; 秩父 重英
IEICE technical report. Electron devices/109(288)/pp.29-32, 2009-11 - Exciton emission mechanism in AlN epitaxial films
尾沼 猛儀; 羽豆 耕治; 宗田 孝之; 上殿 明良; 秩父 重英
Technical report of IEICE. LQE/109(290)/pp.29-32, 2009-11 - Defects in Cu/low-k Interconnects Probed Using Monoenergetic Positron Beams
上殿 明良; 井上 尚也; 林 喜宏; 江口 和弘; 中村 友二; 廣瀬 幸範; 吉丸 正樹; 大島 永康; 大平...
Technical report of IEICE. SDM/109(412)/pp.49-52, 2010-01 - 20aHT-7 Evaluation of defects in deformed iron samples with a positron probe microanalyzer
大島 永康; 鈴木 良一; 大平 俊行; 木野村 淳; 窪田 翔二; 渡邉 宏理; 上殿 明良; 藤浪 真紀; 打...
Meeting abstracts of the Physical Society of Japan/65(1)/p.970, 2010-03 - Material characterization by means of positron annihilation
上殿 明良
應用物理/79(4)/pp.307-311, 2010-04 - Reversible photodissociation of hexacarbonyl tungsten in cross-linked polymers
Watanabe Akira; Watanabe Tomoko; Shan Yue Jin; Tezuka Ke...
BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN/79(11)/pp.1787-1792, 2006-11 - Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBE
Shimizu Yukiko; Miyashita Naoya; Mura Yusuke; Uedono Aki...
JOURNAL OF CRYSTAL GROWTH/301/pp.579-582, 2007-04 - Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
Chichibu S. F.; Uedono A.; Onuma T.; Haskell B. A.; Chakr...
PHILOSOPHICAL MAGAZINE/87(13)/pp.2019-2039, 2007-01 - Characterization of metal/high-k structures using monoenergetic positron beams
Uedono Akira; Naito Tatsuya; Otsuka Takashi; Ito Kenichi...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(5B)/pp.3214-3218, 2007-05 - more...
- Structure-Modification Model of Porogen-Based Porous SiOC Film with Ultraviolet Curing