UEDONO Akira
- Articles
- Polarity Dependent Radiation Hardness of GaN
Matsuo Masayuki; Murayama Takayuki; Koike Kazuto; Sasa...
2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2015 - Vacancies in InxGa1−xN/GaN multiple quantum wells fabricated on m-plane GaN probed by a monoenergetic positron beam
Uedono Akira; Kurihara Kaori; Yoshihara Nakaaki; Nagao...
APPLIED PHYSICS EXPRESS/8(5)/p.51002, 2015-05 - Impact of Back Grind Damage on Si Wafer Thinning for 3D Integration
水島 賢子; 金 永ソク; 中村 友二; 杉江 隆一; 橋本 秀樹; 上殿 明良; 大場 隆之
Technical report of IEICE. SDM/113(451)/pp.13-18, 2014-02 - 28pAL-14 Development of an electrostatic acceleration system for the positron probe
大島 永康; 木村 彰吾; 渡邊 智仁; 上殿 明良; 伊藤 賢志; オローク ブライアン; 鈴木 良一
Meeting abstracts of the Physical Society of Japan/69(1)/p.930, 2014-03 - Development of a method for evaluating samples under humidity controlled air using slow positrons
大島 永康; Zhou Wei; 伊藤 賢志; Chen Zhe; O'Rourke Brian; 黒田...
Meeting abstracts of the Physical Society of Japan/67(1)/p.989, 2012-03 - 29aXZB-7 Development of a High Efficiency Pulsing System using Induction Buncher
金古 岳史; 林崎 規託; 大島 永康; 木野 村淳; O'Rourke Brian; 鈴木 良一; ...
Meeting abstracts of the Physical Society of Japan/68(1)/p.1049, 2013-03 - 29aXZB-8 The status of the new positron beamline at AIST
オローク ブライアン; 大島 永康; 木野 村淳; 小川 博嗣; 鈴木 良一; 筒井 拓朗; 木村 ...
Meeting abstracts of the Physical Society of Japan/68(1)/p.1049, 2013-03 - Vacancy-type defects in InxGa1-xN grown on GaN templates probed using monoenergetic positron beams
Uedono Akira; Watanabe Tomohito; Kimura Shogo; Zhang ...
JOURNAL OF APPLIED PHYSICS/114(18), 2013-11 - An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy in Hf-based High-k Gate Oxides
N. Umezawa; K. Shiraishi; Y. Akasaka; S. Inumiya; A. Ued...
Trans. Material Res. Soc. Jpn./31/p.129-132, 2006-01 - Extensive Studies for the Effect of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics
N. Umezawa; K. Shiraishi; H. Watanabe; K. Torii; Y. Akas...
ECS Transaction/2(1)/p.63-78, 2006-01 - The Positron Annihilation in GaAs Containing Defects
A. Uedono; Y. Iwase; S. Tanigawa
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 711-713./p.711-713, 1985-01 - Study of Grown-in Defects in InP by the Positron Labeling Technique and Variable Energy Positron Beam
Y. Iwase; A. Uedono; S. Tanigawa; H. Araki
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 753-755./p.753-755, 1985-01 - The Temperature Dependence of a Positron Trapping Effect in Glassy Metals
A. Uedono; Y. Iwase; S. Tanigawa
Positron Annihilation, edited by P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore 1985) p. 865-867./p.865-867., 1985-01 - Defects in Helium Implanted Metals Studied by Monoenergetic Positron Beam
Y. Iwase; A. Uedono; S. Tanigawa; H. Sakairi
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 868-870./p.868-870, 1985-01 - Precision Experiments on the Divacancy Effect in Dilute Al Alloys
S. Tanigawa; K. Ito; A. Morisue; A. Uedono; Y. Iwase; S. ...
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 886-888./p.886-888., 1985-01 - Application of the Variable Energy Positron Beam to the Study of Si/SiO2 Interface
Y. Iwase; A. Uedono; S. Tanigawa
Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 977-979./p.977-979., 1985-01 - 同時比較検出による陽電子消滅ドップラー拡がりの精密測定
岩瀬義倫; 上殿明良; 谷川庄一郎; 鈴木敬愛
Radioisotopes 34, 195-200 (1985)./34/p.195-200, 1985-01 - A Study of Agglomeration and Release Processes of Helium Implanted in Nickel by a Variable Energy Positron Beam
S. Tanigawa; Y. Iwase; A. Uedono; H. Sakairi
J. Nucl. Mater. 133&134, 463-467 (1985)./133&134/p.463-467, 1985-01 - Generation of Thermal Muonium in Vacuum
A.P. Mills; Jr.; J. Imazato; S. Saitoh; A. Uedono; Y. Kaw...
Phys. Rev. Lett. 56, 1463-1466 (1986)./56/p.1463-1466, 1986-01 - 単一エネルギー低速陽電子を用いた表面解析装置
上殿明良; 谷川庄一郎
Radioisotopes 37, 217-220 (1988)./37/p.217-220, 1988-01 - 単色陽電子線を用いたイオン注入に伴う格子欠陥分布の検出
上殿明良; 谷川庄一郎
Ionics 153, 1-11 (1988)./153/p.1-11, 1988-01 - Defect Creation Caused by Ion Implantation and Activation Behavior by Rapid Thermal Annealing on Semiconducting Materials
J.-L. Lee; K.-H. Shin; J.S. Kim; H.M. Park; D.S. Ma; S. ...
J. Korean Int. of Telematic and Electronics 25, 1447-1457 (1988)./25/p.1447-1457, 1988-01 - Defect Characterization of Si+-Implanted GaAs by Monoenergetic Positron Beam Technique
J.-L. Lee; K.-H. Shin; S. Tanigawa; A. Uedono; J.S. Kim; ...
J. de Phys. Colloque C4, 457-460 (1988)./p.457-460, 1988-01 - Depth Profiles of Ion-Implantation Induced Vacancy-Type Defects in GaAs and Si Observed by Slow Positron
J.-L. Lee; J.S. Kim; H.M. Park; D.S. Ma; S. Tanigawa; A. ...
Appl. Phys. Lett. 53, 1302-1304 (1988)./53/p.1302-1304, 1988-01 - Detection of Helium Implanted into Nickel by Slow Positrons
A. Uedono; S. Tanigawa; H. Sakairi
Phys. Lett. A. 129, 249-252 (1988)./129/p.249-252, 1988-01 - more...
- Polarity Dependent Radiation Hardness of GaN