UEDONO Akira

Researcher's full information

Articles

• Local bonding structure of high-stress silicon nitride film modified by UV curing for strained silicon technology beyond 45 nm node SoC devices
  Miyagawa Yoshihiro; Murata Tatsunori; Nishida Yukio; Naka...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(4B)/pp.1984-1988, 2007-04
• Defects in electroplated cu and their impact on stress migration reliability studied using monoenergetic positron beams
  Uedono Akira; Suzuki Takashi; Nakamura Tomoji; Ohdaira T...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(4B)/pp.1938-1941, 2007-04
• Guiding principle of energy level controllability of silicon dangling bonds in HfSiON
  Umezawa Naoto; Shiraishi Kenji; Miyazaki Seiichi; Uedono ...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(4B)/pp.1891-1894, 2007-04
• Relation between AI vacancies and deep emission bands in AIN epitaxial films grown by NH3-source molecular beam epitaxy
  Koyama T.; Sugawara M.; Hoshi T.; Uedono A.; Kaeding J. ...
  APPLIED PHYSICS LETTERS/90(24)/pp.0-0, 2007-06
• Microstructural characterization of electroplated copper films on copper-alloy seed layer
  Hirose Yukinori; Honda Kazuhito; Maekawa Kazuyoshi; Miyaz...
  BUNSEKI KAGAKU/56(6)/pp.465-470, 2007-06
• Impact of residual impurities on annealing properties of vacancies in electroplated Cu studied using monoenergetic positron beams
  Uedono Akira; Mori Kazuteru; Ito Kenichi; Imamizu Kentar...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/46(20-24)/pp.0-0, 2007-06
• Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams
  Uedono A.; Inumiya S.; Matsuki T.; Aoyama T.; Nara Y.; Is...
  JOURNAL OF APPLIED PHYSICS/102(5)/pp.0-0, 2007-09
• Annealing properties of open volumes in strained SiN films studied by monoenergetic positron beams
  Uedono A.; Ito K.; Narumi T.; Sometani M.; Yamabe K.; Miy...
  JOURNAL OF APPLIED PHYSICS/102(6)/pp.0-0, 2007-09
• Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams
  Uedono A.; Ito K.; Nakamori H.; Mori K.; Nakano Y.; Kachi...
  JOURNAL OF APPLIED PHYSICS/102(8)/pp.0-0, 2007-10
• Impact of high temperature annealing on traps in physical-vapor-deposited-TiN/SiO2/Si analyzed by positron annihilation
  Matsuki Takeo; Watanabe Toshinari; Miura Takayoshi; Mise ...
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/46(45-49)/pp.0-0, 2007-12
• Annihilation characteristics of positrons in free-standing thin metal and polymer films
  Uedono A.; Ito K.; Nakamori H.; Ata S.; Ougizawa T.; Ito ...
  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS/266(5)/pp.750-754, 2008-03
• Brightness enhancement method for a high-intensity positron beam produced by an electron accelerator
  Oshima Nagayasu; Suzuki Ryoichi; Ohdaira Toshiyuki; Kinom...
  JOURNAL OF APPLIED PHYSICS/103(9)/pp.0-0, 2008-05
• Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam
  Uedono A.; Shaoqiang C.; Jongwon S.; Ito K.; Nakamori H....
  JOURNAL OF APPLIED PHYSICS/103(10)/pp.0-0, 2008-05
• Interlaboratory comparison of positron annihilation lifetime measurements for synthetic fused silica and polycarbonate
  Ito Kenji; Oka Toshitaka; Kobayashi Yoshinori; Shirai Ya...
  JOURNAL OF APPLIED PHYSICS/104(2)/pp.0-0, 2008-07
• Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy
  Onuma T.; Shibata T.; Kosaka K.; Asai K.; Sumiya S.; Tana...
  JOURNAL OF APPLIED PHYSICS/105(2)/pp.0-0, 2009-01
• Vacancy-type defects in Mg-doped InN probed by means of positron annihilation
  Uedono A.; Nakamori H.; Narita K.; Suzuki J.; Wang X.; Ch...
  JOURNAL OF APPLIED PHYSICS/105(5)/pp.0-0, 2009-03
• Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
  Uedono A.; Ishibashi S.; Keller S.; Moe C.; Cantu P.; Kat...
  JOURNAL OF APPLIED PHYSICS/105(5)/pp.0-0, 2009-03
• Behavior of oxygen vacancies in BiFeO3/SrRuO3/SrTiO3(100) and DyScO3(100) heterostructures
  Yuan G. L.; Uedono A.
  APPLIED PHYSICS LETTERS/94(13)/pp.0-0, 2009-03
• A study on vacancy-type defects in the electroless Cu measured with a monoenergetic positron beam
  Yamanaka Kimihiro; Uedono Akira
  SCRIPTA MATERIALIA/61(1)/pp.8-11, 2009-07
• Rapid three-dimensional imaging of defect distributions using a high-intensity positron microbeam
  Oshima N.; Suzuki R.; Ohdaira T.; Kinomura A.; Narumi T....
  APPLIED PHYSICS LETTERS/94(19)/pp.0-0, 2009-05
• Relationship between defects and optical properties in Er-doped GaN
  Chen Shaoqiang; Uedono Akira; Seo Jongwon; Sawahata Junj...
  JOURNAL OF CRYSTAL GROWTH/311(10)/pp.3097-3099, 2009-05
• Point defects in group-III nitride semiconductors studied by positron annihilation
  Uedono A.; Ishibashi S.; Ohdaira T.; Suzuki R.
  JOURNAL OF CRYSTAL GROWTH/311(10)/pp.3075-3079, 2009-05
• The dependence of oxygen vacancy distributions in BiFeO3 films on oxygen pressure and substrate
  Yuan G. L.; Martin L. W.; Ramesh R.; Uedono A.
  APPLIED PHYSICS LETTERS/95(1)/pp.0-0, 2009-07
• Thermal stability of semi-insulating property of Fe-doped GaN bulk films studied by photoluminescence and monoenergetic positron annihilation techniques
  Kubota Masashi; Onuma Takeyoshi; Ishihara Yujiro; Usui A...
  JOURNAL OF APPLIED PHYSICS/105(8)/pp.0-0, 2009-04
• A positron annihilation lifetime measurement system with an intense positron microbeam
  Oshima Nagayasu; Suzuki Ryoichi; Ohdaira Toshiyuki; Kinom...
  RADIATION PHYSICS AND CHEMISTRY/78(12)/pp.1096-1098, 2009-12
• more...